Samsung K6T4008U1C-TB10, K6T4008U1C-MF85, K6T4008U1C-MB85, K6T4008U1C-MB70, K6T4008U1C-MB10 Datasheet

K6T4008V1C, K6T4008U1C Family	CMOS SRAM

Document Title

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History		Draft Data	Remark
0.0	Initial Draft	January 13, 1998	Advance
0.1	Revisied	June 12, 1998	Preliminary
	- Speed bin change
	KM68U4000C : 85/100ns → 70/85/100ns
	- DC Characteristics change
	ICC : 5mA at read/write → 4mA at read
	ICC1 : 3mA → 4mA
	ICC2 : 35mA → 30mA
	ISB : 0.5mA → 0.3mA
	ISB1 : 10μA → 15μA for commercial parts
	- Add 32-TSOP1-0820
0.11	Errata correct	November 7, 1998
	- 32-TSOP1-0813 products: T → TG
1.0	Finalize	January 15, 1999	Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

1	Revision 1.0
	January 1999

K6T4008V1C, K6T4008U1C Family	CMOS SRAM

512K×8 bit Low Power and Low Voltage CMOS Static RAM

FEATURES

∙Process Technology: TFT

∙Organization: 512K×8

∙Power Supply Voltage K6T4008V1C Family: 3.0~3.6V K6T4008U1C Family: 2.7~3.3V

∙Low Data Retention Voltage: 2V(Min)

∙Three state output and TTL Compatible

∙Package Type: 32-SOP-525, 32-TSOP2-400F/R

32-TSOP1-0820F, 32-TSOP1-0813.4F

GENERAL DESCRIPTION

The K6T4008V1C and K6T4008U1C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

PRODUCT FAMILY

					Power Dissipation
	Product Family	Operating Temperature	Vcc Range	Speed			PKG Type
					Standby	Operating
					(ISB1, Max)	(ICC2, Max)
	K6T4008V1C-B	Commercial(0~70°C)	3.0~3.6V	701)/85ns	15μA		32-SOP
	K6T4008U1C-B		2.7~3.3V	701)/85/100ns
						30mA	32-TSOP2-F/R
							32-TSOP1-F
	K6T4008V1C-F	Industrial(-40~85°C)	3.0~3.6V	701)/85ns	20μA
							32-sTSOP1-F
	K6T4008U1C-F		2.7~3.3V	701)/85/100ns

1. The paramerter is measured with 30pF test load.

PIN DESCRIPTION

A18		1						32			VCC				VCC				32							1		A18
A16		2						31			A15				A15				31							2		A16
A14		3						30		A17					A17				30							3		A14
A12		4						29											29
											WE				WE											4		A12
A7		5						28			A13				A13				28							5		A7
A6		6						27			A8				A8				27							6		A6
A5		7		32-SOP				26			A9				A9				26		32-TSOP2					7		A5
A4		8						25			A11				A11				25							8		A4
				32-TSOP2																	(Reverse)
								24											24
A3		9		(Forward)							OE				OE											9		A3
A2		10						23			A10				A10				23							10		A2
								22											22
A1		11									CS				CS											11		A1
A0		12						21			I/O8			I/O8					21							12		A0
I/O1		13						20			I/O7			I/O7					20							13		I/O1
I/O2		14						19			I/O6			I/O6					19							14		I/O2
I/O3		15						18			I/O5			I/O5					18							15		I/O3
VSS		16						17			I/O4			I/O4					17							16		VSS
A11
		1																	32		OE
A9		2																	31		A10
A8		3																	30
																					CS
A13		4																	29		I/O8
WE		5																	28		I/O7
A17		6																	27		I/O6
A15		7					32-TSOP1												26		I/O5
VCC		8																	25		I/O4
A18		9					32-STSOP1												24		VSS
A16		10						(Forward)											23		I/O3
A14		11																	22		I/O2
A12		12																	21		I/O1
A7		13																	20		A0
A6		14																	19		A1
A5		15																	18		A2
A4		16																	17		A3
Name				Function											Name						Function
A0~A18				Address Inputs												Vcc					Power
	WE			Write Enable Input												Vss					Ground
	CS			Chip Select Input										I/O1~I/O8							Data Inputs/Outputs
	OE			Output Enable Input

FUNCTIONAL BLOCK DIAGRAM

		Clk gen.	Precharge circuit.
	A0
	A1
	A4
	A5	Row	Memory array
	A6		1024 rows
		select
	A7		512×8 columns
	A12
	A14
	A16
	A18
I/O1		Data	I/O Circuit
I/O8		cont	Column select
		Data
		cont
			A2 A3 A8 A9 A10 A11 A13 A15 A17
CS	Control
WE	logic
OE

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2	Revision 1.0
	January 1999

