Samsung K6T0808C1D-DB55, K6T0808C1D-TP70, K6T0808C1D-TL70, K6T0808C1D-TB70, K6T0808C1D-TB55 Datasheet
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K6T0808C1D Family |
CMOS SRAM |
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Document Title
32Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No |
History |
Draft Data |
Remark |
0.0 |
Initial draft |
May 18, 1997 |
Design target |
0.1 |
First revision |
April 1, 1997 |
Preliminily |
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- KM62256DL/DLI ISB1 = 100 → 50μA |
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KM62256DL-L ISB1 = 20 → 10μA |
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KM62256DLI-L ISB1 = 50 → 15μA |
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- CIN = 6 → 8pF, CIO = 8 → 10pF |
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- KM62256D-4/5/7 Family |
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tOH = 5 → 10ns |
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- KM62256DL/DLI IDR = 50→30μA |
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KM62256DL-L/DLI-L IDR = 30 → 15μA |
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1.0 |
Finalize |
November 11, 1997 |
Final |
- Remove ICC write value
- Improved operating current ICC2 = 70 → 60mA
- Improved standby current KM62256DL/DLI ISB1 = 50 → 30μA KM62256DL-L ISB1 = 10 → 5μA KM62256DLI-L ISB1 = 15 → 5μA
- Improved data retention current KM62256DL/DLI IDR = 30 → 5μA KM62256DL-L/DLI-L IDR = 15 → 3μA
- Remove 45ns part from commercial product and 100ns part from industrial product.
Replace test load 100pF to 50pF for 55ns part
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision 1.0
November 1997
K6T0808C1D Family |
CMOS SRAM |
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32Kx8 bit Low Power CMOS Static RAM
FEATURES
∙Process Technology : TFT
∙Organization : 32Kx8
∙Power Supply Voltage : 4.5~5.5V
∙Low Data Retention Voltage : 2V(Min)
∙Three state output and TTL Compatible
∙Package Type : 28-DIP-600B, 28-SOP-450
28-TSOP1-0813.4 F/R
GENERAL DESCRIPTION
The K6T0808C1D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.
PRODUCT FAMILY
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Power Dissipation |
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Product Family |
Operating Temperature |
VCC Range |
Speed |
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PKG Type |
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Standby |
Operating |
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(ISB1, Max) |
(Icc2, Max) |
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K6T0808C1D-L |
Commercial (0~70°C) |
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551)/70ns |
30μA |
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28-DIP,28-SOP |
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K6T0808C1D-B |
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5μA |
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28-TSOP1-F/R |
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4.5 to 5.5V |
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60mA |
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K6T0808C1D-P |
Industrial (-40~85°C) |
70ns |
30μA |
28-SOP |
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K6T0808C1D-F |
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5μA |
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28-TSOP1-F/R |
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1. The parameter is tested with 50pF test load.
PIN DESCRIPTION |
FUNCTIONAL BLOCK DIAGRAM |
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28 |
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A10 |
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OE |
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A11 |
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CS |
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A9 |
3 |
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I/O8 |
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A14 |
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28 |
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VCC |
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A8 |
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25 |
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I/O7 |
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A13 |
5 |
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I/O6 |
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I/O5 |
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A12 |
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2 |
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27 |
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WE |
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28-TSOP |
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WE |
VCC |
7 |
22 |
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I/O4 |
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Type1 - Forward |
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A7 |
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A13 |
A14 |
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VSS |
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4 |
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A12 |
9 |
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I/O3 |
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A6 |
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25 |
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A8 |
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A7 |
10 |
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I/O2 |
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A5 |
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A9 |
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A6 |
11 |
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I/O1 |
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A5 |
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A0 |
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A4 |
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A11 |
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A4 |
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A1 |
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7 |
28-DIP |
22 |
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A3 |
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15 |
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A2 |
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A3 |
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OE |
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8 |
28-SOP |
21 |
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A10 |
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A3 |
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A2 |
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A2 |
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A4 |
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A1 |
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A1 |
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CS |
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A5 |
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A0 |
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A0 |
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I/O8 |
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A6 |
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I/O1 |
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A7 |
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I/O2 |
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I/O1 |
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I/O7 |
A12 |
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28-TSOP |
20 |
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I/O3 |
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I/O6 |
A14 |
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VSS |
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I/O2 |
