Philips BZX399-C9V1, BZX399-C7V5, BZX399-C6V8, BZX399-C12, BZX399-C10 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D049

BZX399 series

Voltage regulator diodes

Product specification			1999 Jun 04

Philips Semiconductors	Product specification
Voltage regulator diodes	BZX399 series

FEATURES

∙Total power dissipation: max. 300 mW

∙Tolerance: ±5%

∙Working voltage range: nom. 1.8 to 43 V (E24 range)

∙Improved IZ/VZ characteristic at low currents

(IZ = 50 μA). This results in a noise free and sharp breakdown knee.

APPLICATIONS

∙General regulation functions, where low noise at low currents is required

∙Low power consumption applications (e.g. hand-held applications).

DESCRIPTION

Low-power low noise voltage regulator diodes in SOD323 plastic SMD package.

The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 34 types with nominal working voltages from 1.8 to 43 V.

MARKING

PINNING

PIN	DESCRIPTION
1	cathode
2	anode

handbook, halfpage 1	2
Top view
		MAM387

Fig.1 Simplified outline (SOD323) and symbol.

	TYPE NUMBER	MARKING	TYPE NUMBER	MARKING	TYPE NUMBER	MARKING	TYPE NUMBER	MARKING
		CODE		CODE		CODE		CODE
	BZX399-C1V8	B1	BZX399-C4V3	B0	BZX399-C10	BJ	BZX399-C24	BT
	BZX399-C2V0	B2	BZX399-C4V7	BA	BZX399-C11	BK	BZX399-C27	BU
	BZX399-C2V2	B3	BZX399-C5V1	BB	BZX399-C12	BL	BZX399-C30	BV
	BZX399-C2V4	B4	BZX399-C5V6	BC	BZX399-C13	BM	BZX399-C33	BW
	BZX399-C2V7	B5	BZX399-C6V2	BD	BZX399-C15	BN	BZX399-C36	BX
	BZX399-C3V0	B6	BZX399-C6V8	BE	BZX399-C16	BP	BZX399-C39	BY
	BZX399-C3V3	B7	BZX399-C7V5	BF	BZX399-C18	BQ	BZX399-C43	BZ
	BZX399-C3V6	B8	BZX399-C8V2	BG	BZX399-C20	BR
	BZX399-C3V9	B9	BZX399-C9V1	BH	BZX399-C22	BS

1999 Jun 04

2

Philips Semiconductors					Product specification
Voltage regulator diodes				BZX399 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.	UNIT
IF	continuous forward current		−		250	mA
IZSM	non-repetitive peak reverse current	tp = 100 μs; square wave;	see Tables 1 and 2
		Tamb = 25 °C prior to surge
Ptot	total power dissipation	Tamb = 25 °C; note 1	−		300	mW
Tstg	storage temperature		−65		+150	°C
Tj	junction temperature		−		150	°C

Note

1. Device mounted on a FR4 printed circuit-board.

ELECTRICAL CHARACTERISTICS

Total BZX399-C series

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MAX.	UNIT
VF	forward voltage	IF = 10 mA; see Fig.5	0.9	V
		IF = 100 mA; see Fig.5	1.0	V
IR	reverse current
	BZX399-C1V8	VR = 1 V	2	μA
	BZX399-C2V0	VR = 1 V	1	μA
	BZX399-C2V2	VR = 1 V	0.5	μA
	BZX399-C2V4	VR = 1 V	0.2	μA
	BZX399-C2V7	VR = 1 V	0.05	μA
	BZX399-C3V0	VR = 1 V	0.02	μA
	BZX399-C3V3	VR = 2 V	2	μA
	BZX399-C3V6	VR = 2 V	1	μA
	BZX399-C3V9	VR = 2 V	0.5	μA
	BZX399-C4V3	VR = 2 V	0.1	μA
	BZX399-C4V7	VR = 3 V	2	μA
	BZX399-C5V1	VR = 3 V	1	μA
	BZX399-C5V6	VR = 4 V	1	μA
	BZX399-C6V2	VR = 5 V	0.1	μA
	BZX399-C6V8	VR = 5 V	0.01	μA
	BZX399-C7V5	VR = 5 V	0.1	μA
	BZX399-C8V2	VR = 6 V	0.2	μA
	BZX399-C9V1	VR = 7 V	0.1	μA
	BZX399-C10	VR = 7 V	0.1	μA
	BZX399-C11	VR = 8 V	0.05	μA
	BZX399-C12	VR = 9 V	0.05	μA
	BZX399-C13	VR = 10 V	0.05	μA
	BZX399-C15 to 43	VR = 0.7VZnom	0.01	μA

1999 Jun 04

3

	Philips Semiconductors							Product specification
	Voltage regulator diodes							BZX399 series
	Table 1 Per type BZX399-C1V8 to C15
	Tj = 25 °C unless otherwise specified.
		WORKING			VOLTAGE	TEMP. COEFF.	DIODE CAP.	NON-REPETITIVE PEAK
		VOLTAGE			CHANGE	SZ (mV/K)	Cd (pF)	REVERSE CURRENT
	BZX399-C	VZ (V)			VZ(V)	IZ = 50 μA	at f = 1 MHz;	IZSM (A) at tp = 100 μs;
		IZ = 50 μA			(note 1)	(see Figs 2, 3 and 4)	VR = 0 V	Tamb = 25 °C
	XXX
		Tol. ±5%
		MIN.		MAX.	MAX.	TYP.	MAX.	MAX.
	1V8	1.71		1.89	0.65	−0.85	425	6.0
	2V0	1.90		2.10	0.70	−0.95	410	6.0
	2V2	2.09		2.31	0.75	−1.05	390	6.0
	2V4	2.28		2.52	0.80	−1.15	370	6.0
	2V7	2.57		2.84	0.85	−1.35	350	6.0
	3V0	2.85		3.15	0.90	−1.50	325	6.0
	3V3	3.14		3.47	0.93	−1.65	310	6.0
	3V6	3.42		3.78	0.95	−1.80	300	6.0
	3V9	3.71		4.10	0.97	−1.95	290	6.0
	4V3	4.09		4.52	0.99	−2.05	280	6.0
	4V7	4.47		4.94	0.97	−1.90	275	6.0
	5V1	4.85		5.36	0.60	0.15	300	5.0
	5V6	5.32		5.88	0.20	1.75	275	4.0
	6V2	5.89		6.51	0.10	2.35	250	3.0
	6V8	6.46		7.14	0.10	3.00	215	3.0
	7V5	7.13		7.88	0.15	3.60	170	3.0
	8V2	7.79		8.61	0.15	4.25	150	3.0
	9V1	8.65		9.56	0.10	5.00	120	3.0
	10	9.50		10.50	0.10	5.80	110	3.0
	11	10.45		11.55	0.11	6.70	110	2.5
	12	11.40		12.60	0.12	7.65	105	2.5
	13	12.35		13.65	0.13	8.60	105	2.5
	15	14.25		15.75	0.15	10.50	100	2.0

Note

1.VZ = VZ at 100 μA minus VZ at 10 μA.

1999 Jun 04

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