E2G0153-29-41
This version: Apr. 1999
Semiconductor MSM5116160D/DSL
¡ Semiconductor
Previous version: Oct. 1998
MSM5116160D/DSL
1,048,576-Word ´ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5116160D/DSL is a 1,048,576-word ´ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116160D/DSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM5116160D/DSL is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP. The MSM5116160DSL (the self-refresh version) is specially designed for lower-power applications.
FEATURES
•1,048,576-word ´ 16-bit configuration
•Single 5 V power supply, ±10% tolerance
• Input : TTL compatible, low input capacitance
•Output : TTL compatible, 3-state
•Refresh : 4096 cycles/64 ms, 4096 cycles/128 ms (SL version)
•Fast page mode, read modify write capability
•CAS before RAS refresh, hidden refresh, RAS-only refresh capability
•CAS before RAS self-refresh capability (SL version)
•Package options:
42-pin 400 mil plastic SOJ (SOJ42-P-400-1.27) (Product : MSM5116160D/DSL-xxJS) 50/44-pin 400 mil plastic TSOP (TSOPII50/44-P-400-0.80-K)(Product:MSM5116160D/DSL-xxTS-K)
(TSOPII50/44-P-400-0.80-L) (Product:MSM5116160D/DSL-xxTS-L) xx indicates speed rank.
PRODUCT FAMILY
Family |
Access Time (Max.) |
Cycle Time |
Power Dissipation |
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(Min.) |
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tRAC |
tAA |
tCAC |
tOEA |
Operating (Max.) |
Standby (Max.) |
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MSM5116160D/DSL-50 |
50 ns |
25 ns |
13 ns |
13 ns |
90 ns |
495 mW |
5.5 mW/ |
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MSM5116160D/DSL-60 |
60 ns |
30 ns |
15 ns |
15 ns |
110 ns |
468 mW |
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1.1 mW (SL version) |
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MSM5116160D/DSL-70 |
70 ns |
35 ns |
20 ns |
20 ns |
130 ns |
440 mW |
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1/16
¡ Semiconductor |
MSM5116160D/DSL |
PIN CONFIGURATION (TOP VIEW)
VCC |
1 |
42 |
VSS |
VCC |
1 |
DQ1 |
2 |
41 |
DQ16 |
DQ1 |
2 |
DQ2 |
3 |
40 |
DQ15 |
DQ2 |
3 |
DQ3 |
4 |
39 |
DQ14 |
DQ3 |
4 |
DQ4 |
5 |
38 |
DQ13 |
DQ4 |
5 |
VCC |
6 |
37 |
VSS |
VCC |
6 |
DQ5 |
7 |
36 |
DQ12 |
DQ5 |
7 |
DQ6 |
8 |
35 |
DQ11 |
DQ6 |
8 |
DQ7 |
9 |
34 |
DQ10 |
DQ7 |
9 |
DQ8 10 |
33 |
DQ9 |
DQ8 10 |
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NC 11 |
32 |
NC |
NC 11 |
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NC 12 |
31 |
LCAS |
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WE 13 |
30 |
UCAS |
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RAS 14 |
29 |
OE |
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A11R 15 |
28 |
A9R |
NC 15 |
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A10R 16 |
27 |
A8R |
NC 16 |
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A0 |
17 |
26 |
A7 |
WE 17 |
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A1 |
18 |
25 |
A6 |
RAS 18 |
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A2 |
19 |
24 |
A5 |
A11R 19 |
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A3 |
20 |
23 |
A4 |
A10R 20 |
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VCC 21 |
22 |
VSS |
A0 |
21 |
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A1 |
22 |
42-Pin Plastic SOJ |
A2 |
23 |
A3 24
VCC 25
50 |
VSS |
VSS |
50 |
1 |
VCC |
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49 |
DQ16 |
DQ16 |
49 |
2 |
DQ1 |
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48 |
DQ15 |
DQ15 |
48 |
3 |
DQ2 |
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47 |
DQ14 |
DQ14 |
47 |
4 |
DQ3 |
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46 |
DQ13 |
DQ13 |
46 |
5 |
DQ4 |
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45 |
VSS |
VSS |
45 |
6 |
VCC |
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44 |
DQ12 |
DQ12 |
44 |
7 |
DQ5 |
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43 |
DQ11 |
DQ11 |
43 |
8 |
DQ6 |
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42 |
DQ10 |
DQ10 |
42 |
9 |
DQ7 |
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41 |
DQ9 |
DQ9 |
41 |
10 |
DQ8 |
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40 |
NC |
NC |
40 |
11 |
NC |
36 |
NC |
NC |
36 |
15 |
NC |
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LCAS |
LCAS |
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35 |
35 |
16 |
NC |
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UCAS |
UCAS |
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WE |
34 |
34 |
17 |
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OE |
OE |
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RAS |
33 |
33 |
18 |
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A9R |
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32 |
A9R |
32 |
19 |
A11R |
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A8R |
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31 |
A8R |
31 |
20 |
A10R |
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A7 |
A7 |
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30 |
30 |
21 |
A0 |
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A6 |
A6 |
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29 |
29 |
22 |
A1 |
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A5 |
A5 |
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28 |
28 |
23 |
A2 |
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A4 |
A4 |
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27 |
27 |
24 |
A3 |
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26 |
VSS |
VSS |
26 |
25 |
VCC |
50/44-Pin Plastic TSOP |
50/44-Pin Plastic TSOP |
(K Type) |
(L Type) |
Pin Name |
Function |
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A0 - A7, |
Address Input |
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A8R - A11R |
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RAS |
Row Address Strobe |
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LCAS |
Lower Byte Column Address Strobe |
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UCAS |
Upper Byte Column Address Strobe |
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DQ1 - DQ16 |
Data Input/Data Output |
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OE |
Output Enable |
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WE |
Write Enable |
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VCC |
Power Supply (5 V) |
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VSS |
Ground (0 V) |
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NC |
No Connection |
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Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.
