Samsung K6T4008C1B-GP55, K6T4008C1B-GL70, K6T4008C1B-GF55, K6T4008C1B-GB70, K6T4008C1B-GB55 Datasheet

K6T4008C1B Family	CMOS SRAM

Document Title

512Kx8 bit Low Power CMOS Static RAM

Revision History

Revision No.	History	Draft Date	Remark
0.0	Initial Draft	December 7, 1996	Advance
0.1	Revise	March 6, 1997	Preliminary
	- Changed Operating current by reticle revision
	ICC at write : 35mA → 45mA
	ICC1 at read/write : 15/35mA → 10/45mA
1.0	Finalize	October 9, 1997	Final
	- Changed Operating current
	ICC1 at write : 45mA → 40mA
	ICC2; 90mA → 80mA
	- Change test load at 55ns : 100pF → 50pF
2.0	Revise	February 17, 1998	Final
	- Change datasheet format
3.0	Revise	September 8, 1998	Final
	- Industrial product speed bin change:70/100ns → 55/70ns

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

1	Revision 3.0

September 1998

K6T4008C1B Family	CMOS SRAM

512Kx8 bit Low Power CMOS Static RAM

FEATURES

∙Process Technology: TFT

∙Organization: 512Kx8

∙Power Supply Voltage: 4.5~5.5V

∙Low Data Retention Voltage: 2V(Min)

∙Three state output and TTL Compatible

∙Package Type: 32-DIP-600, 32-SOP-525

32-TSOP2-400F/R

GENERAL DESCRIPTION

The K6T4008C1B families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current.

PRODUCT FAMILY

					Power Dissipation
	Product Family	Operating Temperature	Vcc Range	Speed	Standby	Operating	PKG Type
					(ISB1, Max)	(ICC2, Max)
	K6T4008C1B-L	Commercial (0~70°C)			100μA		32-DIP-600, 32-SOP-525
	K6T4008C1B-B				20μA		32-TSOP2-400F/R
			4.5~5.5V	551)/70ns		80mA
	K6T4008C1B-P	Inderstrial (-40~85°C)			100μA		32-SOP-525
	K6T4008C1B-F				50μA		32-TSOP2-400F/R

1. The parameter is measured with 50pF test load.

PIN DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

A18	1							32			VCC					VCC			32				1		A18
A16	2							31			A15					A15			31				2		A16
A14	3							30		A17						A17			30				3		A14
A12	4							29			WE					WE			29				4		A12
A7	5							28			A13					A13			28				5		A7
A6	6	32-DIP						27			A8					A8			27				6		A6
A5	7							26			A9					A9			26	32-TSOP2			7		A5
		32-SOP
A4											A11					A11
	8	32-TSOP2						25											25	(Reverse)			8		A4
A3	9	(Forward)						24			OE					OE			24				9		A3
A2	10							23			A10					A10			23				10		A2
A1	11							22			CS				CS				22				11		A1
A0	12							21			I/O8				I/O8				21				12		A0
I/O1	13							20			I/O7				I/O7				20				13		I/O1
I/O2	14							19			I/O6				I/O6				19				14		I/O2
I/O3	15							18			I/O5				I/O5				18				15		I/O3
VSS	16							17			I/O4				I/O4				17				16		VSS
		Pin Name																	Function
			WE								Write Enable Input
			CS								Chip Select Input
			OE								Output Enable Input
		A0~A18									Address Inputs
		I/O1~I/O8									Data Inputs/Outputs
		Vcc									Power
		Vss									Ground

		Clk gen.	Precharge circuit.
	A18
	A16
	A14
	A12	Row	Memory array
	A7		1024 rows
		select
	A6		512×8 columns
	A5
	A4
	A1
	A0
I/O1		Data	I/O Circuit
I/O8		cont	Column select
		Data
		cont
		A9	A8 A13A17 A15 A10 A11 A3	A2
CS
WE	Control
	logic
OE

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2	Revision 3.0

September 1998

	K6T4008C1B Family			CMOS SRAM
	PRODUCT LIST
	Commercial Temperature Products(0~70°C)		Industrial Temperature Products(-40~85°C)
	Part Name	Function	Part Name	Function
	K6T4008C1B-DL55	32-DIP, 55ns, L-pwr	K6T4008C1B-GP55	32-SOP, 55ns, L-pwr
	K6T4008C1B-DB55	32-DIP, 55ns, LL-pwr	K6T4008C1B-GF55	32-SOP, 55ns, LL-pwr
	K6T4008C1B-DL70	32-DIP, 70ns, L-pwr	K6T4008C1B-GP70	32-SOP, 70ns, L-pwr
	K6T4008C1B-DB70	32-DIP, 70ns, LL-pwr	K6T4008C1B-GF70	32-SOP, 70ns, LL-pwr
	K6T4008C1B-GL55	32-SOP, 55ns, L-pwr	K6T4008C1B-VF55	32-TSOP2-F, 55ns, LL-pwr
	K6T4008C1B-GB55	32-SOP, 55ns, LL-pwr	K6T4008C1B-VF70	32-TSOP2-F, 70ns, LL-pwr
	K6T4008C1B-GL70	32-SOP, 70ns, L-pwr	K6T4008C1B-MF55	32-TSOP2-R, 55ns, LL-pwr
	K6T4008C1B-GB70	32-SOP, 70ns, LL-pwr	K6T4008C1B-MF70	32-TSOP2-R, 70ns, LL-pwr
	K6T4008C1B-VB55	32-TSOP2-F, 55ns, LL-pwr
	K6T4008C1B-VB70	32-TSOP2-F, 70ns, LL-pwr
	K6T4008C1B-MB55	32-TSOP2-R, 55ns, LL-pwr
	K6T4008C1B-MB70	32-TSOP2-R, 70ns, LL-pwr

FUNCTIONAL DESCRIPTION

	CS			OE			WE		I/O Pin	Mode	Power
	H			X1)			X1)		High-Z	Deselected	Standby
	L			H			H		High-Z	Output disbaled	Active
	L			L			H		Dout	Read	Active
	L			X1)			L		Din	Write	Active

1. X means don′t care.( Must be in low or high state.)

ABSOLUTE MAXIMUM RATINGS1)

	Item	Symbol	Ratings	Unit	Remark
	Voltage on any pin relative to Vss	VIN,VOUT	-0.5 to 7.0	V	-
	Voltage on Vcc supply relative to Vss	VCC	-0.5 to 7.0	V	-
	Power Dissipation	PD	1.0	W	-
	Storage temperature	TSTG	-65 to 150	°C	-
	Operating Temperature	TA	0 to 70	°C	K6T4008C1B-L/-B
			-40 to 85	°C	K6T4008C1B-P/-F
	Soldering temperature and time	TSOLDER	260°C, 10sec(Lead Only)	-	-

1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

3	Revision 3.0

September 1998