OKI MSM5117800C-50TS-L, MSM5117800C-50JS, MSM5117800C-70TS-L, MSM5117800C-60TS-L, MSM5117800C-60JS Datasheet

	E2G0112-18-42	Preliminary
	¡ Semiconductor
		This version: Apr. 1998
		MSM5117800C
	Semiconductor

MSM5117800C

2,097,152-Word ´ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM5117800C is a 2,097,152-word ´8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5117800C is available in a 28-pin plastic SOJ or 28-pin plastic TSOP.

FEATURES

•2,097,152-word ´ 8-bit configuration

•Single 5 V power supply, ±10% tolerance

• Input : TTL compatible, low input capacitance

•Output : TTL compatible, 3-state

•Refresh : 2048 cycles/32 ms

•Fast page mode, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•Multi-bit test mode capability

•Package options:

28-pin 400 mil plastic SOJ	(SOJ28-P-400-1.27)	(Product : MSM5117800C-xxJS)
28-pin 400 mil plastic TSOP	(TSOPII28-P-400-1.27-K)	(Product : MSM5117800C-xxTS-K)
	(TSOPII28-P-400-1.27-L)	(Product : MSM5117800C-xxTS-L)
		xx indicates speed rank.

PRODUCT FAMILY

	Family	Access Time (Max.)				Cycle Time	Power Dissipation
						(Min.)
		tRAC	tAA	tCAC	tOEA		Operating (Max.)	Standby (Max.)
	MSM5117800C-50	50 ns	25 ns	13 ns	13 ns	90 ns	660 mW
	MSM5117800C-60	60 ns	30 ns	15 ns	15 ns	110 ns	605 mW	5.5 mW
	MSM5117800C-70	70 ns	35 ns	20 ns	20 ns	130 ns	550 mW

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MSM5117800C

PIN CONFIGURATION (TOP VIEW)
VCC	1	28	VSS	VCC	1	28	VSS
DQ1	2	27	DQ8	DQ1	2	27	DQ8
DQ2	3	26	DQ7	DQ2	3	26	DQ7
DQ3	4	25	DQ6	DQ3	4	25	DQ6
DQ4	5	24	DQ5	DQ4	5	24	DQ5
WE 6		23	CAS	WE 6		23	CAS
RAS	7	22	OE	RAS	7	22	OE
NC	8	21	A9	NC	8	21	A9
A10R	9	20	A8	A10R	9	20	A8
A0	10	19	A7	A0	10	19	A7
A1	11	18	A6	A1	11	18	A6
A2	12	17	A5	A2	12	17	A5
A3	13	16	A4	A3	13	16	A4
VCC 14		15	VSS	VCC 14		15	VSS
	28-Pin Plastic SOJ				28-Pin Plastic TSOP
						(K Type)

VSS	28		1	VCC
DQ8	27		2	DQ1
DQ7	26		3	DQ2
DQ6	25		4	DQ3
DQ5	24		5	DQ4
CAS				WE
	23		6
OE				RAS
	22		7
A9				NC
	21		8
A8				A10R
	20		9
A7				A0
	19		10
A6				A1
	18		11
A5				A2
	17		12
A4				A3
	16		13
VSS	15		14	VCC

28-Pin Plastic TSOP

(L Type)

Pin Name	Function
A0 - A9, A10R	Address Input
RAS	Row Address Strobe
CAS	Column Address Strobe
DQ1 - DQ8	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (5 V)
VSS	Ground (0 V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.