2/16
¡ Semiconductor MSM5116160D/DSL
BLOCK DIAGRAM
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Timing |
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WE |
OE |
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RAS |
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Generator |
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LCAS |
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I/O |
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Controller |
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Output |
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UCAS |
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8 |
8 |
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I/O |
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Buffers |
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Controller |
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DQ1 - DQ8 |
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Column |
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8 |
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8 |
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Column Decoders |
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Input |
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Address |
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8 |
8 |
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Buffers |
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Buffers |
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Internal |
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Sense Amplifiers 16 |
I/O |
16 |
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A0 - A7 |
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Refresh |
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Selector |
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Address |
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Counter |
Control Clock |
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8 |
Input |
8 |
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8 |
Row |
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Buffers |
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Row |
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Memory |
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Address |
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DQ9 - DQ16 |
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A8R - A11R |
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12 Deco- |
Word |
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4 |
Buffers |
ders |
Drivers |
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Cells |
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Output |
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8 |
8 |
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Buffers |
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VCC |
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On Chip |
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VBB Generator |
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On Chip |
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IVCC Generator |
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VSS |
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FUNCTION TABLE
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Input Pin |
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DQ Pin |
Function Mode |
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RAS |
LCAS |
UCAS |
WE |
OE |
DQ1 - DQ8 DQ9 - DQ16 |
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H |
* |
* |
* |
* |
High-Z |
High-Z |
Standby |
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L |
H |
H |
* |
* |
High-Z |
High-Z |
Refresh |
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L |
L |
H |
H |
L |
DOUT |
High-Z |
Lower Byte Read |
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L |
H |
L |
H |
L |
High-Z |
DOUT |
Upper Byte Read |
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L |
L |
L |
H |
L |
DOUT |
DOUT |
Word Read |
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L |
L |
H |
L |
H |
DIN |
Don't Care |
Lower Byte Write |
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L |
H |
L |
L |
H |
Don't Care |
DIN |
Upper Byte Write |
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L |
L |
L |
L |
H |
DIN |
DIN |
Word Write |
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L |
L |
L |
H |
H |
High-Z |
High-Z |
— |
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*: "H" or "L"
3/16
¡ Semiconductor MSM5116160D/DSL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
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Parameter |
Symbol |
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Rating |
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Unit |
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Voltage on Any Pin Relative to VSS |
VIN, VOUT |
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–0.5 to VCC + 0.5 |
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V |
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Voltage on VCC Supply Relative to VSS |
VCC |
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–0.5 to 7 |
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V |
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Short Circuit Output Current |
IOS |
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50 |
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mA |
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Power Dissipation |
PD* |
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1 |
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W |
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Operating Temperature |
Topr |
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0 to 70 |
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°C |
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Storage Temperature |
Tstg |
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–55 to 150 |
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°C |
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*: Ta = 25°C |
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Recommended Operating Conditions |
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(Ta = 0°C to 70°C) |
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Parameter |
Symbol |
Min. |
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Typ. |
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Max. |
Unit |
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Power Supply Voltage |
VCC |
4.5 |
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5.0 |
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5.5 |
V |
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VSS |
0 |
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0 |
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0 |
V |
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Input High Voltage |
VIH |
2.4 |
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— |
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VCC + 0.5*1 |
V |
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Input Low Voltage |
VIL |
–0.5*2 |
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— |
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0.8 |
V |
Notes : *1. TheinputvoltageisVCC +2.0Vwhenthepulsewidthislessthan20ns(thepulsewidth is with respect to the point at which VCC is applied).
