Samsung KM68257ETGI-15, KM68257ETGI-12, KM68257ETGI-10, KM68257ETG-15, KM68257ETG-10 Datasheet

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KM68257E, KM68257EI

PRELIMINARY

CMOS SRAM

 

 

Document Title

32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

History

Draft Data

Remark

Rev. 0.0

Initial Draft

Aug. 1. 1998

Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

Revision 0.0

August 1998

Samsung KM68257ETGI-15, KM68257ETGI-12, KM68257ETGI-10, KM68257ETG-15, KM68257ETG-10 Datasheet

KM68257E, KM68257EI

PRELIMINARY

CMOS SRAM

 

 

32K x 8 Bit High-Speed CMOS Static RAM

 

FEATURES

Fast Access Time 10, 12, 15ns(Max.)

Low Power Dissipation

Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.)

Operating KM68257E - 10 : 80mA(Max.) KM68257E - 12 : 80mA(Max.) KM68257E - 15 : 80mA(Max.)

Single 5.0V±10% Power Supply

TTL Compatible Inputs and Outputs

I/O Compatible with 3.3V Device

Fully Static Operation

-No Clock or Refresh required

Three State Outputs

Standard Pin Configuration

KM68257EJ : 28-SOJ-300

KM68257ETG : 28-TSOP1-0813. 4F

ORDERING INFORMATION

KM68257E -10/12/15

Commercial Temp.

KM68257EI -10/12/15

Industrial Temp.

FUNCTIONAL BLOCK DIAGRAM

A0

 

 

 

Clk Gen.

 

Pre-Charge-Circuit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A1

 

 

 

 

 

 

 

 

 

 

 

A2

 

 

 

 

 

 

Select

 

Memory Array

A3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A4

 

 

 

 

 

 

Row

 

512 Rows

A5

 

 

 

 

 

 

 

64x8 Columns

A6

 

 

 

 

 

 

 

 

 

 

 

A7

 

 

 

 

 

 

A8

 

 

 

 

 

 

I/O1~I/O8

Data

 

I/O Circuit

 

 

Cont.

Column Select

 

 

 

 

CLK

 

 

 

 

 

 

Gen.

 

 

 

 

 

 

A9

A10

A11

A12

A13

A14

CS

 

 

 

 

 

 

WE

 

 

 

 

 

 

OE

 

 

 

 

 

 

GENERAL DESCRIPTION

The KM68257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM68257E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.

PIN CONFIGURATION(Top View)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

1

 

 

28

 

 

 

A10

 

 

 

 

 

 

 

 

A11

 

2

 

 

27

 

 

 

CS

 

 

 

 

 

 

 

A9

 

3

 

 

26

 

 

 

I/O8

 

 

 

 

 

 

 

A8

 

4

 

 

25

 

 

 

I/O7

 

 

 

 

 

 

 

A13

 

 

5

 

 

24

 

 

 

I/O6

 

 

 

 

 

 

WE

 

6

 

 

23

 

 

 

I/O5

 

 

 

 

 

 

Vcc

 

7

 

TSOP1

22

 

 

 

I/O4

 

 

 

 

 

 

A14

 

8

 

 

21

 

 

 

Vss

 

A12

 

9

 

 

20

 

 

 

I/O3

 

 

 

 

 

 

 

A7

 

10

 

 

19

 

 

 

I/O2

 

 

 

 

 

 

 

A6

 

11

 

 

18

 

 

 

I/O1

 

 

 

 

 

 

 

A5

 

12

 

 

17

 

 

 

A0

 

 

 

 

 

 

 

A4

 

13

 

 

16

 

 

 

A1

 

 

 

 

 

 

 

A3

 

14

 

 

15

 

 

 

A2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A14

1

 

28

Vcc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A12

2

 

27

WE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A7

3

 

26

A13

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A6

4

 

25

A8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A5

5

 

24

A9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A4

6

 

23

A11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A3

7

SOJ

22

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A2

8

 

21

A10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A1

9

 

20

CS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A0

10

 

19

I/O8

 

 

 

 

 

I/O1

 

 

18

I/O7

 

 

 

 

 

11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O2

12

 

17

I/O6

 

 

 

 

 

I/O3

 

 

16

I/O5

 

 

