DYNEX MF34-800, MF34-1000, MF34-1200, MF34-1400, MF34-1600 Datasheet

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MF34

MF34

Fast Recovery Diode

Replaces March 1998 version, DS4624-2.1

DS4624-3.0 January 2000

APPLICATIONS

Inverse, Parallel Or Series Connected Diode

Power Supplies

High Frequency Applications

FEATURES

Glass Passivation

High Voltage Capability

Fast Recovery Characteristics

VOLTAGE RATINGS

Type Number

Repetitive Peak

Conditions

 

Reverse Voltage

 

 

VRRM

 

 

V

 

 

 

 

MF34 - 1600

1600

VRSM = VRRM +100V

MF34 -1400

1400

 

MF34 - 1200

1200

 

MF34 -1000

1000

 

MF34 - 800

800

 

 

 

 

Lower voltage grades available.

For stud anode add suffix 'R' to type number. e.g. MF34-1600R.

KEY PARAMETERS

 

 

 

 

 

VRRM

1600V

 

 

 

 

 

IF(AV)

40A

 

 

 

 

 

IFSM

400A

 

 

 

 

 

Qr

25μC

 

 

 

 

 

trr

0.25ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Outline type code: DO5.

See Package Details for further information.

CURRENT RATINGS

Symbol

Parameter

 

 

Conditions

 

 

Max.

Units

 

 

 

 

 

 

 

I

Mean forward current

Half sine wave resistive load, T

case

= 65oC

40

A

F(AV)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

RMS value

T

case

= 65oC

 

 

63

A

F(RMS)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

Continuous (direct) forward current

T

case

= 65oC

 

 

50

A

F

 

 

 

 

 

 

 

1/7

MF34

SURGE RATINGS

Symbol

Parameter

Conditions

 

Max.

Units

 

 

 

 

 

 

 

 

I

Surge (non-repetitive) forward current

10ms half sine; with V

RRM

10V, T

= 125oC

400

A

FSM

 

 

j

 

 

 

 

 

 

 

 

 

I2t

I2t for fusing

10ms half sine; Tj = 125oC

 

800

A2s

 

 

 

 

 

 

 

 

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Conditions

Min.

Max.

Units

 

 

 

 

 

 

Rth(j-c)

Thermal resistance - junction to case

dc

-

0.8

oC/W

Rth(c-h)

Thermal resistance - case to heatsink

Mounting torque 3.5Nm

-

0.2

o

with mounting compound

C/W

 

 

 

 

 

 

 

 

 

 

 

Tvj

 

Forward (conducting)

-

125

oC

Virtual junction temperature

 

 

 

 

Reverse (blocking)

-

125

oC

 

 

 

 

 

 

 

 

Tstg

Storage temperature range

 

-55

125

˚C

-

Mounting torque

 

3.5

4.0

Nm

 

 

 

 

 

 

CHARACTERISTICS

Symbol

Parameter

 

 

Conditions

 

 

Typ.

Max.

Units

 

 

 

 

 

 

 

 

VFM

Forward voltage

At 120A peak, Tcase = 25oC

 

 

-

2.0

V

I

Peak reverse current

At V

RRM

, T = 100oC

 

 

-

5

mA

RM

 

 

case

 

 

 

 

 

 

 

 

 

 

 

 

trr

Reverse recovery time

IF = 1A, diRR/dt = 25A/μs, Tcase

= 25˚C,

-

250

ns

VR = 100V

 

 

 

 

 

 

 

 

 

QR

Recovered charge

IF = 50A, diRR/dt = 50A/μs, Tcase

= 25˚C,

-

25

μC

VR = 100V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTO

Threshold voltage

At Tvj = 125oC

 

 

-

1.2

V

rT

Slope resistance

At Tvj = 125oC

 

 

-

7.0

mΩ

 

 

 

 

 

 

 

 

 

 

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DYNEX MF34-800, MF34-1000, MF34-1200, MF34-1400, MF34-1600 Datasheet

MF34

CURVES

Instantaneous forward current - (A)

200

Measured under pulse conditions

150 Tj = 25˚C

Tj = 125˚C

100

50

0

0

1.0

2.0

3.0

 

Instantaneous forward voltage - (V)

 

Fig.1 Maximum (limit) forward characteristics

(A)

400

 

 

Tcase = 125˚C

 

-

 

 

 

 

 

 

- ˚C/W

current

350

 

 

VR

= VRRM

sinewavehalfPeak forward

1

2

3 4 5

10

50

Thermalimpedance

 

300

 

 

 

 

 

 

250

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

Cycles at 50Hz

 

 

 

 

 

Duration

 

 

 

1.00

0.75

0.50

0.25

0

0.001

d.c.

0.01

0.1

1.0

10

 

Time -

(s)

 

Fig.2 Surge (non-repetitive) forward current vs time

Fig.3 Maximum transient thermal impedance

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