OKI MSM5117405B-60TS-K, MSM5117405B-50TS-K, MSM5117405B-70TS-L, MSM5117405B-60TS-L, MSM5117405B-50TS-L Datasheet

231

¡ Semiconductor MSM5117405B

DESCRIPTION

The MSM5117405B is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

technology. The MSM5117405B achieves high integration, high-speed operation, and low-power

consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

metal CMOS process. The MSM5117405B is available in a 26/24-pin plastic SOJ or 26/24-pin plastic

TSOP.

FEATURES

• 4,194,304-word ¥ 4-bit configuration

• Single 5 V power supply, ±10% tolerance

• Input : TTL compatible, low input capacitance

• Output : TTL compatible, 3-state

• Refresh : 2048 cycles/32 ms

• Fast page mode with EDO, read modify write capability

• CAS before RAS refresh, hidden refresh, RAS-only refresh capability

• Multi-bit test mode capability

• Package options:

26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5117405B-xxSJ)

26/24-pin 300 mil plastic TSOP

(TSOPII26/24-P-300-1.27-K)

(Product : MSM5117405B-xxTS-K)

(TSOPII26/24-P-300-1.27-L)

(Product : MSM5117405B-xxTS-L)

xx indicates speed rank.

PRODUCT FAMILY

¡ Semiconductor

MSM5117405B

4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

MSM5117405B-70

70 ns

130 ns

90 ns

550 mW

660 mW

Family

Access Time (Max.)

Cycle Time

(Min.)

Standby (Max.)

Power Dissipation

MSM5117405B-50

t

RAC

50 ns

35 ns

t

AA

25 ns

20 ns

t

CAC

13 ns

20 ns

t

OEA

13 ns

MSM5117405B-60

60 ns

110 ns 605 mW

30 ns 15 ns 15 ns

Operating (Max.)

5.5 mW

E2G0039-17-41

232

MSM5117405B ¡ Semiconductor

PIN CONFIGURATION (TOP VIEW)

26/24-Pin Plastic SOJ 26/24-Pin Plastic TSOP

(K Type)

26/24-Pin Plastic TSOP

(L Type)

Pin Name Function

A0 - A10

Address Input

RAS Row Address Strobe

CAS Column Address Strobe

DQ1 - DQ4 Data Input/Data Output

OE Output Enable

WE Write Enable

V

CC

Power Supply (5 V)

V

SS

Ground (0 V)

3

4

5

9

10

11

12

13

DQ2

A0

A1

A2

A3

V

CC

24

23

22

18

17

16

15

14

DQ3

A7

A6

A5

A4

V

SS

2DQ1 25 DQ4

1

V

CC

26 V

SS

3

4

5

9

10

11

12

13

24

23

22

18

17

16

15

14

2

25

1

26

24

23

22

18

17

16

15

14

3

4

5

9

10

11

12

13

25

2

26

1

6NC 21 A9 21 21 6

8A10 19 A8 19 19 8

6

8

DQ2

A0

A1

A2

A3

V

CC

DQ1

V

CC

NC

A10

DQ3

A7

A6

A5

A4

V

SS

DQ4

V

SS

A9

A8

DQ3

A7

A6

A5

A4

V

SS

DQ4

V

SS

A9

A8

DQ2

A0

A1

A2

A3

V

CC

DQ1

V

CC

NC

A10

WE CAS WE CAS CAS WE

RAS OE RAS OE OE RAS

NC No Connection

Note : The same power supply voltage must be provided to every V

CC

pin, and the same GND

voltage level must be provided to every V

SS

pin.

233

¡ Semiconductor MSM5117405B

BLOCK DIAGRAM

Timing

Generator

RAS

CAS

Timing

Generator

Internal

Address

Counter

Row

Address

Buffers

Row

De-

coders

Word

Drivers

Memory

Cells

Refresh

Control Clock

Sense

Amplifiers

Column

Decoders

Write

Clock

Generator

I/O

Selector

Output

Buffers

WE

OE

4

DQ1 - DQ4

4

4

4

4

4

Input

Buffers

4

11

A0 - A10

11

1111

Column

Address

Buffers

V

CC

V

SS

On Chip

IV

CC

Generator

On Chip

V

BB

Generator