ON Semiconductor TIP140, TIP141, TIP142, TIP145, TIP146 Service Manual
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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low frequency switching applications.
Features
• High DC Current Gain −
Min hFE = 1000 @ IC
=5.0 A, VCE = 4 V
•Collector−Emitter Sustaining Voltage − @ 30 mA
VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145
=80 Vdc (Min) − TIP141, TIP146
=100 Vdc (Min) − TIP142, TIP147
•Monolithic Construction with Built−In Base−Emitter Shunt Resistor
•Pb−Free Packages are Available*
MAXIMUM RATINGS
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TIP140 |
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TIP141 |
TIP142 |
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Rating |
Symbol |
TIP145 |
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TIP146 |
TIP147 |
Unit |
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Collector − Emitter Voltage |
VCEO |
60 |
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80 |
100 |
Vdc |
Collector − Base Voltage |
VCB |
60 |
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80 |
100 |
Vdc |
Emitter − Base Voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current |
IC |
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10 |
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Adc |
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− Continuous |
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15 |
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− Peak (Note 1) |
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Base Current − Continuous |
IB |
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0.5 |
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Adc |
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Total Power Dissipation |
PD |
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125 |
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W |
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@ TC = 25_C |
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Operating and Storage |
TJ, Tstg |
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−65 to +150 |
_C |
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Junction Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, |
RqJC |
1.0 |
°C/W |
Junction−to−Case |
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Thermal Resistance, |
RqJA |
35.7 |
°C/W |
Junction−to−Ambient |
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Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. 5 ms, v 10% Duty Cycle.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
MARKING DIAGRAM
AYWWG
TIP14x
A |
= Assembly Location |
Y |
= Year |
WW |
= Work Week |
TIP14x |
= Device Code |
x |
= 0, 1, 2, 5, 6, or 7 |
G |
= Pb−Free Package |
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2005 |
1 |
Publication Order Number: |
September, 2005 − Rev. 5 |
|
TIP140/D |
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
DARLINGTON SCHEMATICS
NPN |
COLLECTOR |
PNP |
COLLECTOR |
TIP140 |
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TIP145 |
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TIP141 |
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TIP146 |
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TIP142 |
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TIP147 |
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BASE |
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BASE |
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≈ 8.0 k |
≈ 40 |
≈ 8.0 k |
≈ 40 |
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EMITTER |
|
EMITTER |
ORDERING INFORMATION
Device |
Package |
Shipping |
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TIP140 |
SOT−93 (TO−218) |
30 Units / Rail |
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TIP140G |
SOT−93 (TO−218) |
30 Units / Rail |
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(Pb−Free) |
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TIP141 |
SOT−93 (TO−218) |
30 Units / Rail |
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TIP141G |
SOT−93 (TO−218) |
30 Units / Rail |
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(Pb−Free) |
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TIP142 |
SOT−93 (TO−218) |
30 Units / Rail |
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TIP142G |
SOT−93 (TO−218) |
30 Units / Rail |
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(Pb−Free) |
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TIP145 |
SOT−93 (TO−218) |
30 Units / Rail |
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TIP145G |
SOT−93 (TO−218) |
30 Units / Rail |
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(Pb−Free) |
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TIP146 |
SOT−93 (TO−218) |
30 Units / Rail |
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TIP146G |
SOT−93 (TO−218) |
30 Units / Rail |
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(Pb−Free) |
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TIP147 |
SOT−93 (TO−218) |
30 Units / Rail |
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TIP147G |
SOT−93 (TO−218) |
30 Units / Rail |
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(Pb−Free) |
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2
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
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Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector−Emitter Sustaining Voltage (Note 2) |
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VCEO(sus) |
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Vdc |
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(IC = 30 mA, IB = 0) |
TIP140, TIP145 |
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60 |
− |
− |
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TIP141, TIP146 |
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80 |
− |
− |
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TIP142, TIP147 |
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100 |
− |
− |
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Collector Cutoff Current |
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ICEO |
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mA |
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(VCE = 30 Vdc, IB = 0) |
TIP140, TIP145 |
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− |
− |
2.0 |
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(VCE = 40 Vdc, IB = 0) |
TIP141, TIP146 |
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− |
− |
2.0 |
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(VCE = 50 Vdc, IB = 0) |
TIP142, TIP147 |
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− |
− |
2.0 |
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Collector Cutoff Current |
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ICBO |
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mA |
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(VCB = 60 V, IE = 0) |
TIP140, TIP145 |
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− |
− |
1.0 |
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(VCB = 80 V, IE = 0) |
TIP141, TIP146 |
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− |
− |
1.0 |
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(VCB = 100 V, IE = 0) |
TIP142, TIP147 |
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− |
− |
1.0 |
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Emitter Cutoff Current (VBE = 5.0 V) |
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IEBO |
− |
− |
2 0 |
mA |
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ON CHARACTERISTICS (Note 2) |
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DC Current Gain |
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hFE |
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− |
(IC = 5.0 A, VCE = 4.0 V) |
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1000 |
− |
− |
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(IC = 10 A, VCE = 4.0 V) |
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500 |
− |
− |
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Collector−Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 5.0 A, IB = 10 mA) |
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− |
− |
2.0 |
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(IC = 10 A, IB = 40 mA) |
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− |
− |
3.0 |
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Base−Emitter Saturation Voltage |
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VBE(sat) |
− |
− |
3.5 |
Vdc |
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(IC = 10 A, IB = 40 mA) |
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Base−Emitter On Voltage |
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VBE(on) |
− |
− |
3.0 |
Vdc |
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(IC = 10 A, VCE = 4.0 Vdc) |
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SWITCHING CHARACTERISTICS |
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Resistive Load (See Figure 1) |
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Delay Time |
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td |
− |
0.15 |
− |
ms |
Rise Time |
(VCC = 30 V, IC = 5.0 A, |
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tr |
− |
0.55 |
− |
ms |
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IB = 20 mA, Duty Cycle v 2.0%, |
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Storage Time |
|
ts |
− |
2.5 |
− |
ms |
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IB1 = IB2, RC & RB Varied, TJ = 25_C) |
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Fall Time |
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tf |
− |
2.5 |
− |
ms |
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. |
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10 |
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RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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PNP |
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−30 V |
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5.0 |
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NPN |
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D1, MUST BE FAST RECOVERY TYPE, eg: |
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1N5825 USED ABOVE IB ≈ 100 mA |
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R |
C |
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t |
s |
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MSD6100 USED BELOW IB ≈ 100 mA |
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SCOPE |
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TUT |
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2.0 |
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μs)( |
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V2 |
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R |
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tf |
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approx |
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B |
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51 |
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≈ 8.0 k |
≈ 40 |
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TIMEt, |
1.0 |
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+12 V |
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0 |
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D1 |
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tr |
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0.5 |
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V1 |
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+4.0 V |
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VCC = 30 V |
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appox. |
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t |
@ V |
= 0 |
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−8.0 V |
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d |
BE(off) |
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IC/IB = 250 |
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25 ms |
for td and tr, D1 is disconnected |
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0.2 |
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IB1 = IB2 |
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tr, tf ≤ 10 ns |
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and V2 = 0 |
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0.1 |
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TJ = 25°C |
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DUTY CYCLE = 1.0% |
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For NPN test circuit reverse diode and voltage polarities. |
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0.2 |
0.5 |
1.0 |
3.0 |
5.0 |
10 |
20 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 1. Switching Times Test Circuit |
Figure 2. Switching Times |
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3
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