OKI MSM5117405D-60TS-K, MSM5117405D-50TS-L, MSM5117405D-70TS-K, MSM5117405D-60TS-L, MSM5117405D-60SJ Datasheet

Semiconductor

This version:Apr.1999

MSM5117405D

4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MSM5117405D is a 4,194,304-word ´ 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117405D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5117405D is available in a 26/24-pin plastic SOJ, 26/24-pin plastic TSOP.

FEATURES

·4,194,304-word ´ 4-bit configuration

·Single 5V power supply, ±10% tolerance

·	Input	: TTL compatible, low input capacitance
·	Output	: TTL compatible, 3-state
·	Refresh	: 2048 cycles/32 ms

·Fast page mode, read modify write capability

·CAS before RAS refresh, hidden refresh, RAS-only refresh capability

·Multi-bit test mode capability

·Package options:

26/24-pin 300mil plastic SOJ	(SOJ26/24-P-300-1.27)	(Product : MSM5117405D-xxSJ)
26/24-pin 300mil plastic TSOP	(TSOPII26/24-P-300-1.27-K)	(Product : MSM5117405D-xxTS-K)
	(TSOPII26/24-P-300-1.27-L)	(Product : MSM5117405D-xxTS-L)
		xx : indicates speed rank.

PRODUCT FAMILY

Family		Access Time (Max.)					Cycle Time	Power Dissipation
	tRAC		tAA	tCAC		tOEA	(Min.)	Operating (Max.)	Standby (Max.)
MSM5117405D-50	50ns		25ns	13ns		13ns	84ns	550mW
MSM5117405D-60	60ns		30ns	15ns		15ns	104ns	495mW	5.5mW
MSM5117405D-70	70ns		35ns	20ns		20ns	124ns	440mW

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PIN CONFIGRATION (TOP VIEW)

VCC	1	26	VSS	VCC	1
DQ1 2		25	DQ4	DQ1 2
DQ2 3		24	DQ3	DQ2 3
WE 4		23 CAS		WE 4
RAS 5		22	OE	RAS 5
NC 6		21	A9	NC 6
A10	8	19	A8	A10	8
A0	9	18	A7	A0	9
A1	10	17	A6	A1	10
A2	11	16	A5	A2	11
A3	12	15	A4	A3	12
VCC 13		14	VSS	VCC 13

MSM5117405D

26		VSS			VSS 26		1	VCC
		DQ4			DQ4 25			DQ1
25							2
		DQ3			DQ3 24			DQ2
24							3
					CAS 23
23		CAS					4	WE
					OE 22
22		OE					5	RAS
		A9			A9 21			NC
21							6
		A8			A8 19			A10
19							8
		A7			A7 18			A0
18							9
		A6			A6 17			A1
17							10
		A5			A5 16			A2
16							11
		A4			A4 15			A3
15							12
		VSS			VSS 14			VCC
14							13

26/24-Pin Plastic SOJ	26/24-Pin Plastic TSOP	26/24-Pin Plastic TSOP
	(K Type)	(L Type)

Pin Name							Function
A0 – A10							Address Input
							Row Address Strobe
	RAS
							Column Address Strobe
	CAS
DQ1 – DQ4							Data Input/Data Output
							Output Enable
		OE
							Write Enable
	WE
	VCC						Power Supply (5V)
	VSS						Ground (0V)
		NC					No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same

GND voltage level must be provided to every VSS pin.

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MSM5117405D

BLOCK DIAGRAM

RAS	Timing
	Generator
					Timing
CAS					Generator
					Write		WE
	Column				Clock			OE
11					Generator
	Address	11	Column Decoders
	Buffers					4	Output	4
							Buffers
	Internal	Refresh	Sense Amplifiers	4	I/O	4		4	DQ1 - DQ4
A0 – A10					Selector
	Address	Control Clock
							Input
	Counter
						4		4
							Buffers

11	Row	11	Row
	Address					Word			Memory
	Buffers		Deco-
			ders			Drivers			Cells

VCC

On Chip

VBB Generator

On Chip

IVCC Generator

VSS

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MSM5117405D

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter	Symbol	Rating	Unit
Voltage on Any Pin Relative to VSS	VIN, VOUT	-0.5 to VCC + 0.5	V
Voltage VCC supply Relative to VSS	VCC	-0.5 to 7.0	V
Short Circuit Output Current	IOS	50	mA
Power Dissipation	PD*	1	W
Operating Temperature	Topr	0 to 70	°C
Storage Temperature	Tstg	-55 to 150	°C

*: Ta = 25°C

Recommended Operating Conditions

(Ta = 0°C to 70°C)

	Parameter	Symbol	Min.	Typ.	Max.	Unit
	Power Supply Voltage	VCC	4.5	5.0	5.5	V
		VSS	0	0	0	V
	Input High Voltage	VIH	2.4	¾	VCC + 0.5*1	V
	Input Low Voltage	VIL	-0.5*2	¾	0.8	V

Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied).

*2. The input voltage is VSS - 2.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied).

Capacitance

(VCC = 5V ± 10%, Ta = 25°C, f=1MHz)

Parameter

Symbol

Typ.

Max.

Unit

Input Capacitance (A0 – A10)

CIN1

¾

5

pF

Input Capacitance

CIN2

¾

7

pF

(RAS, CAS, WE, OE)

Output Capacitance (DQ1 – DQ4)

CI/O

¾

7

pF

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MSM5117405D

DC Characteristics

(VCC = 5V ± 10%, Ta = 0°C to 70°C)

MSM5117405

MSM5117405

MSM5117405

Parameter

Symbol

Condition

D-50

D-60

D-70

Unit

Note

Min.

Max

Min.

Max

Min.

Max

Output High Voltage

VOH

IOH = -5.0mA

2.4

VCC

2.4

VCC

2.4

VCC

V

Output Low Voltage

VOL

IOL = 4.2mA

0

0.4

0

0.4

0

0.4

V

Input Leakage

0V £ VI £ 6.5V ;

ILI

All other pins not

-10

10

-10

10

-10

10

mA

Current

under test = 0V

Output Leakage

ILO

DQ disable

-10

10

-10

10

-10

10

mA

Current

0V £ VO £ VCC

Average Power

RAS, CAS cycling,

Supply Current

ICC1

¾

100

¾

90

¾

80

mA

1,2

tRC = Min.

(Operating)

= VIH

¾

2

¾

2

¾

2

Power Supply

RAS,

CAS

Current

ICC2

mA

1

RAS,

CAS

³

¾

1

¾

1

¾

1

(Standby)

VCC – 0.2V

cycling,

Average Power

RAS

Supply Current

ICC3

CAS

= VIH,

¾

100

¾

90

¾

80

mA

1,2

(RAS

-only Refresh)

tRC = Min.

= VIH,

Power Supply

RAS

Current

ICC5

= VIL,

¾

5

¾

5

¾

5

mA

1

CAS

(Standby)

DQ = enable

Average Power

= cycling,

Supply Current

ICC6

RAS

¾

100

¾

90

¾

80

mA

1,2

(CAS before RAS

CAS before RAS

Refresh)

= VIL,

Average Power

RAS

Supply Current

ICC7

cycling,

¾

100

¾

90

¾

80

mA

1,3

CAS

(Fast Page Mode)

tPC = Min.

Notes: 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

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