ON Semiconductor NTHD5903T1 Technical data

NTHD5903T1

NTHD5903T1

Power MOSFET

Dual P-Channel ChipFET

2.1 Amps, 20 Volts

Features

•Low RDS(on) for Higher Efficiency

•Logic Level Gate Drive

•Miniature ChipFET Surface Mount Package Saves Board Space

Applications

•Power Management in Portable and Battery±Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

			Steady
Rating	Symbol	5 secs	State		Unit
Drain±Source Voltage	VDS	±20			V
Gate±Source Voltage	VGS	12			V
Continuous Drain Current	ID				A
(TJ = 150°C) (Note 1)
TA = 25°C		2.9		2.1
TA = 85°C		2.1		1.5
Pulsed Drain Current	IDM	10			A
Continuous Source Current	IS	±1.8		±0.9	A
(Diode Conduction) (Note 1)
Maximum Power Dissipation	PD				W
(Note 1)
TA = 25°C		2.1		1.1
TA = 85°C		1.1		0.6
Operating Junction and Storage	TJ, Tstg	±55 to +150			°C
Temperature Range

1. Surface Mounted on 1″ x 1″ FR4 Board.

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DUAL P±CHANNEL 2.1 AMPS, 20 VOLTS RDS(on) = 155 m

S 1	S2
G1	G2
D1	D 2
P±Channel MOSFET	P±Channel MOSFET

ChipFET

CASE 1206A

STYLE 2

PIN CONNECTIONS							MARKING
							DIAGRAM
D1					S1	1		8
		8	1
D1		7	2		G1	2	A7	7
D2		6	3		S2	3		6
D2		5	4		G2	4		5

A7 = Specific Device Code

ORDERING INFORMATION

Device	Package	Shipping
NTHD5903T1	ChipFET	3000/Tape & Reel

Semiconductor Components Industries, LLC, 2002	1	Publication Order Number:
March, 2002 ± Rev. 2		NTHD5903T1/D

NTHD5903T1

THERMAL CHARACTERISTICS

Characteristic	Symbol	Typ	Max	Unit
Maximum Junction±to±Ambient (Note 2)	RthJA			°C/W
t 5 sec		50	60
Steady State		90	110
Maximum Junction±to±Foot (Drain)	RthJF	30	40	°C/W
Steady State

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic	Symbol	Test Condition	Min	Typ	Max	Unit
Static
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = ±250 A	±0.6	±	±	V
Gate±Body Leakage	IGSS	VDS = 0 V, VGS = 12 V	±	±	100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = ±16 V, VGS = 0 V	±	±	±1.0	A
		VDS = ±16 V, VGS = 0 V,	±	±	±5.0
		TJ = 85°C
On±State Drain Current (Note 3)	ID(on)	VDS ±5.0 V, VGS = ±4.5 V	±10	±	±	A
Drain±Source On±State Resistance (Note 3)	rDS(on)	VGS = ±4.5 V, ID = ±2.1 A	±	0.130	0.155
		VGS = ±3.6 V, ID = ±2.0 A	±	0.150	0.180
		VGS = ±2.5 V, ID = ±1.7 A	±	0.215	0.260
Forward Transconductance (Note 3)	gfs	VDS = ±10 V, ID = ±2.1 A	±	5.0	±	S
Diode Forward Voltage (Note 3)	VSD	IS = ±0.9 A, VGS = 0 V	±	±0.8	±1.2	V
Dynamic (Note 4)
Total Gate Charge	Qg		±	3.0	6.0	nC
		VDS = ±10 V, VGS = ±4.5 V,
Gate±Source Charge	Qgs		±	0.9	±
		ID = ±2.1 A
Gate±Drain Charge	Qgd		±	0.6	±
Turn±On Delay Time	td(on)		±	13	20	ns
Rise Time	t	VDD = ±10 V, RL = 10	±	35	55
	r	ID ±1.0 A, VGEN = ±4.5 V,
Turn±Off Delay Time	td(off)		±	25	40
		RG = 6
Fall Time	tf		±	25	40
Source±Drain Reverse Recovery Time	trr	IF = ±0.9 A, di/dt = 100 A/ s	±	40	80

2.Surface Mounted on 1″ x 1″ FR4 Board.

3.Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

4.Guaranteed by design, not subject to production testing.

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						NTHD5903T1
					TYPICAL ELECTRICAL CHARACTERISTICS
	10			VGS = 4 V ± 10 V					10
						3.6 V						°
(AMPS)								(AMPS)				125 C
	8					3.4	V		8		25°C		TC = ±55°C
					TJ = 25°C
CURRENT	6					3 V		CURRENT	6
						2.8	V
DRAIN	4					2.6	V	DRAIN	4
				VGS	= 1.4 V	2.4	V
D,	2					2.2	V	D,	2
I						1.8 V		I
	0								0
	0	1	2	3	4	5		6	0	1	2	3	4	5
		±VDS, DRAIN±TO±SOURCE VOLTAGE (VOLTS)								VGS, GATE±TO±SOURCE VOLTAGE (VOLTS)

RDS(on), DRAIN±TO±SOURCE RESISTANCE ( )

Figure 1. On±Region Characteristics

4

ID = ±2.1 A

TJ = 25°C

3

2

1

0

0

1

2

3

4

5

±VGS, GATE±TO±SOURCE VOLTAGE (VOLTS)

Figure 3. On±Resistance vs. Gate±to±Source Voltage

Figure 2. Transfer Characteristics

( )	0.4
RESISTANCE
	0.35							TJ	= 25°C
	0.3
DRAIN±TO±SOURCE			VGS = ±2.5 V
	0.25
	0.2						VGS = ±3.6 V
	0.15
	0.1						VGS = ±4.5 V
DS(on),
	0.05	2	3			6	7
R	1			4	5			8	9	10

±ID, DRAIN CURRENT (AMPS)

Figure 4. On±Resistance vs. Drain Current and Gate Voltage

DRAIN±TO±SOURCE	(NORMALIZED)
R	RESISTANCE
DS(on),

1.6

1.0E±6

ID = ±2.1 A

VGS = 0 V

VGS = ±4.5 V

1.4

(A)

1.0E±7

TJ = 150°C

1.2

,LEAKAGE

1.0E±8

TJ = 100°C

1

1.0E±9

DSS

I

TJ = 25°C

0.8

1.0E±10

0.6

1.0E±11

±50	±25	0	25	50	75	100	125	150	0	4	8	12	16	20
		TJ, JUNCTION TEMPERATURE (°C)								±VDS, DRAIN±TO±SOURCE VOLTAGE (VOLTS)
	Figure 5. On±Resistance Variation with									Figure 6. Drain±to±Source Leakage Current
			Temperature								vs. Voltage

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