Samsung KM6264BLP-7L, KM6264BLP-7, KM6264BLP-10L, KM6264BLP-10, KM6264BLGI-10L Datasheet

KM6264B Family						CMOS SRAM
8Kx8 bit Low Power CMOS Static RAM
	FEATURE SUMMARY				GENERAL DESCRIPTION
	∙ Process Technology : CMOS				The KM6264B family is fabricated by SAMSUNG's
	∙ Organization : 8K x 8				advanced CMOS process technology. The family
	∙ Power Supply Voltage : Single 5V ± 10%				can support various operating temperature ranges
	∙ Low Data Retention Voltage : 2V(Min)				and has various package types for user flexibility of
	∙ Three state output and TTL Compatible				system design. The family also support low data
	∙ Package Type : JEDEC Standard				retention voltage for battery back-up operations with
		28-DIP, 28-SOP			low data retention current.
	PRODUCT FAMILY
	Product		Operating	Speed	PKG Type	Power Dissipation
	Family		Temperature			Standby(Isb1, Max)	Operating(Icc2)
	KM6264BL		Commercial	70/100/120ns	28-DIP, 28-SOP	100uA
	KM6264BL-L		(0~70 °C)			10uA
	KM6264BLE		Extended	100*ns	28-SOP	100uA	55mA
	KM6264BLE-L		(-25~-85 °C)			50uA
	KM6264BLI		Industrial	100*ns	28-SOP	100uA
	KM6264BLI-L		(-40~85 °C)			50uA

* measured with 30pF test load

PIN DESCRIPTION

N.C		1	28				Vcc
A12		2	27				/WE
A7		3	26				CS2
A6		4	25				A8
A5		5	24				A9
A4		6	23				A11
A3		7	28-Pin DIP 22				/OE
A2		8	28-Pin SOP 21				A10
A1		9	20				/CS1
A0		10	19				I/O8
I/O1		11	18				I/O7
I/O2		12	17				I/O6
I/O3		13	16				I/O5
Vss		14	15				I/O4

FUNCTIONAL BLOCK DIAGRAM

Y-Decoder

A0~A12

Decoder-X

I/O1~8

Cell Array

I/O Buffer

Logic Control

/CS1, CS2 /WE, /OE

Pin Name	Function
A0~A12	Address Inputs
/WE	Write Enable Input
/CS1, CS2	Chip Select Input
/OE	Output Enable Input
I/O1~I/O8	Data Input/Output
Vcc	Power(5V)
Vss	Ground
N.C	No Connection

1	Revision. 0.0

Auust. 1996

ELECTRONICS

	KM6264B Family							CMOS SRAM
	PRODUCT LIST & ORDERING INFORMATION
	PRODUCT LIST
	Commercial Temp Products			Extended Temp Products		Industrial Temp Products
		(0~70 °C)		(-25~85 °C)			(-40~85 °C)
	Part Name		Function	Part Name	Function	Part Name		Function
	KM6264BLP-7		28-DIP, 70ns, L-pwr	KM6264BLGE-10	28-SOP, 100ns, L-pwr	KM6264BLGI-10		28-SOP, 100ns, L-pwr
	KM6264BLP-7L		28-DIP, 70ns, , LL-pwr	KM6264BLGE-10L	28-SOP, 100ns, LL-pwr	KM6264BLGI-10L		28-SOP, 100ns, LL-pwr
	KM6264BLP-10		28-DIP, 100ns, , L-pwr
	KM6264BLP-10L		28-DIP, 100ns, LL-pwr
	KM6264BLP-12		28-DIP, 120ns, , L-pwr
	KM6264BLP-12L		28-DIP, 120ns, LL-pwr
	KM6264BLG-7		28-SOP, 70ns, L-pwr
	KM6264BLG-7L		28-SOP, 70ns, LL-pwr
	KM6264BLG-10		28-SOP, 100ns, L-pwr
	KM6264BLG-10L		28-SOP, 100ns, LL-pwr
	KM6264BLG-12		28-SOP, 120ns, L-pwr
	KM6264BLG-12L		28-SOP, 120ns, LL-pwr

ORDERING INFORMATION

K M6 2 X 64 B X X XX - XX X

L-Low Low Power, Blank-Low Power or High Power

Access Time : 7=70ns, 10=100ns, 12=120ns

Operating Temperature :

I=Industrial, E=Extended, Blank=Commercial

Package Type : G=SOP, P=DIP,

L-Low Power or Low Low Power, Blank-High Power

Die Version : B=3rd generation

Density : 64=64K bit

Blank=5V

Organization : 2= x8

SEC Standard SRAM

2	Revision. 0.0

Auust. 1996

ELECTRONICS

KM6264B Family					CMOS SRAM
ABSOLUTE MAXIMUM RATINGS *
	Item	Symbol	Ratings	Unit	Remark
	Voltage on any pin relative to Vss	Vin, Vout	-0.5 to Vcc+0.5	V	-
	Voltage on Vcc supply relative to Vss	Vcc	-0.5 to 7.0	V	-
	Power Dissipation	Pd	1.0	W	-
	Storage temperature	Tstg	-65 to 150	°C	-
	Operating Temperature	Ta	0 to 70	°C	KM6264BL/L-L
			-25 to 85	°C	KM6264BLE/LE-L
			-40 to 85	°C	KM6264BLI/LI-L
	Soldering temperature and time	Tsolder	260 °C, 10sec(Lead Only)	-	-

* Stresses greater than those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS*

Item	Symbol	Min	Typ**	Max	Unit
Supply voltage	Vcc	4.5	5.0	5.5	V
Ground	Vss	0	0	0	V
Input high voltage	Vih	2.2	-	Vcc+0.5	V
Input low voltage	Vil	-0.5***	-	0.8	V

*1) Commercial Product : Ta=0 to 70 ° C, unless otherwise specified

2)Extended Product : Ta=-25 to 85 ° C, unless otherwise specified

3)Industrial Product : Ta=-40 to 85 ° C, unless otherwise specified

**Ta=25 ° C

***Vil(min)=-3.0V for ¡ Â50ns pulse

CAPACITANCE * (f=1MHz, Ta=25 °C)

Item	Symbol	Test Condition	Min	Max	Unit
Input capacitance	Cin	Vin=0V	-	6	pF
Input/Output capacitance	Cio	Vio=0V	-	8	pF

* Capacitance is sampled not 100% tested

3	Revision. 0.0

Auust. 1996

ELECTRONICS