Samsung K6T4008C1C-GL70, K6T4008C1C-GL55, K6T4008C1C-GF70, K6T4008C1C-GF55, K6T4008C1C-GB70 Datasheet

K6T4008C1C Family	CMOS SRAM

Document Title

512Kx8 bit Low Power CMOS Static RAM

Revision History

Revision No.	History	Draft Date	Remark
0.0	Initial draft	October 20,1998	Preliminary
1.0	Finalize	April 12, 1999	Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

1	Revision 1.0

April 1999

K6T4008C1C Family	CMOS SRAM

512Kx8 bit Low Power CMOS Static RAM

FEATURES

∙Process Technology: TFT

∙Organization: 512Kx8

∙Power Supply Voltage: 4.5~5.5V

∙Low Data Retention Voltage: 2V(Min)

∙Three state output and TTL Compatible

∙Package Type: 32-DIP-600, 32-SOP-525,

32-TSOP2-400F/R

GENERAL DESCRIPTION

The K6T4008C1C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current.

PRODUCT FAMILY

					Power Dissipation
	Product Family	Operating Temperature	Vcc Range	Speed	Standby	Operating	PKG Type
					(ISB1, Max)	(ICC2, Max)
	K6T4008C1C-L	Commercial (0~70°C)			80μA		32-DIP,32-SOP
							32-TSOP2-F/R
	K6T4008C1C-B				20μA
			4.5~5.5V	551)/70ns		55mA
	K6T4008C1C-P	Inderstrial (-40~85°C)			100μA		32-SOP
							32-TSOP2-F/R
	K6T4008C1C-F				30μA

1. The parameter is measured with 50pF test load.

PIN DESCRIPTION

A18	1							32			VCC					VCC			32				1		A18
A16	2							31			A15					A15			31				2		A16
A14	3							30		A17						A17			30				3		A14
A12	4							29			WE					WE			29				4		A12
A7	5							28			A13					A13			28				5		A7
A6	6	32-DIP						27			A8					A8			27				6		A6
A5	7							26			A9					A9			26	32-TSOP2			7		A5
		32-SOP
A4											A11					A11
	8	32-TSOP2						25											25	(Reverse)			8		A4
A3	9	(Forward)						24			OE					OE			24				9		A3
A2	10							23			A10					A10			23				10		A2
A1	11							22			CS				CS				22				11		A1
A0	12							21			I/O8				I/O8				21				12		A0
I/O1	13							20			I/O7				I/O7				20				13		I/O1
I/O2	14							19			I/O6				I/O6				19				14		I/O2
I/O3	15							18			I/O5				I/O5				18				15		I/O3
VSS	16							17			I/O4				I/O4				17				16		VSS
		Pin Name																	Function
			WE								Write Enable Input
			CS								Chip Select Input
			OE								Output Enable Input
		A0~A18									Address Inputs
		I/O1~I/O8									Data Inputs/Outputs
		Vcc									Power
		Vss									Ground

FUNCTIONAL BLOCK DIAGRAM

	Clk gen.	Precharge circuit.
	Row	Memory array
		1024 rows
	select
		512×8 columns
I/O1	Data	I/O Circuit
I/O8	cont	Column select
	Data
	cont
CS
WE	Control
	logic
OE

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2	Revision 1.0

April 1999

	K6T4008C1C Family			CMOS SRAM
	PRODUCT LIST
	Commercial Temperature Products(0~70°C)		Industrial Temperature Products(-40~85°C)
	Part Name	Function	Part Name	Function
	K6T4008C1C-DL55	32-DIP, 55ns, Low Power	K6T4008C1C-GP55	32-SOP, 55ns, Low Power
	K6T4008C1C-DB55	32-DIP, 55ns, Low Low Power	K6T4008C1C-GF55	32-SOP, 55ns, Low Low Power
	K6T4008C1C-DL70	32-DIP, 70ns, Low Power	K6T4008C1C-GP70	32-SOP, 70ns, Low Power
	K6T4008C1C-DB70	32-DIP, 70ns, Low Low Power	K6T4008C1C-GF70	32-SOP, 70ns, Low Low Power
	K6T4008C1C-GL55	32-SOP, 55ns, Low Power	K6T4008C1C-VF55	32-TSOP2-F, 55ns, Low Low Power
	K6T4008C1C-GB55	32-SOP, 55ns, Low Low Power	K6T4008C1C-VF70	32-TSOP2-F, 70ns, Low Low Power
	K6T4008C1C-GL70	32-SOP, 70ns, Low Power	K6T4008C1C-MF55	32-TSOP2-R, 55ns, Low Low Power
	K6T4008C1C-GB70	32-SOP, 70ns, Low Low Power	K6T4008C1C-MF70	32-TSOP2-R, 70ns, Low Low Power
	K6T4008C1C-VB55	32-TSOP2-F, 55ns, Low Low Power
	K6T4008C1C-VB70	32-TSOP2-F, 70ns, Low Low Power
	K6T4008C1C-MB55	32-TSOP2-R, 55ns, Low Low Power
	K6T4008C1C-MB70	32-TSOP2-R, 70ns, Low Low Power

FUNCTIONAL DESCRIPTION

	CS			OE			WE		I/O Pin	Mode	Power
	H			X1)			X1)		High-Z	Deselected	Standby
	L			H			H		High-Z	Output disbaled	Active
	L			L			H		Dout	Read	Active
	L			X1)			L		Din	Write	Active

1. X means don′t care.( Must be in low or high state.)

ABSOLUTE MAXIMUM RATINGS1)

	Item	Symbol	Ratings	Unit	Remark
	Voltage on any pin relative to Vss	VIN,VOUT	-0.5 to 7.0	V	-
	Voltage on Vcc supply relative to Vss	VCC	-0.5 to 7.0	V	-
	Power Dissipation	PD	1.0	W	-
	Storage temperature	TSTG	-65 to 150	°C	-
	Operating Temperature	TA	0 to 70	°C	K6T4008C1C-L/-B
			-40 to 85	°C	K6T4008C1C-P/-F

1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

3	Revision 1.0

April 1999