Samsung K6L0908C2A-TF70, K6L0908C2A-TB70, K6L0908C2A-TB55, K6L0908C2A-GP70, K6L0908C2A-GL70 Datasheet
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K6L0908C2A Family |
CMOS SRAM |
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Document Title
64Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. |
History |
Draft Data |
Remark |
0.0 |
Initial draft |
Novemer 28, 1993 |
Design target |
0.1 |
Revision |
May 13, 1994 |
Preliminary |
1.0 |
Finalize |
December 1, 1994 |
Final |
2.0 |
Revision |
August 12, 1995 |
Final |
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- Add 45ns part with 30pf test load. |
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3.0 |
Revision |
April 15, 1996 |
Final |
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- Change Data Sheet format : |
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One data sheets for industrial and commercial product |
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4.0 |
Revision |
January 9, 1998 |
Final |
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- Change Data Sheet format |
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- Remove 45ns part from commercial product and 100ns part |
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from industrial product
- Remove low power part form TSOP package
The attached data, sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 |
Revision 4.0 |
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January 1997 |
K6L0908C2A Family |
CMOS SRAM |
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64Kx8 bit Low Power CMOS Static RAM
FEATURES
∙Process Technology: Poly Load
∙Organization: 64Kx8
∙Power Supply Voltage: 4.5~5.5V
∙Low Data Retention Voltage: 2V(Min)
∙Three state output and TTL Compatible
∙Package Type: 32-SOP-525, 32-TSOP1-0820F
GENERAL DESCRIPTION
The K6L0908C2A families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
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Power Dissipation |
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Product Family |
Operating Temperature |
VCC Range |
Speed |
Standby |
Operating |
PKG Type |
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(ISB1, Max) |
(ICC2, Max) |
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K6L0908C2A-L |
Commercial (0~70°C) |
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55/70ns |
100μA |
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K6L0908C2A-B |
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20μA |
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32-SOP |
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4.5 to 5.5V |
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70mA |
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32-TSOP1-F |
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K6L0908C2A-P |
Industrial (-40~85°C) |
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100μA |
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70ns |
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K6L0908C2A-F |
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50μA |
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PIN DESCRIPTION FUNCTIONAL BLOCK DIAGRAM
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VCC |
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N.C |
1 |
32 |
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N.C |
2 |
31 |
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A15 |
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A14 |
3 |
30 |
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CS2 |
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A12 |
4 |
29 |
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WE |
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A11 |
1 |
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32 |
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OE |
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A7 |
5 |
28 |
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A13 |
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A9 |
2 |
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31 |
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A10 |
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A8 |
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3 |
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30 |
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CS1 |
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A6 |
6 |
27 |
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A8 |
A13 |
4 |
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29 |
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I/O8 |
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WE |
5 |
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28 |
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I/O7 |
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A5 |
7 |
26 |
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A9 |
CS2 |
6 |
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27 |
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I/O6 |
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32-SOP 25 |
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A15 |
7 |
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26 |
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I/O5 |
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A4 |
8 |
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A11 VCC |
8 |
32-TSOP |
25 |
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I/O4 |
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24 |
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NC |
9 |
Type1 - Forward |
24 |
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VSS |
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A3 |
9 |
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OE |
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NC |
10 |
23 |
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A2 |
10 |
23 |
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A10 |
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I/O3 |
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A14 |
11 |
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22 |
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I/O2 |
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22 |
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A12 |
12 |
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21 |
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I/O1 |
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A1 |
11 |
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CS1 |
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A7 |
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13 |
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20 |
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A0 |
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A0 |
12 |
21 |
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I/O8 |
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A6 |
14 |
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19 |
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A1 |
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I/O1 |
13 |
20 |
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I/O7 |
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A5 |
15 |
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18 |
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A2 |
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I/O2 |
14 |
19 |
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I/O6 |
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A4 |
16 |
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17 |
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A3 |
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I/O3 |
15 |
18 |
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I/O5 |
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VSS |
16 |
17 |
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I/O4 |
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Name |
Function |
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CS1, CS2 |
Chip Select Inputs |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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A0~A15 |
Address Inputs |
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I/O1~I/O8 |
Data Inputs/Outputs |
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Vcc |
Power |
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Vss |
Ground |
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N.C |
No Connection |
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Clk gen. |
Precharge circuit. |
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A3 |
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A4 |
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A5 |
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A6 |
Row |
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Memory array |
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512 rows |
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A7 |
select |
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128×8 columns |
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A12 |
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A13 |
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A14 |
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A15 |
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I/O1 |
Data |
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I/O Circuit |
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I/O8 |
cont |
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Column select |
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Data |
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cont |
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A0 |
A1 |
A2 |
A8 |
A9 |
A10 |
A11 |
CS1 |
Control |
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CS2 |
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WE |
Logic |
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OE |
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SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 |
Revision 4.0 |
|
January 1997 |
|
K6L0908C2A Family |
|
CMOS SRAM |
|
|
|
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PRODUCT LIST |
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Commercial Temperature Products(0~70°C) |
Industrial Temperature Products(-40~85°C) |
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Part Name |
Function |
Part Name |
Function |
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K6L0908C2A-GL55 |
32-SOP, 55ns, L-pwr |
K6L0908C2A-GP70 |
32-SOP, 70ns, L-pwr |
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K6L0908C2A-GB55 |
32-SOP, 55ns, LL-pwr |
K6L0908C2A-GF70 |
32-SOP, 70ns, LL-pwr |
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K6L0908C2A-GL70 |
32-SOP, 70ns, L-pwr |
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K6L0908C2A-GB70 |
32-SOP, 70ns, LL-pwr |
K6L0908C2A -TF70 |
32-TSOP1-F, 70ns, LL-pwr |
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K6L0908C2A-TB55 |
32-TSOP1-F, 55ns, LL-pwr |
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K6L0908C2A-TB70 |
32-TSOP1-F, 70ns, LL-pwr |
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FUNCTIONAL DESCRIPTION
CS1 |
CS2 |
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OE |
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I/O Pin |
Mode |
Power |
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H |
X1) |
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X1) |
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X1) |
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High-Z |
Deselected |
Standby |
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X1) |
L |
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X1) |
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X1) |
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High-Z |
Deselected |
Standby |
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L |
H |
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H |
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H |
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High-Z |
Output Disabled |
Active |
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L |
H |
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L |
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H |
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Dout |
Read |
Active |
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L |
H |
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X1) |
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L |
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Din |
Write |
Active |
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1. X means don′t care.(Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item |
Symbol |
Ratings |
Unit |
Remark |
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Voltage on any pin relative to Vss |
VIN,VOUT |
-0.5 to |
7.0 |
V |
- |
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Voltage on Vcc supply relative to Vss |
VCC |
-0.5 to |
7.0 |
V |
- |
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Power Dissipation |
PD |
1.0 |
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W |
- |
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Storage temperature |
TSTG |
-65 to 150 |
°C |
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Operating Temperature |
TA |
0 to 70 |
°C |
K6L0908C2A-C |
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-40 to |
85 |
°C |
K6L0908C2A-I |
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Soldering temperature and time |
TSOLDER |
260°C, 10sec(Lead Only) |
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1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3 |
Revision 4.0 |
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January 1997 |
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