OKI MSM5117400F-70SJ, MSM5117400F-60SJ, MSM5117400F-50SJ, MSM5117400F-70TS-K, MSM5117400F-60TS-K Datasheet

FEDD5117400F-01

1Semiconductor

MSM5117400F

This version: June. 2000 Previous version :

4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM5117400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117400F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5117400F is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP.

FEATURES

∙ 4,194,304-word × 4-bit configuration

∙ Single 5V power supply, ± 10% tolerance

∙ Input	: TTL compatible, low input capacitance
∙ Output	: TTL compatible, 3-state

∙Refresh : 2048 cycles/32ms

∙Fast page mode, read modify write capability

∙CAS before RAS refresh, hidden refresh, RAS-only refresh capability

∙Packages

26/24-pin 300mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5117400F-xxSJ) 26/24-pin 300mil plastic TSOP (TSOPII26/24-P-300-0.80-K) (Product : MSM5117400F-xxTS-K)

						xx indicates speed rank.
PRODUCT FAMILY
			Access Time (Max.)			Cycle Time	Power Dissipation
	Family
		tRAC	tAA	tCAC	tOEA	(Min.)	Operating	Standby
							(Max.)	(Max.)
		50ns	25ns	13ns	13ns	90ns	550mW
	MSM5117400F	60ns	30ns	15ns	15ns	110ns	495mW	5.5mW
		70ns	35ns	20ns	20ns	130ns	440mW

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FEDD5117400F-01

1Semiconductor

MSM5117400F

PIN CONFIGURATION (TOP VIEW)

VCC	1	26	VSS
DQ1 2		25	DQ4
DQ2 3		24	DQ3
WE 4		23 CAS
RAS 5		22	OE
NC 6		21	A9
A10	8	19	A8
A0	9	18	A7
A1	10	17	A6
A2	11	16	A5
A3	12	15	A4
VCC 13		14	VSS
		26/24-Pin Plastic
		SOJ

	VCC		1				VSS
					26
DQ1 2							DQ4
					25
DQ2 3							DQ3
					24
	WE 4				23		CAS
RAS 5					22		OE
	NC 6						A9
					21
A10			8				A8
					19
	A0		9				A7
					18
	A1		10				A6
					17
	A2		11				A5
					16
	A3		12				A4
					15
	VCC 13						VSS
					14

26/24-Pin Plastic TSOP

(K Type)

Pin Name	Function
A0–A10	Address Input
RAS	Row Address Strobe
CAS	Column Address Strobe
DQ1–DQ4	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (5V)
VSS	Ground (0V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.

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FEDD5117400F-01

1Semiconductor

MSM5117400F

BLOCK DIAGRAM

RAS

Timing

Generator

Timing

CAS

Generator

Write

WE

Column

Clock

OE

11

11

Generator

Address

Column Decoders

Buffers

4

Output

4

Buffers

Internal

Refresh

Sense Amplifiers

4

I/O

4

4

DQ1 −

DQ4

A0 −

Selector

A10

Address

Control Clock

Input

Counter

4

4

Buffers

Row

Row

11

Address

11

Buffers

Deco-

Word

Memory

ders

Drivers

Cells

VCC

On Chip

VBB Generator

VSS

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FEDD5117400F-01

1Semiconductor

MSM5117400F

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage VCC Supply relative to VSS

VT

–0.5 to VCC+0.5

V

Short Circuit Output Current

IOS

50

mA

Power Dissipation

PD*

1

W

Operating Temperature

Topr

0 to 70

°C

Storage Temperature

Tstg

–55 to 150

°C

*: Ta = 25° C

RECOMMENDED OPERATING CONDITIONS

(Ta = 0 to 70°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Power Supply Voltage

VCC

4.5

5.0

5.5

V

VSS

0

0

0

V

Input High Voltage

V

IH

2.4

V + 0.5*1

V

CC

Input Low Voltage

VIL

− 0.5*2

0.8

V

Notes: *1. The input voltage is VCC + 1.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied).

*2. The input voltage is VSS − 1.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied).

PIN CAPACITANCE

			(Vcc = 5V ±	10%, Ta = 25°C, f = 1 MHz)
Parameter	Symbol	Min.	Typ.		Min.	Unit
Input Capacitance (A0 – A10)	CIN1	—	—		5	pF
Input Capacitance	CIN2	—	—		7	pF
(RAS, CAS, WE, OE)
Output Capacitance (DQ1 – DQ4)	CI/O	—	—		7	pF

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FEDD5117400F-01

1Semiconductor

MSM5117400F

DC CHARACTERISTICS

(VCC = 5V ±

10%, Ta = 0 to 70°C)

MSM5117400

MSM5117400

MSM5117400

Parameter

Symbol

Condition

F-50

F-60

F-70

Unit

Note

Min.

Max.

Min.

Max.

Min.

Max.

Output High Voltage

VOH

IOH = − 5.0mA

2.4

VCC

2.4

VCC

2.4

VCC

V

Output Low Voltage

VOL

IOL = 4.2mA

0

0.4

0

0.4

0

0.4

V

Input Leakage

0V ≤ VI ≤ 6.5V;

ILI

All other pins not

−

10

10

−

10

10

−

10

10

A

Current

under test = 0V

Output Leakage

ILO

DQ disable

−

10

10

−

10

10

−

10

10

A

Current

0V ≤ VO ≤ VCC

Average Power

RAS, CAS cycling,

Supply Current

ICC1

100

90

80

mA

1,2

tRC = Min.

(Operating)

Power Supply

RAS, CAS = VIH

2

2

2

Current

ICC2

RAS, CAS

1

1

1

mA

1

(Standby)

≥ VCC − 0.2V

Average Power

RAS cycling,

Supply Current

ICC3

CAS = VIH,

100

90

80

mA

1,2

(RAS-only Refresh)

tRC = Min.

Power Supply

RAS = VIH,

Current

ICC5

CAS = VIL,

5

5

5

mA

1

(Standby)

DQ = enable

Average Power

Supply Current

ICC6

RAS = cycling,

100

90

80

mA

1,2

(CAS before RAS

CAS before RAS

Refresh)

Average Power

RAS = VIL,

Supply Current

ICC7

CAS cycling,

80

70

60

mA

1,3

(Fast Page Mode)

tPC = Min.

Notes: 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

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