*2. TheinputvoltageisVSS –2.0Vwhenthepulsewidthislessthan20ns(thepulsewidth is with respect to the point at which VSS is applied).
Capacitance
(VCC = 5 V ±10%, Ta = 25°C, f = 1 MHz)
Parameter |
Symbol |
Typ. |
Max. |
Unit |
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Input Capacitance |
CIN1 |
— |
5 |
pF |
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(A0 - A7, A8R - A11R) |
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Input Capacitance |
CIN2 |
— |
7 |
pF |
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(RAS, LCAS, UCAS, WE, OE) |
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Output Capacitance (DQ1 - DQ16) |
CI/O |
— |
7 |
pF |
4/16
¡ Semiconductor |
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MSM5116160D/DSL |
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DC Characteristics |
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(VCC = 5 V ±10%, Ta = 0°C to 70°C) |
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MSM5116160 |
MSM5116160 |
MSM5116160 |
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Parameter |
Symbol |
Condition |
D/DSL-50 |
D/DSL-60 |
D/DSL-70 |
Unit |
Note |
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Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
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Output High Voltage |
VOH |
IOH = –5.0 mA |
2.4 |
VCC |
2.4 |
VCC |
2.4 |
VCC |
V |
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Output Low Voltage |
VOL |
IOL = 4.2 mA |
0 |
0.4 |
0 |
0.4 |
0 |
0.4 |
V |
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0 V £ VI £ 6.5 V; |
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Input Leakage Current |
ILI |
All other pins not |
–10 |
10 |
–10 |
10 |
–10 |
10 |
mA |
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under test = 0 V |
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Output Leakage Current |
ILO |
DQ disable |
–10 |
10 |
–10 |
10 |
–10 |
10 |
mA |
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0 V £ VO £ VCC |
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Average Power |
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RAS, CAS cycling, |
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Supply Current |
ICC1 |
— |
90 |
— |
85 |
— |
80 |
mA |
1, 2 |
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tRC = Min. |
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(Operating) |
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Power Supply |
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RAS, CAS = VIH |
— |
2 |
— |
2 |
— |
2 |
mA |
1 |
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ICC2 |
RAS, CAS |
— |
1 |
— |
1 |
— |
1 |
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Current (Standby) |
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³ VCC –0.2 V |
— |
200 |
— |
200 |
— |
200 |
mA |
1, 5 |
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Average Power |
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RAS cycling, |
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Supply Current |
ICC3 |
CAS = VIH, |
— |
90 |
— |
85 |
— |
80 |
mA |
1, 2 |
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(RAS-only Refresh) |
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tRC = Min. |
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Power Supply |
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RAS = VIH, |
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ICC5 |
CAS = VIL, |
— |
5 |
— |
5 |
— |
5 |
mA |
1 |
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Current (Standby) |
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DQ = enable |
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Average Power |
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RAS cycling, |
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Supply Current |
ICC6 |
— |
90 |
— |
85 |
— |
80 |
mA |
1, 2 |
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CAS before RAS |
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(CAS before RAS Refresh) |
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Average Power |
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RAS = VIL, |
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Supply Current |
ICC7 |
CAS cycling, |
— |
85 |
— |
80 |
— |
75 |
mA |
1, 3 |
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(Fast Page Mode) |
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tPC = Min. |
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Average Power |
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tRC = 125 ms, |
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1, 4, |
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Supply Current |
ICC10 |
CAS before RAS, |
— |
400 |
— |
400 |
— |
400 |
mA |
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5 |
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(Battery Backup) |
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tRAS £ 1 ms |
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Average Power |
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Supply Current |
ICCS |
RAS £ 0.2 V, |
— |
300 |
— |
300 |
— |
300 |
mA |
1, 5 |
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(CAS before RAS |
CAS £ 0.2 V |
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Self-Refresh) |
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Notes : 1. ICC Max. is specified as ICC for output open condition.
2.The address can be changed once or less while RAS = VIL.
3.The address can be changed once or less while CAS = VIH.
4.VCC – 0.2 V £ VIH £ VCC + 0.5 V, –0.5 V £ VIL £ 0.2 V.
5.SL version.
