OKI MSM511000CL-60ZS, MSM511000CL-70JS, MSM511000CL-50ZS, MSM511000C-70ZS, MSM511000CL-45JS Datasheet

E2G0009-17-41

This version: Jan. 1998

¡SemiconductorSemiconductor MSM511000C/CL

Previous version: May 1997

MSM511000C/CL

1,048,576-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM511000C/CL is a 1,048,576-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM511000C/CL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer metal CMOS process. The MSM511000C/CL is available in a 26/20-pin plastic SOJ or 20-pin plastic ZIP. The MSM511000CL (the low-power version) is specially designed for lowerpower applications.

FEATURES

•1,048,576-word ¥ 1-bit configuration

•Single 5 V power supply, ±10% tolerance

• Input : TTL compatible, low input capacitance

•Output : TTL compatible, 3-state

•Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version)

•Fast page mode, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•Package options:

26/20-pin 300 mil plastic SOJ	(SOJ26/20-P-300-1.27)	(Product : MSM511000C/CL-xxJS)
20-pin 400 mil plastic ZIP	(ZIP20-P-400-1.27)	(Product : MSM511000C/CL-xxZS)
		xx indicates speed rank.

PRODUCT FAMILY

	Family	Access Time (Max.)			Cycle Time	Power Dissipation
					(Min.)
		tRAC	tAA	tCAC		Operating (Max.)	Standby (Max.)
	MSM511000C/CL-45	45 ns	24 ns	14 ns	90 ns	468 mW
	MSM511000C/CL-50	50 ns	26 ns	14 ns	100 ns	440 mW	5.5 mW/
	MSM511000C/CL-60	60 ns	30 ns	15 ns	120 ns	385 mW	1.1 mW (L-version)
	MSM511000C/CL-70	70 ns	35 ns	20 ns	130 ns	330 mW

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¡ Semiconductor

MSM511000C/CL

	PIN CONFIGURATION (TOP VIEW)
	DIN	1	26	VSS	A9	1	2	CAS
	WE 2		25	DOUT	DOUT	3
							4	VSS
	RAS	3	24	CAS	DIN	5
							6	WE
	NC	4	23	NC	RAS	7
							8	NC
	NC	5	22	A9	NC	9
							NO LEAD
					A0	11
							12	A1
	A0	9	18	A8	A2	13
							14	A3
	A1	10	17	A7	VCC	15
							16	A4
	A2	11	16	A6	A5	17
							18	A6
	A3	12	15	A5	A7	19
							20	A8
	VCC 13		14	A4
		26/20-Pin Plastic SOJ			20-Pin Plastic ZIP

Pin Name	Function
A0 - A9	Address Input
RAS	Row Address Strobe
CAS	Column Address Strobe
DIN	Data Input
DOUT	Data Output
WE	Write Enable
VCC	Power Supply (5 V)
VSS	Ground (0 V)
NC	No Connection

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¡ Semiconductor MSM511000C/CL

BLOCK DIAGRAM

RAS

Timing

Generator

Timing

CAS

Generator

Column

Write

WE

10

10

Column

Clock

Address

Decoders

Generator

Buffers

A0 - A9

Internal

Refresh

Sense

I/O

Output

DOUT

Address

Selector

Counter

Control Clock

Amplifiers

Buffer

Row

Row

10

Address

10

Word

Memory

Buffers

De-

Drivers

Cells

Input

DIN

coders

Buffer

VCC

On Chip

VBB Generator

VSS

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¡ Semiconductor MSM511000C/CL

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

	Parameter	Symbol		Rating			Unit
	Voltage on Any Pin Relative to VSS	VT		–1.0 to 7.0			V
	Short Circuit Output Current	IOS		50			mA
	Power Dissipation	PD*		1			W
	Operating Temperature	Topr		0 to 70			°C
	Storage Temperature	Tstg		–55 to 150			°C
		*: Ta = 25°C
Recommended Operating Conditions						(Ta = 0°C to 70°C)
	Parameter	Symbol	Min.	Typ.	Max.		Unit
	Power Supply Voltage	VCC	4.5	5.0	5.5		V
		VSS	0	0	0		V
	Input High Voltage	VIH	2.4	—	6.5		V
	Input Low Voltage	VIL	–1.0	—	0.8		V

Capacitance				(VCC = 5 V ±10%, Ta = 25°C, f = 1 MHz)
	Parameter	Symbol	Typ.		Max.	Unit
	Input Capacitance (A0 - A9, DIN)	CIN1	—		5	pF
	Input Capacitance (RAS, CAS, WE)	CIN2	—		5	pF
	Output Capacitance (DOUT)	COUT	—		6	pF

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	DC Characteristics							(VCC = 5 V ±10%, Ta = 0°C to 70°C)
				MSM511000		MSM511000		MSM511000		MSM511000
	Parameter	Symbol	Condition	C/CL-45		C/CL-50		C/CL-60		C/CL-70		Unit	Note
				Min.	Max.	Min.	Max.	Min.	Max.	Min.	Max.
	Output High Voltage	VOH	IOH = –5.0 mA	2.4	VCC	2.4	VCC	2.4	VCC	2.4	VCC	V
	Output Low Voltage	VOL	IOL = 4.2 mA	0	0.4	0	0.4	0	0.4	0	0.4	V
			0 V £ VI £ 6.5 V;
	Input Leakage Current	ILI	All other pins not	–10	10	–10	10	–10	10	–10	10	mA
			under test = 0 V
	Output Leakage Current	ILO	DOUT disable	–10	10	–10	10	–10	10	–10	10	mA
			0 V £ VO £ 5.5 V
	Average Power		RAS, CAS cycling,
	Supply Current	ICC1		—	85	—	80	—	70	—	60	mA	1, 2
			tRC = Min.
	(Operating)
	Power Supply		RAS, CAS = VIH	—	2	—	2	—	2	—	2	mA	1
		ICC2	RAS, CAS	—	1	—	1	—	1	—	1
	Current (Standby)
			³ VCC –0.2 V	—	200	—	200	—	200	—	200	mA	1, 5
	Average Power		RAS cycling,
	Supply Current	ICC3	CAS = VIH,	—	85	—	80	—	70	—	60	mA	1, 2
	(RAS-only Refresh)		tRC = Min.
	Power Supply		RAS = VIH,
		ICC5	CAS = VIL,	—	5	—	5	—	5	—	5	mA	1
	Current (Standby)
			DOUT = enable
	Average Power		RAS cycling,
	Supply Current	ICC6		—	85	—	80	—	70	—	60	mA	1, 2
			CAS before RAS
	(CAS before RAS Refresh)
	Average Power		RAS = VIL,
	Supply Current	ICC7	CAS cycling,	—	80	—	75	—	65	—	55	mA	1, 3
	(Fast Page Mode)		tPC = Min.
	Average Power		tRC = 125 ms,										1, 4,
	Supply Current	ICC10	CAS before RAS,	—	300	—	300	—	300	—	300	mA
													5
	(Battery Backup)		tRAS £ 1 ms

Notes : 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

4.VCC – 0.2 V £ VIH £ 6.5 V, –1.0 V £ VIL £ 0.2 V.

5.L-version.

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