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VCC |
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7 |
Type1 - Reverse |
22 |
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I/O4 |
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I/O3 |
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I/O5 |
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WE |
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6 |
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I/O5 |
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A13 |
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I/O6 |
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VSS |
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I/O4 |
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A8 |
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I/O7 |
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A9 |
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I/O8 |
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A11 |
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CS |
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1 |
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28 |
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A10 |
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OE |
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Pin Name |
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Function |
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Pin Name |
Function |
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CS |
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Chip Select Input |
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I/O1~I/O8 |
Data Inputs/Outputs |
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OE |
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Output Enable Input |
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Vcc |
Power |
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WE |
Write Enable Input |
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Vss |
Ground |
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A0~A14 |
Address Inputs |
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NC |
No connect |
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Clk gen. |
Precharge circuit. |
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A13 |
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A8 |
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A12 |
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A14 |
Row |
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Memory array |
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256 rows |
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select |
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A4 |
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128×8 columns |
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A5 |
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A6 |
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A7 |
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I/O1 |
Data |
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I/O Circuit |
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I/O8 |
cont |
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Column select |
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Data |
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cont |
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A10 |
A3 |
A0 |
A1 |
A2 |
A9 |
A11 |
CS |
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Control |
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WE |
Logic |
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OE |
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SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Revision 1.0
November 1997
K6T0808C1D Family |
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CMOS SRAM |
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PRODUCT LIST |
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Commercial Temperature Products(0~70°C) |
Industrial Temperature Products(-40~85°C) |
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Part Name |
Function |
Part Name |
Function |
K6T0808C1D-DL55 |
28-DIP, 55ns, L-pwr |
K6T0808C1D-GP70 |
28-SOP, 70ns, L-pwr |
K6T0808C1D-DB55 |
28-DIP, 55ns, LL-pwr |
K6T0808C1D-GF70 |
28-SOP, 70ns, LL-pwr |
K6T0808C1D-DL70 |
28-DIP, 70ns, L-pwr |
K6T0808C1D-TP70 |
28-TSOP1 F, 70ns, L-pwr |
K6T0808C1D-DB70 |
28-DIP, 70ns, LL-pwr |
K6T0808C1D-TF70 |
28-TSOP1 F, 70ns, LL-pwr |
K6T0808C1D-GL55 |
28-SOP, 55ns, L-pwr |
K6T0808C1D-RP70 |
28-TSOP1 R, 70ns, L-pwr |
K6T0808C1D-GB55 |
28-SOP, 55ns, LL-pwr |
K6T0808C1D-RF70 |
28-TSOP1 R, 70ns, LL-pwr |
K6T0808C1D-GL70 |
28-SOP, 70ns, L-pwr |
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K6T0808C1D-GB70 |
28-SOP, 70ns, LL-pwr |
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K6T0808C1D-TL55 |
28-TSOP1 F, 55ns, L-pwr |
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K6T0808C1D-TB55 |
28-TSOP1 F, 55ns, LL-pwr |
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K6T0808C1D-TL70 |
28-TSOP1 F, 70ns, L-pwr |
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K6T0808C1D-TB70 |
28-TSOP1 F, 70ns, LL-pwr |
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K6T0808C1D-RL55 |
28-TSOP1 R, 55ns, L-pwr |
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K6T0808C1D-RB55 |
28-TSOP1 R, 55ns, LL-pwr |
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K6T0808C1D-RL70 |
28-TSOP1 R, 70ns, L-pwr |
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K6T0808C1D-RB70 |
28-TSOP1 R, 70ns, LL-pwr |
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FUNCTIONAL DESCRIPTION
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CS |
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OE |
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WE |
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I/O |
Mode |
Power |
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H |
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X1) |
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X1) |
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High-Z |
Deselected |
Standby |
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L |
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H |
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H |
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High-Z |
Output Disabled |
Active |
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L |
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L |
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H |
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Dout |
Read |
Active |
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L |
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X1) |
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L |
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Din |
Write |
Active |
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1. X means don′t care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS1)
Item |
Symbol |
Ratings |
Unit |
Remark |
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Voltage on any pin relative to Vss |
VIN,VOUT |
-0.5 to 7.0 |
V |
- |
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Voltage on Vcc supply relative to Vss |
VCC |
-0.5 to 7.0 |
V |
- |
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Power Dissipation |
PD |
1.0 |
W |
- |
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Storage temperature |
TSTG |
-65 to 150 |
°C |
- |
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Operating Temperature |
TA |
0 to 70 |
°C |
K6T0808C1D-L |
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-40 to 85 |
°C |
K6T0808C1D-P |
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Soldering temperature and time |
TSOLDER |
260°C, 10sec (Lead Only) |
- |
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1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Revision 1.0
November 1997
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