 

 

 

13

 

 

 

 

 

 

Vss

 

 

15

I/O4

 

 

 

 

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN FUNCTION

Pin Name

Pin Function

 

 

A0 - A14

Address Inputs

 

 

 

 

 

 

WE

Write Enable

 

 

 

 

 

 

 

 

 

 

CS

Chip Select

 

 

 

 

 

 

 

 

 

OE

Output Enable

I/O1 ~ I/O8

Data Inputs/Outputs

 

 

VCC

Power(+5.0V)

VSS

Ground

- 2 -

Revision 0.0

August 1998

KM68257E, KM68257EI

 

 

PRELIMINARY

 

 

 

CMOS SRAM

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS*

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Rating

 

Unit

 

 

 

 

 

 

 

 

 

Voltage on Any Pin Relative to VSS

VIN, VOUT

-0.5 to 7.0

 

V

 

 

 

 

 

 

 

 

 

Voltage on VCC Supply Relative to VSS

VCC

-0.5 to 7.0

 

V

 

 

 

 

 

 

 

 

 

Power Dissipation

PD

1.0

 

W

 

 

 

 

 

 

 

 

 

Storage Temperature

TSTG

-65 to 150

 

°C

 

 

 

 

 

 

 

 

 

Operating Temperature

Commercial

TA

0 to 70

 

°C

 

 

 

 

 

 

 

 

 

 

 

Industrial

TA

-40 to 85

 

°C

 

 

 

 

 

 

 

 

 

*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)

Parameter

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

Supply Voltage

VCC

4.5

5.0

5.5

V

 

 

 

 

 

 

Ground

VSS

0

0

0

V

 

 

 

 

 

 

Input High Voltage

VIH

2.2

-

VCC+0.5**

V

 

 

 

 

 

 

Input Low Voltage

VIL

-0.5*

-

0.8

V

 

 

 

 

 

 

NOTE: The above parameters are also guaranteed at industrial temperature range.

*VIL(Min) = -2.0(Pulse Width7ns) for I20mA

**VIH(Max) = VCC+2.0V(Pulse Width7ns) for I20mA

DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C,VCC=5.0V±10% unless otherwise specified)

Parameter

Symbol

 

 

 

 

 

 

 

Test Conditions

 

Min

Max

Unit

 

 

 

 

 

 

 

 

Input Leakage Current

ILI

 

VIN = VSS to VCC

 

-1

1

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

mA

Output Leakage Current

ILO

 

CS=VIH or OE=VIH or WE=VIL

 

-1

1

 

 

 

VOUT = VSS to VCC

 

 

 

 

 

 

 

 

 

 

 

 

Operating Current

ICC

 

Min. Cycle, 100% Duty

10ns

-

80

mA

 

 

 

CS=VIL, VIN = VIH or VIL,

 

 

 

 

 

 

 

12ns

-

80

 

 

 

 

IOUT=0mA

 

 

 

 

 

 

 

 

 

 

 

15ns

-

80

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Standby Current

ISB

 

Min. Cycle, CS=VIH

 

-

20

mA

 

 

 

 

 

 

 

 

 

 

 

f=0MHz,

 

 

 

³VCC-0.2V,

 

 

 

 

 

ISB1

 

CS

 

-

2

mA

 

 

 

VIN³VCC-0.2V or VIN£0.2V

 

 

 

 

 

 

 

 

 

 

 

 

Output Low Voltage Level

VOL

 

IOL=8mA

 

-

0.4

V

 

 

 

 

 

 

 

 

Output High Voltage Level

VOH

 

IOH=-4mA

 

2.4

-

V

 

 

 

 

 

 

 

 

 

VOH1*

 

IOH1=0.1mA

 

-

3.95

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTE: The above parameters are also guaranteed at industrial temperature range. * VCC=5.0V, Temp.=25°C

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item

Symbol

Test Conditions

MIN

Max

Unit

 

 

 

 

 

 

Input/Output Capacitance

CI/O

VI/O=0V

-

8

pF

 

 

 

 

 

 

Input Capacitance

CIN

VIN=0V

-

7

pF

 

 

 

 

 

 

* NOTE : Capacitance is sampled and not 100% tested.

- 3 -

Revision 0.0

August 1998

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