MP04DD810
MP04DD810
Dual Rectifier Diode Water Cooled Module
Preliminary Information
DS5286-2.1 June 2001
FEATURES |
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KEY PARAMETERS |
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■ Dual Device Module |
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VRRM |
3000V |
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■ Electrically Isolated Package |
IF(AV) |
812A |
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■ Pressure Contact Construction |
IFSM (per arm) |
20000A |
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■ International Standard Footprint |
IF(RMS) |
1276A |
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Visol |
3000V |
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■ Alumina (Non-toxic) Isolation Medium |
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APPLICATIONS |
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■ Power Supplies |
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1 |
2 |
3 |
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■ Large IGBT Circuit 'Front Ends' |
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■ Rectifiers |
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■ Battery Chargers |
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Fig.1 DD circuit configuration |
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VOLTAGE RATINGS |
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Type Number Repetitive Peak |
Conditions |
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Voltages |
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VDRM VRRM |
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V |
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MP04DD810-30 |
3000 |
Tvj = –40˚ to 150˚C, |
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MP04DD810-28 |
2800 |
VRSM = VRRM + 100V |
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MP04DD810-26 |
2600 |
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MP04DD810-24 |
2400 |
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Lower voltage grades available |
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Module outline type code: |
Module outline type code: |
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ORDERING INFORMATION |
MP04-W3 |
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MP04-W3A |
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Order As: |
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MP04DD810-XX-W2 |
1/4 - 18 NPT connection |
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MP04DD810-XX-W3 |
1/4 - 18 NPT connection |
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MP04DD810-XX-W3A |
1/4 - 18 NPT water connection |
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thread |
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XX shown in the part number about represents VDRM/100 selection required, eg. MP04DD810-28-W2
Note: When ordering, please use the complete part number.
Please quote full part number in all correspondance.
Module outline type code: MP04-W2 (See Package Details for further information)
Fig. 2 Module package variants - (not to scale)
1/9
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MP04DD810
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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IF(AV) |
Mean forward current |
Half wave resistive load |
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Twater (in) = 25oC |
885 |
A |
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4.5 Ltr/min |
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Twater (in) = 40oC |
812 |
A |
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I |
RMS value |
T |
water (in) |
= 25oC, 4.5 Ltr/min |
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1392 |
A |
F(RMS) |
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Twater (in) = 40oC, 4.5 Ltr/min |
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1276 |
A |
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IFSM |
Surge (non-repetitive) forward current |
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10ms half sine; |
Tj = 150oC |
20 |
kA |
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I2t |
I2t for fusing |
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VR = 0 |
2.0 x 106 |
A2s |
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IFSM |
Surge (non-repetitive) forward current |
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10ms half sine; |
Tj = 150oC |
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16 |
kA |
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I2t |
I2t for fusing |
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VR = 50% VRRM |
1.28 x 106 |
A2s |
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Visol |
Isolation voltage |
Commoned terminals to base plate AC RMS, 1 min, 50Hz |
3000 |
V |
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THERMAL AND MECHANICAL DATA
Symbol |
Parameter |
Conditions |
Min. |
Max. |
Units |
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R |
Thermal resistance - junction to water |
dc, 4.5 Ltr/min |
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0.102 |
oC/W |
th(j-w) |
(per diode) |
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Halfwave, 4.5 Ltr/min |
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0.106 |
oC/W |
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3 Phase, 4.5 Ltr/min |
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0.112 |
oC/W |
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Tvj |
Virtual junction temperature |
Reverse (blocking) |
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150 |
oC |
Tstg |
Storage temperature range |
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–40 |
150 |
oC |
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Screw torque |
Mounting - M6 |
6 (53) |
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Nm (lb.ins) |
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Electrical connections - M10 |
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12 (106) |
Nm (lb.ins) |
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Weight (nominal) |
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Refer to |
g |
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Drawing |
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2/9
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MP04DD810
CHARACTERISTICS
Symbol |
Parameter |
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Conditions |
Min. |
Max. |
Units |
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I |
RRM |
Peak reverse current |
At V , T |
case |
= 150oC |
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50 |
mA |
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RRM |
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QS |
Total stored charge |
IF = 1000A, dIRR/dt = 3A/µ s |
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1600 |
µ C |
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Tcase = 150˚C, VR = 100V |
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IRR |
Peak recovery current |
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85 |
A |
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VTO |
Threshold voltage. See Note 1. |
At Tvj = 150˚C |
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0.7 |
V |
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rT |
Slope resistance. See Note 1. |
At Tvj = 150˚C |
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0.29 |
mΩ |
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Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to the impedance of the busbars from the terminals to the semiconductor.
3/9
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