OKI MSM5116400B-70TS-K, MSM5116400B-60TS-K, MSM5116400B-50TS-L, MSM5116400B-70TS-L, MSM5116400B-60TS-L Datasheet

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	Semiconductor	MSM5116400B

MSM5116400B

4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM5116400B is a 4,194,304-word ´ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5116400B is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP.

FEATURES

•4,194,304-word ´ 4-bit configuration

•Single 5 V power supply, ±10% tolerance

• Input : TTL compatible, low input capacitance

•Output : TTL compatible, 3-state

•Refresh : 4096 cycles/64 ms

•Fast page mode, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•Multi-bit test mode capability

•Package options:

26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5116400B-xxSJ) 26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5116400B-xxTS-K)

(TSOPII26/24-P-300-1.27-L) (Product : MSM5116400B-xxTS-L) xx indicates speed rank.

PRODUCT FAMILY

	Family	Access Time (Max.)				Cycle Time	Power Dissipation
						(Min.)
		tRAC	tAA	tCAC	tOEA		Operating (Max.)	Standby (Max.)
	MSM5116400B-50	50 ns	25 ns	13 ns	13 ns	90 ns	550 mW
	MSM5116400B-60	60 ns	30 ns	15 ns	15 ns	110 ns	495 mW	5.5 mW
	MSM5116400B-70	70 ns	35 ns	20 ns	20 ns	130 ns	440 mW

16M

207

MSM5116400B

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PIN CONFIGURATION (TOP VIEW)
VCC	1	26	VSS	VCC	1	26	VSS
DQ1	2	25	DQ4	DQ1	2	25	DQ4
DQ2	3	24	DQ3	DQ2	3	24	DQ3
WE 4		23	CAS	WE 4		23	CAS
RAS	5	22	OE	RAS	5	22	OE
A11R	6	21	A9	A11R	6	21	A9
A10R	8	19	A8	A10R	8	19	A8
A0	9	18	A7	A0	9	18	A7
A1	10	17	A6	A1	10	17	A6
A2	11	16	A5	A2	11	16	A5
A3	12	15	A4	A3	12	15	A4
VCC 13		14	VSS	VCC 13		14	VSS
	26/24-Pin Plastic SOJ				26/24-Pin Plastic TSOP
						(K Type)

VSS	26		1	VCC
DQ4	25		2	DQ1
DQ3				DQ2
	24		3
CAS				WE
	23		4
OE				RAS
	22		5
A9				A11R
	21		6
A8				A10R
	19		8
A7				A0
	18		9
A6				A1
	17		10
A5				A2
	16		11
A4				A3
	15		12
VSS	14		13	VCC

26/24-Pin Plastic TSOP

(L Type)

			Pin Name	Function
			A0 - A9,	Address Input
			A10R, A11R
			RAS	Row Address Strobe
			CAS	Column Address Strobe
			DQ1 - DQ4	Data Input/Data Output
			OE	Output Enable
			WE	Write Enable
			VCC	Power Supply (5 V)
			VSS	Ground (0 V)
	Note :	The same power supply voltage must be provided to every VCC pin, and the same GND
		voltage level must be provided to every VSS pin.
16M

208

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MSM5116400B

BLOCK DIAGRAM

		RAS			Timing
				Generator
									Timing
		CAS						Generator
			Column						Write
							Column		Clock	WE
	10 Address					10	Decoders		Generator		OE
			Buffers
									4	Output	4
										Buffers
			Internal		Refresh				I/O
A0 - A9							Sense
			Address					4			4 DQ1 - DQ4
					Control Clock		Amplifiers		4
			Counter						Selector	Input
									4		4
										Buffers
	10		Row		Row
						Word	Memory
			Address	12
					De-
						Drivers	Cells
			Buffers
A10R, A11R	2				coders

VCC

On Chip

VBB Generator

On Chip

IVCC Generator

VSS

16M

209