5/16
¡ Semiconductor |
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MSM5116160D/DSL |
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AC Characteristics (1/2) |
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(VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3 |
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MSM5116160 |
MSM5116160 |
MSM5116160 |
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Parameter |
Symbol |
D/DSL-50 |
D/DSL-60 |
D/DSL-70 |
Unit |
Note |
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Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
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Random Read or Write Cycle Time |
tRC |
90 |
— |
110 |
— |
130 |
— |
ns |
|
|
|
Read Modify Write Cycle Time |
tRWC |
131 |
— |
155 |
— |
185 |
— |
ns |
|
|
|
Fast Page Mode Cycle Time |
tPC |
35 |
— |
40 |
— |
45 |
— |
ns |
|
|
|
Fast Page Mode Read Modify Write |
tPRWC |
76 |
— |
85 |
— |
100 |
— |
ns |
|
|
|
Cycle Time |
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Access Time from RAS |
tRAC |
— |
50 |
— |
60 |
— |
70 |
ns |
4, 5, 6 |
|
|
Access Time from CAS |
tCAC |
— |
13 |
— |
15 |
— |
20 |
ns |
4, 5 |
|
|
Access Time from Column Address |
tAA |
— |
25 |
— |
30 |
— |
35 |
ns |
4, 6 |
|
|
Access Time from CAS Precharge |
tCPA |
— |
30 |
— |
35 |
— |
40 |
ns |
4, 12 |
|
|
Access Time from OE |
tOEA |
— |
13 |
— |
15 |
— |
20 |
ns |
4 |
|
|
Output Low Impedance Time from CAS |
tCLZ |
0 |
— |
0 |
— |
0 |
— |
ns |
4 |
|
|
CAS to Data Output Buffer Turn-off Delay Time |
tOFF |
0 |
13 |
0 |
15 |
0 |
20 |
ns |
7 |
|
|
OE to Data Output Buffer Turn-off Delay Time |
tOEZ |
0 |
13 |
0 |
15 |
0 |
20 |
ns |
7 |
|
|
Transition Time |
tT |
3 |
50 |
3 |
50 |
3 |
50 |
ns |
3 |
|
|
Refresh Period |
tREF |
— |
64 |
— |
64 |
— |
64 |
ms |
|
|
|
Refresh Period (SL version) |
tREF |
— |
128 |
— |
128 |
— |
128 |
ms |
15 |
|
|
RAS Precharge Time |
tRP |
30 |
— |
40 |
— |
50 |
— |
ns |
|
|
|
RAS Pulse Width |
tRAS |
50 |
10,000 |
60 |
10,000 |
70 |
10,000 |
ns |
|
|
|
RAS Pulse Width (Fast Page Mode) |
tRASP |
50 |
100,000 |
60 |
100,000 |
70 |
100,000 |
ns |
|
|
|
RAS Hold Time |
tRSH |
13 |
— |
15 |
— |
20 |
— |
ns |
|
|
|
RAS Hold Time referenced to OE |
tROH |
13 |
— |
15 |
— |
20 |
— |
ns |
|
|
|
CAS Precharge Time (Fast Page Mode) |
tCP |
7 |
— |
10 |
— |
10 |
— |
ns |
14 |
|
|
CAS Pulse Width |
tCAS |
13 |
10,000 |
15 |
10,000 |
20 |
10,000 |
ns |
|
|
|
CAS Hold Time |
tCSH |
50 |
— |
60 |
— |
70 |
— |
ns |
|
|
|
CAS to RAS Precharge Time |
tCRP |
5 |
— |
5 |
— |
5 |
— |
ns |
12 |
|
|
RAS Hold Time from CAS Precharge |
tRHCP |
30 |
— |
35 |
— |
40 |
— |
ns |
12 |
|
|
RAS to CAS Delay Time |
tRCD |
17 |
37 |
20 |
45 |
20 |
50 |
ns |
5 |
|
|
RAS to Column Address Delay Time |
tRAD |
12 |
25 |
15 |
30 |
15 |
35 |
ns |
6 |
|
|
Row Address Set-up Time |
tASR |
0 |
— |
0 |
— |
0 |
— |
ns |
|
|
|
Row Address Hold Time |
tRAH |
7 |
— |
10 |
— |
10 |
— |
ns |
|
|
|
Column Address Set-up Time |
tASC |
0 |
— |
0 |
— |
0 |
— |
ns |
11 |
|
|
Column Address Hold Time |
tCAH |
7 |
— |
10 |
— |
15 |
— |
ns |
11 |
|
|
Column Address to RAS Lead Time |
tRAL |
25 |
— |
30 |
— |
35 |
— |
ns |
|
|
|
Read Command Set-up Time |
tRCS |
0 |
— |
0 |
— |
0 |
— |
ns |
11 |
|
|
Read Command Hold Time |
tRCH |
0 |
— |
0 |
— |
0 |
— |
ns |
8, 11 |
|
|
Read Command Hold Time referenced to RAS |
tRRH |
0 |
— |
0 |
— |
0 |
— |
ns |
8 |
|
6/16