OKI MSM5117400D-70SJ, MSM5117400D-50TS-K, MSM5117400D-70TS-K, MSM5117400D-60SJ, MSM5117400D-50SJ Datasheet

Semiconductor

This version: Jun. 2000

MSM5117400D

4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM5117400D is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5117400D is available in a 26/24-pin plastic SOJ, 26/24-pin plastic TSOP.

FEATURES

• 4,194,304-word × 4-bit configuration

•Single 5V power supply, ± 10% tolerance

•	Input	: TTL compatible, low input capacitance
•	Output	: TTL compatible, 3-state
•	Refresh	: 2048 cycles/32 ms

•Fast page mode, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•Multi-bit test mode capability

•Package options:

26/24-pin 300mil plastic SOJ	(SOJ26/24-P-300-1.27)	(Product : MSM5117400D-xxSJ)
26/24-pin 300mil plastic TSOP	(TSOPII26/24-P-300-1.27-K) (Product : MSM5117400D-xxTS-K)
		xx : indicates speed rank.

PRODUCT FAMILY

Family		Access Time (Max.)					Cycle Time	Power Dissipation
	tRAC		tAA	tCAC		tOEA	(Min.)	Operating (Max.)	Standby (Max.)
MSM5117400D-50	50ns		25ns	13ns		13ns	90ns	550mW
MSM5117400D-60	60ns		30ns	15ns		15ns	110ns	495mW	5.5mW
MSM5117400D-70	70ns		35ns	20ns		20ns	130ns	440mW

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MSM5117400D

PIN CONFIGRATION (TOP VIEW)

											VCC
	VCC		1		26		VSS					1		26		VSS
DQ1 2										DQ1 2
					25		DQ4							25		DQ4
DQ2 3										DQ2 3
					24		DQ3							24		DQ3
	WE 4				23		CAS				WE 4			23	CAS
RAS 5					22		OE			RAS 5				22		OE
	NC 6				21		A9				NC 6			21		A9
A10			8		19		A8			A10		8		19		A8
	A0		9		18		A7				A0	9		18		A7
	A1		10		17		A6				A1	10		17		A6
	A2		11		16		A5				A2	11		16		A5
	A3		12		15		A4				A3	12		15		A4
	VCC 13				14		VSS				VCC 13			14		VSS
			26/24-Pin Plastic SOJ									26/24-Pin Plastic TSOP
													(K Type)

Pin Name							Function
A0–A10							Address Input
							Row Address Strobe
	RAS
							Column Address Strobe
	CAS
DQ1–DQ4							Data Input/Data Output
							Output Enable
		OE
							Write Enable
	WE
	VCC						Power Supply (5V)
	VSS						Ground (0V)
		NC					No Connection

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MSM5117400D

BLOCK DIAGRAM

RAS	Timing
	Generator
							Timing
CAS							Generator
							Write		WE
	Column						Clock			OE
11							Generator
	Address			11	Column Decoders
	Buffers							4	Output	4
									Buffers
	Internal		Refresh		Sense Amplifiers	4	I/O	4		4	DQ1 - DQ4
A0 – A10							Selector
	Address		Control Clock
									Input
	Counter
								4		4
									Buffers
11	Row	11	Row
	Address			Word	Memory
	Buffers		Deco-
			ders	Drivers	Cells

VCC

On Chip

VBB Generator

VSS

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				MSM5117400D
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
	Parameter	Symbol	Rating		Unit
	Voltage on Any Pin Relative to VSS	VIN, VOUT	− 0.5 to VCC + 0.5		V
	Voltage VCC supply Relative to VSS	VCC	0.5 to 7.0		V
	Short Circuit Output Current	IOS	50		mA
	Power Dissipation	PD*	1		W
	Operating Temperature	Topr	0 to 70		°C
	Storage Temperature	Tstg	− 55 to 150		°C
		*: Ta = 25°C

Recommended Operating Conditions

(Ta = 0°C to 70°C)

	Parameter	Symbol	Min.	Typ.	Max.	Unit
	Power Supply Voltage	VCC	4.5	5.0	5.5	V
		VSS	0	0	0	V
	Input High Voltage	VIH	2.4		VCC + 0.5*1	V
	Input Low Voltage	VIL	− 0.5*2		0.8	V

Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied).

*2. The input voltage is VSS − 2.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied).

Capacitance

(VCC = 5V ± 10%, Ta = 25°C, f=1MHz)

Parameter

Symbol

Typ.

Max.

Unit

Input Capacitance (A0 – A10)

CIN1

5

pF

Input Capacitance

CIN2

7

pF

(RAS, CAS, WE, OE)

Output Capacitance (DQ1 – DQ4)

CI/O

7

pF

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MSM5117400D

DC Characteristics

(VCC = 5V ± 10%, Ta = 0°C to 70°C)

MSM5117400

MSM5117400

MSM5117400

Parameter

Symbol

Condition

D-50

D-60

D-70

Unit

Note

Min.

Max

Min.

Max

Min.

Max

Output High Voltage

VOH

IOH = − 5.0mA

2.4

VCC

2.4

VCC

2.4

VCC

V

Output Low Voltage

VOL

IOL = 4.2mA

0

0.4

0

0.4

0

0.4

V

Input Leakage

0V ≤ VI ≤ 6.5V ;

ILI

All other pins not

− 10

10

− 10

10

− 10

10

A

Current

under test = 0V

Output Leakage

ILO

DQ disable

− 10

10

− 10

10

− 10

10

A

Current

0V ≤ VO ≤ VCC

Average Power

RAS, CAS cycling,

Supply Current

ICC1

100

90

80

mA

1,2

t

= Min.

(Operating)

RC

Power Supply

RAS,

CAS

= VIH

2

2

2

Current

ICC2

≥

mA

1

RAS,

CAS

1

1

1

(Standby)

VCC – 0.2V

Average Power

RAS

cycling,

Supply Current

ICC3

CAS

= VIH,

100

90

80

mA

1,2

(RAS

-only Refresh)

tRC = Min.

Power Supply

RAS

= VIH,

Current

ICC5

5

5

5

mA

1

CAS

= VIL,

(Standby)

DQ = enable

Average Power

Supply Current

ICC6

RAS

= cycling,

100

90

80

mA

1,2

(CAS before RAS

CAS before RAS

Refresh)

Average Power

RAS

= VIL,

Supply Current

ICC7

80

70

60

mA

1,3

CAS

cycling,

(Fast Page Mode)

tPC = Min.

Notes: 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

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