Samsung KM684000ALTI-7L, KM684000ALT-5L, KM684000ALR-5L, KM684000ALP-7L, KM684000ALP-7 Datasheet

K6T1008C2E Family	CMOS SRAM

Document Title

128Kx8 bit Low Power CMOS Static RAM

Revision History

Revision No.	History	Draft Data	Remark
0.0	Design target	October 12, 1998	Preliminary
1.0	Finalize	August 30, 1999	Final
	- Improve tWP form 55ns to 50ns for 70ns product.
	- Remove 55ns speed bin from industrial product.
1.01	Errata correction	December 1, 1999
2.0	Revise	February 14, 2000	Final
3.0	Revise	March 3, 2000	Final
	- Add 55ns parts to industrial products.

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.

1	Revision 3.0
	March 2000

K6T1008C2E Family	CMOS SRAM

128Kx8 bit Low Power CMOS Static RAM

FEATURES

∙Process Technology: TFT

∙Organization: 128Kx8

∙Power Supply Voltage: 4.5~5.5V

∙Low Data Retention Voltage: 2V(Min)

∙Three state output and TTL Compatible

∙Package Type: 32-DIP-600, 32-SOP-525,

32-TSOP1-0820F/R

GENERAL DESCRIPTION

The K6T1008C2E families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

PRODUCT FAMILY

					Power Dissipation
	Product Family	Operating Temperature	Vcc Range	Speed	Standby	Operating	PKG Type
					(ISB1, Max)	(ICC2, Max)
	K6T1008C2E-L	Commercial(0~70°C)			50μA		32-DIP-600, 32-SOP-525
							32-TSOP1-0820F/R
	K6T1008C2E-B				10μA
			4.5~5.5V	551)/70ns		50mA
	K6T1008C2E-P	Industrial(-40~85°C)			50μA		32-SOP -525
							32-TSOP1-0820F/R
	K6T1008C2E-F				15μA
	1. The parameters are tested with 50pF test load
	PIN DESCRIPTION			FUNCTIONAL BLOCK DIAGRAM

																	A11	1		32
																						OE
																	A9	2		31		A10
																	A8	3		30		CS1
																	A13	4		29		I/O8
N.C			1								32		VCC				WE	5		28		I/O7
																	CS2	6		27		I/O6
A16			2								31		A15				A15	7	32-TSOP	26		I/O5
A14			3								30		CS2				VCC	8		25		I/O4
																	NC	9	Type1-Forward	24		VSS
A12			4								29		WE				A16	10		23		I/O3
											28		A13				A14	11		22		I/O2
	A7		5														A12	12		21		I/O1
	A6		6 32-SOP								27		A8				A7	13		20		A0
																	A6	14		19		A1
	A5		7	32-DIP							26		A9				A5	15		18		A2
	A4		8								25		A11				A4	16		17		A3
											24
	A3		9										OE				A4	16		17		A3
	A2		10								23		A10
																	A5	15		18		A2
	A1		11								22		CS1				A6	14		19		A1
																	A7	13		20		A0
											21
	A0		12										I/O8				A12	12		21		I/O1
I/O1			13								20		I/O7				A14	11		22		I/O2
																	A16	10	32-TSOP	23		I/O3
I/O2			14								19		I/O6				NC	9		24		VSS
			15								18		I/O5				VCC	8	Type1-Reverse	25		I/O4
I/O3																	A15	7		26		I/O5
VSS			16								17		I/O4				CS2	6		27		I/O6
																	WE	5		28		I/O7
																	A13	4		29		I/O8
																	A8	3		30		CS1
																	A9	2		31		A10
																	A11	1		32		OE
				Name															Function
				CS1, CS2										Chip Select Input
					OE									Output Enable Input
				WE										Write Enable Input
				I/O1~I/O8										Data Inputs/Outputs
				A0~A16										Address Inputs
				Vcc										Power
				Vss										Ground
				N.C.										No Connection

		Clk gen.	Precharge circuit.
	Raw	Row	Memory array
			1024 rows
	Address	select
			128×8 columns
	I/O1	Data	I/O Circuit
	I/O8	cont	Column select
		Data
		cont
			Column Address
CS1
CS2	Control
WE	logic
OE

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2	Revision 3.0
	March 2000

K6T1008C2E Family			CMOS SRAM
PRODUCT LIST
Commercial Temperature Products(0~70°C)		Industrial Temperature Products(-40~85°C)
Part Name	Function	Part Name	Function
K6T1008C2E-DL55	32-DIP, 55ns, Low Power	K6T1008C2E-GP55	32-SOP, 55ns, Low Power
K6T1008C2E-DL70	32-DIP, 70ns, Low Power	K6T1008C2E-GP70	32-SOP, 70ns, Low Power
K6T1008C2E-DB55	32-DIP, 55ns, Low Low Power	K6T1008C2E-GF55	32-SOP, 55ns, Low Low Power
K6T1008C2E-DB70	32-DIP, 70ns, Low Low Power	K6T1008C2E-GF70	32-SOP, 70ns, Low Low Power
K6T1008C2E-GL55	32-SOP, 55ns, Low Power	K6T1008C2E-TF55	32-TSOP F, 55ns, Low Low Power
K6T1008C2E-GL70	32-SOP, 70ns, Low Power	K6T1008C2E-TF70	32-TSOP F, 70ns, Low Low Power
K6T1008C2E-GB55	32-SOP, 55ns, Low Low Power	K6T1008C2E-RF55	32-TSOP R, 55ns, Low Low Power
K6T1008C2E-GB70	32-SOP, 70ns, Low Low Power	K6T1008C2E-RF70	32-TSOP R, 70ns, Low Low Power
K6T1008C2E-TB55	32-TSOP F, 55ns, Low Low Power
K6T1008C2E-TB70	32-TSOP F, 70ns, Low Low Power
K6T1008C2E-RB55	32-TSOP R, 55ns, Low Low Power
K6T1008C2E-RB70	32-TSOP R, 70ns, Low Low Power

FUNCTIONAL DESCRIPTION

CS1

CS2

OE

WE

I/O

Mode

Power

H

X1)

X1)

X1)

High-Z

Deselected

Standby

X1)

L

X1)

X1)

High-Z

Deselected

Standby

L

H

H

H

High-Z

Output Disabled

Active

L

H

L

H

Dout

Read

Active

L

H

X1)

L

Din

Write

Active

1. X means don′t care (Must be in high or low states)

ABSOLUTE MAXIMUM RATINGS1)

	Item	Symbol	Ratings		Unit	Remark
	Voltage on any pin relative to Vss	VIN,VOUT	-0.5 to	7.0	V	-
	Voltage on Vcc supply relative to Vss	VCC	-0.5 to	7.0	V	-
	Power Dissipation	PD	1.0		W	-
	Storage temperature	TSTG	-65 to 150		°C	-
	Operating Temperature	TA	0 to 70		°C	K6T1008C2E-L/-B
			-40 to	85	°C	K6T1008C2E-P/-F

1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

3	Revision 3.0
	March 2000