MP02TT800
MP02TT800
Dual Thyristor Water Cooled Welding Module
Preliminary Information
DS5435-1.1 June 2001
FEATURES |
KEY PARAMETERS |
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■ Dual Device Module |
VDRM |
1600V |
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■ Electrically Isolated Package |
ILINE(cont.) |
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510A |
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ILINE(20cy./50%) |
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805A |
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■ Pressure Contact Construction |
ITSM(per arm) |
6800A |
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■ International Standard Footprint |
Visol |
3000V |
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■ Alumina (Non Toxic) Isolation Medium |
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G1 K1 |
K2 G2 |
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■ Integral Water Cooled Heatsink |
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1 |
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3 |
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APPLICATIONS |
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■ Welding |
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Fig. 1 Circuit diagram |
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VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Voltages |
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VDRM VRRM |
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V |
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MP02TT800-16 |
1600 |
Tvj = 0˚ to 125˚C, |
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MP02TT800-15 |
1500 |
IDRM = IRRM = 30mA |
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MP02TT800-14 |
1400 |
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VDSM = VRSM = |
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MP02TT800-13 |
1300 |
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VDRM = VRRM + 100V |
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respectively |
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Lower voltage grades available |
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ORDERING INFORMATION
Order As: |
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MP02TT800-XX W12 |
1/4 - 18NPT |
MP02TT800-XX W13 |
1/4 BSP connection |
XX shown in the part number about represents VDRM/100 selection required, e.g. MP02TT800-14-W12
Note: When ordering, please use the whole part number.
Auxiliary gate and cathode leads can be ordered separately.
K2 G2
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1 |
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3 |
K1 G1 |
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Outline type code: MP02 W12/W13
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
1/8
www.dynexsemi.com
MP02TT800
ABSOLUTE MAXIMUM CURRENT RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
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ILINE |
Max. controllable RMS line |
Continuous 50/60Hz |
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Twater (in) = 25˚C |
510 |
A |
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current - single phase |
4.5 Ltr/min |
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Twater (in) = 40˚C |
450 |
A |
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20 cycles, 50% duty cycle |
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Twater (in) = 25˚C |
920 |
A |
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4.5 Ltr/min |
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Twater (in) = 40˚C |
805 |
A |
ITSM |
Surge (non-repetitive) on-current |
10ms half sine, Tj = 125˚C |
6.8 |
kA |
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I2t |
I2t for fusing |
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VR = 0 |
0.231 x 106 |
A2s |
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ITSM |
Surge (non-repetitive) on-current |
10ms half sine, Tj = 125˚C |
5.5 |
kA |
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I2t |
I2t for fusing |
V |
R |
= 50% V |
0.15 x 106 |
A2s |
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DRM |
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Visol |
Isolation voltage |
Commoned terminals to base plate. |
3000 |
V |
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AC RMS, 1 min, 50Hz |
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THERMAL AND MECHANICAL RATINGS
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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Rth(j-c) |
Thermal resistance - junction to water |
dc, 4.5 Ltr/min |
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0.3 |
˚C/kW |
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(per thyristor) |
Half wave, 4.5 Ltr/min |
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0.32 |
˚C/kW |
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3 Phase, 4.5 Ltr/min |
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0.33 |
˚C/kW |
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Tvj |
Virtual junction temperature |
Reverse (blocking) |
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125 |
˚C |
Tstg |
Storage temperature range |
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–40 |
125 |
˚C |
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Screw torque |
Mounting - M6 |
5 (44) |
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Nm (lb.ins) |
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Electrical connections - M6 |
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5 (44) |
Nm (lb.ins) |
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Weight (nominal) |
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1200 |
g |
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2/8
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MP02TT800
DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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IRRM/IDRM |
Peak reverse and off-state current |
At VRRM/VDRM, Tj = 125˚C |
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30 |
mA |
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dV/dt |
Linear rate of rise of off-state voltage |
To 67% VDRM, Tj = 125˚C |
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1000 |
V/µ |
s |
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dI/dt |
Rate of rise of on-state current |
From 67% VDRM to 200A, gate source 10V, 5Ω |
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500 |
A/µ |
s |
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tr = 0.5µ s, Tj = 125˚C |
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VT(TO) |
Threshold voltage |
At Tvj = 125˚C |
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0.98 |
V |
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rT |
On-state slope resistance |
At Tvj = 125˚C |
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0.75 |
mΩ |
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Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol |
Parameter |
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Test Conditions |
Max. |
Units |
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V |
GT |
Gate trigger voltage |
V |
= 5V, T |
case |
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= 25oC |
3 |
V |
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DRM |
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I |
GT |
Gate trigger current |
V |
= 5V, T |
case |
= 25oC |
150 |
mA |
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DRM |
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VGD |
Gate non-trigger voltage |
At VDRM Tcase = 125oC |
0.25 |
V |
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VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
30 |
V |
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VFGN |
Peak forward gate voltage |
Anode negative with respect to cathode |
0.25 |
V |
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VRGM |
Peak reverse gate voltage |
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- |
5 |
V |
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IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
10 |
A |
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PGM |
Peak gate power |
See table fig. 5 |
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100 |
W |
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PG(AV) |
Mean gate power |
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5 |
W |
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3/8
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