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¡ Semiconductor MSM5117800C

BLOCK DIAGRAM

	Timing			WE	OE
RAS
	Generator
					I/O		8	Output	8
CAS					Controller			Buffers
									DQ1 - DQ8
	10	Column		10	Column Decoders			Input
		Address					8		8
		Buffers						Buffers
		Internal		Sense Amplifiers 8		I/O	8
A0 - A9			Refresh			Selector
		Address
		Counter	Control Clock
	10	Row	Row		Memory
		Address 11
A10R			Deco-	Word
	1	Buffers	ders	Drivers	Cells

VCC

On Chip

VBB Generator

On Chip

IVCC Generator

VSS

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¡ Semiconductor MSM5117800C

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

	Parameter	Symbol			Rating			Unit
	Voltage on Any Pin Relative to VSS	VIN,VOUT		–0.5 to VCC + 0.5				V
	Voltage on VCC Supply Relative to VSS	VCC			–0.5 to 7			V
	Short Circuit Output Current	IOS		50				mA
	Power Dissipation	PD*		1				W
	Operating Temperature	Topr			0 to 70			°C
	Storage Temperature	Tstg			–55 to 150			°C
		*: Ta = 25°C
Recommended Operating Conditions							(Ta = 0°C to 70°C)
	Parameter	Symbol	Min.		Typ.		Max.	Unit
	Power Supply Voltage	VCC	4.5		5.0		5.5	V
		VSS	0		0		0	V
	Input High Voltage	VIH	2.4		—		VCC + 0.5*1	V
	Input Low Voltage	VIL	–0.5*2		—		0.8	V

Notes : *1. TheinputvoltageisVCC +2.0Vwhenthepulsewidthislessthan20ns(thepulsewidth is with respect to the point at which VCC is applied).

*2. TheinputvoltageisVSS –2.0Vwhenthepulsewidthislessthan20ns(thepulsewidth is with respect to the point at which VSS is applied).

Capacitance

(VCC = 5 V ±10%, Ta = 25°C, f = 1 MHz)

Parameter	Symbol	Typ.	Max.	Unit
Input Capacitance (A0 - A9, A10R)	CIN1	—	5	pF
Input Capacitance (RAS, CAS, WE, OE)	CIN2	—	7	pF
Output Capacitance (DQ1 - DQ8)	CI/O	—	7	pF

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	¡ Semiconductor								MSM5117800C
	DC Characteristics						(VCC = 5 V ±10%, Ta = 0°C to 70°C)
				MSM5117800		MSM5117800		MSM5117800
	Parameter	Symbol	Condition	C-50		C-60		C-70		Unit	Note
				Min.	Max.	Min.	Max.	Min.	Max.
	Output High Voltage	VOH	IOH = –5.0 mA	2.4	VCC	2.4	VCC	2.4	VCC	V
	Output Low Voltage	VOL	IOL = 4.2 mA	0	0.4	0	0.4	0	0.4	V
			0 V £ VI £ 6.5 V;
	Input Leakage Current	ILI	All other pins not	–10	10	–10	10	–10	10	mA
			under test = 0 V
	Output Leakage Current	ILO	DQ disable	–10	10	–10	10	–10	10	mA
			0 V £ VO £ VCC
	Average Power		RAS, CAS cycling,
	Supply Current	ICC1		—	120	—	110	—	100	mA	1, 2
			tRC = Min.
	(Operating)
	Power Supply		RAS, CAS = VIH	—	2	—	2	—	2
		ICC2	RAS, CAS							mA	1
	Current (Standby)			—	1	—	1	—	1
			³ VCC –0.2 V
	Average Power		RAS cycling,
	Supply Current	ICC3	CAS = VIH,	—	120	—	110	—	100	mA	1, 2
	(RAS-only Refresh)		tRC = Min.
	Power Supply		RAS = VIH,
		ICC5	CAS = VIL,	—	5	—	5	—	5	mA	1
	Current (Standby)
			DQ = enable
	Average Power		RAS cycling,
	Supply Current	ICC6		—	120	—	110	—	100	mA	1, 2
			CAS before RAS
	(CAS before RAS Refresh)
	Average Power		RAS = VIL,
	Supply Current	ICC7	CAS cycling,	—	110	—	100	—	90	mA	1, 3
	(Fast Page Mode)		tPC = Min.

Notes : 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

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