ON Semiconductor TIP110, TIP111, TIP112, TIP115, TIP116 Service Manual
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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
TIP111, TIP112, TIP116, and TIP117 are Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for general-purpose amplifier and low-speed switching applications.
Features
• High DC Current Gain -
hFE = 2500 (Typ) @ IC
= 1.0 Adc
• Collector-Emitter Sustaining Voltage - @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) - TIP110, TIP115
=80 Vdc (Min) - TIP111, TIP116
=100 Vdc (Min) - TIP112, TIP117
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• Pb-Free Packages are Available*
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DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
TO-220AB |
TIP11xG |
|
CASE 221A |
||
AYWW |
||
STYLE 1 |
||
|
1
2
3
TIP11x |
= Device Code |
x |
= 0, 1, 2, 5, 6, or 7 |
A= Assembly Location
Y= Year
WW = Work Week
G= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
♥ Semiconductor Components Industries, LLC, 2007 |
1 |
Publication Order Number: |
November, 2007 - Rev. 6 |
|
TIP110/D |
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
MAXIMUM RATINGS
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TIP110, |
TIP111, |
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TIP112, |
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Rating |
Symbol |
TIP115 |
TIP116 |
|
TIP117 |
Unit |
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Collector-Emitter Voltage |
VCEO |
60 |
80 |
|
100 |
Vdc |
|
Collector-Base Voltage |
VCB |
60 |
80 |
|
100 |
Vdc |
|
Emitter-Base Voltage |
VEB |
|
5.0 |
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|
Vdc |
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Collector Current - |
Continuous |
IC |
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2.0 |
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Adc |
- |
Peak |
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4.0 |
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Base Current |
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IB |
|
50 |
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mAdc |
Total Power Dissipation @ TC = 25°C |
PD |
|
50 |
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|
W |
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Derate above 25°C |
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|
0.4 |
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W/°C |
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Total Power Dissipation @ TA = 25°C |
PD |
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2.0 |
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W |
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Derate above 25°C |
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0.016 |
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W/°C |
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Unclamped Inductive Load Energy - Figure 13 |
E |
|
25 |
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mJ |
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Operating and Storage Junction |
TJ, Tstg |
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–65 to +150 |
|
°C |
||
THERMAL CHARACTERISTICS
Characteristics |
Symbol |
Max |
Unit |
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|
|
|
Thermal Resistance, Junction-to-Case |
RqJC |
2.5 |
°C/W |
Thermal Resistance, Junction-to-Ambient |
RqJA |
62.5 |
°C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device |
Package |
Shipping |
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|
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TIP110 |
TO-220 |
50 Units / Rail |
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|
TIP110G |
TO-220 |
50 Units / Rail |
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(Pb-Free) |
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|
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TIP111 |
TO-220 |
50 Units / Rail |
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|
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TIP111G |
TO-220 |
50 Units / Rail |
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(Pb-Free) |
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TIP112 |
TO-220 |
50 Units / Rail |
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TIP112G |
TO-220 |
50 Units / Rail |
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(Pb-Free) |
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TIP115 |
TO-220 |
50 Units / Rail |
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TIP115G |
TO-220 |
50 Units / Rail |
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(Pb-Free) |
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TIP116 |
TO-220 |
50 Units / Rail |
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TIP116G |
TO-220 |
50 Units / Rail |
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(Pb-Free) |
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TIP117 |
TO-220 |
50 Units / Rail |
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TIP117G |
TO-220 |
50 Units / Rail |
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(Pb-Free) |
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2
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Emitter Sustaining Voltage (Note 1) |
|
VCEO(sus) |
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|
Vdc |
|
(IC = 30 mAdc, IB = 0) |
TIP110, TIP115 |
|
60 |
- |
|
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TIP111, TIP116 |
|
80 |
- |
|
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TIP112, TIP117 |
|
100 |
- |
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Collector Cutoff Current |
|
ICEO |
|
|
mAdc |
|
(VCE = 30 Vdc, IB = 0) |
TIP110, TIP115 |
|
- |
2.0 |
|
|
(VCE = 40 Vdc, IB = 0) |
TIP111, TIP116 |
|
- |
2.0 |
|
|
(VCE = 50 Vdc, IB = 0) |
TIP112 ,TIP117 |
|
- |
2.0 |
|
|
Collector Cutoff Current |
|
ICBO |
|
|
mAdc |
|
(VCB = 60 Vdc, IE = 0) |
TIP110, TIP115 |
|
- |
1.0 |
|
|
(VCB = 80 Vdc, IE = 0) |
TIP111, TIP116 |
|
- |
1.0 |
|
|
(VCB = 100 Vdc, IE = 0) |
TIP112, TIP117 |
|
- |
1.0 |
|
|
Emitter Cutoff Current |
|
IEBO |
- |
2.0 |
mAdc |
|
(VBE = 5.0 Vdc, IC = 0) |
|
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ON CHARACTERISTICS (Note 1) |
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DC Current Gain |
|
hFE |
|
|
- |
|
(IC = 1.0 Adc, VCE = 4.0 Vdc) |
|
|
1000 |
- |
|
|
(IC = 2.0 Adc, VCE = 4.0 Vdc) |
|
|
500 |
- |
|
|
Collector-Emitter Saturation Voltage |
|
VCE(sat) |
- |
2.5 |
Vdc |
|
(IC = 2.0 Adc, IB = 8.0 mAdc) |
|
|
|
|
|
|
Base-Emitter On Voltage |
|
VBE(on) |
- |
2.8 |
Vdc |
|
(IC = 2.0 Adc, VCE = 4.0 Vdc) |
|
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DYNAMIC CHARACTERISTICS |
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Small-Signal Current Gain |
|
hfe |
25 |
- |
- |
|
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) |
|
|
|
|
|
|
Output Capacitance |
|
Cob |
|
|
pF |
|
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
TIP115, TIP116, TIP117 |
|
- |
200 |
|
|
|
TIP110, TIP111, TIP112 |
|
- |
100 |
|
|
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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
|
TA |
TC |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
2.0 |
40 |
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,POWER |
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TC |
|
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|
1.0 |
20 |
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TA |
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D |
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P |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
|
|
0 |
T, TEMPERATURE (°C)
Figure 1. Power Derating
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3
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