K6T4008V1C, K6T4008U1C Family			CMOS SRAM
PRODUCT LIST
Commercial Temp Products(0~70°C)		Industrial Temp Products(-40~85°C)
Part Name	Function	Part Name	Function
K6T4008V1C-GB70	32-SOP, 70ns, 3.3V, LL	K6T4008V1C-GF70	32-SOP, 70ns, 3.3V, LL
K6T4008V1C-GB85	32-SOP, 85ns, 3.3V, LL	K6T4008V1C-GF85	32-SOP, 85ns, 3.3V, LL
K6T4008V1C-VB70	32-TSOP2-F, 70ns, 3.3V, LL	K6T4008V1C-VF70	32-TSOP2-F, 70ns, 3.3V, LL
K6T4008V1C-VB85	32-TSOP2-F, 85ns, 3.3V, LL	K6T4008V1C-VF85	32-TSOP2-F, 85ns, 3.3V, LL
K6T4008V1C-MB70	32-TSOP2-R, 70ns, 3.3V, LL	K6T4008V1C-MF70	32-TSOP2-R, 70ns, 3.3V, LL
K6T4008V1C-MB85	32-TSOP2-R, 85ns, 3.3V, LL	K6T4008V1C-MF85	32-TSOP2-R, 85ns, 3.3V, LL
K6T4008V1C-TB70	32-TSOP1-F, 70ns, 3.3V, LL	K6T4008V1C-TF70	32-TSOP1-F, 70ns, 3.3V, LL
K6T4008V1C-TB85	32-TSOP1-F, 85ns, 3.3V, LL	K6T4008V1C-TF85	32-TSOP1-F, 85ns, 3.3V, LL
K6T4008V1C-YB70	32-sTSOP1-F, 70ns, 3.3V, LL	K6T4008V1C-YF70	32-sTSOP1-F, 70ns, 3.3V, LL
K6T4008V1C-YB85	32-sTSOP1-F, 85ns, 3.3V, LL	K6T4008V1C-YF85	32-sTSOP1-F, 85ns, 3.3V, LL
K6T4008U1C-GB70	32-SOP, 70ns, 3.0V, LL	K6T4008U1C-GF70	32-SOP, 70ns, 3.0V, LL
K6T4008U1C-GB85	32-SOP, 85ns, 3.0V, LL	K6T4008U1C-GF85	32-SOP, 85ns, 3.0V, LL
K6T4008U1C-GB10	32-SOP, 100ns, 3.0V, LL	K6T4008U1C-GF10	32-SOP, 100ns, 3.0V, LL
K6T4008U1C-VB70	32-TSOP2-F, 70ns, 3.0V, LL	K6T4008U1C-VF70	32-TSOP2-F, 70ns, 3.0V, LL
K6T4008U1C-VB85	32-TSOP2-F, 85ns, 3.0V, LL	K6T4008U1C-VF85	32-TSOP2-F, 85ns, 3.0V, LL
K6T4008U1C-VB10	32-TSOP2-F, 100ns, 3.0V, LL	K6T4008U1C-VF10	32-TSOP2-F, 100ns, 3.0V, LL
K6T4008U1C-MB70	32-TSOP2-R, 70ns, 3.0V, LL	K6T4008U1C-MF70	32-TSOP2-R, 70ns, 3.0V, LL
K6T4008U1C-MB85	32-TSOP2-R, 85ns, 3.0V, LL	K6T4008U1C-MF85	32-TSOP2-R, 85ns, 3.0V, LL
K6T4008U1C-MB10	32-TSOP2-R, 100ns, 3.0V, LL	K6T4008U1C-MF10	32-TSOP2-R, 100ns, 3.0V, LL
K6T4008U1C-TB70	32-TSOP1-F, 70ns, 3.0V, LL	K6T4008U1C-TF70	32-TSOP1-F, 70ns, 3.0V, LL
K6T4008U1C-TB85	32-TSOP1-F, 85ns, 3.0V, LL	K6T4008U1C-TF85	32-TSOP1-F, 85ns, 3.0V, LL
K6T4008U1C-TB10	32-TSOP1-F, 100ns, 3.0V, LL	K6T4008U1C-TF10	32-TSOP1-F, 100ns, 3.0V, LL
K6T4008U1C-YB70	32-sTSOP1-F, 70ns, 3.0V, LL	K6T4008U1C-YF70	32-sTSOP1-F, 70ns, 3.0V, LL
K6T4008U1C-YB85	32-sTSOP1-F, 85ns, 3.0V, LL	K6T4008U1C-YF85	32-sTSOP1-F, 85ns, 3.0V, LL
K6T4008U1C-YB10	32-sTSOP1-F, 100ns, 3.0V, LL	K6T4008U1C-YF10	32-sTSOP1-F, 100ns, 3.0V, LL

FUNCTIONAL DESCRIPTION

CS	OE	WE	I/O	Mode	Power
H	X1)	X1)	High-Z	Deselected	Standby
L	H	H	High-Z	Output Disabled	Active
L	L	H	Dout	Read	Active
L	X1)	L	Din	Write	Active

1. X means don′t care (Must be in low or high state)

ABSOLUTE MAXIMUM RATINGS1)

	Item	Symbol	Ratings	Unit	Remark
	Voltage on any pin relative to Vss	VIN,VOUT	-0.5 to VCC+0.5	V	-
	Voltage on Vcc supply relative to Vss	VCC	-0.3 to 4.6	V	-
	Power Dissipation	PD	1.0	W	-
	Storage temperature	TSTG	-65 to 150	°C	-
	Operating Temperature	TA	0 to 70	°C	K6T4008V1C-L, K6T4008U1C-L
			-40 to 85	°C	K6T4008V1C-P, K6T4008U1C-P

1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

3	Revision 1.0
	January 1999