DYNEX MAS7001NL, MAS7001NE, MAS7001ND, MAS7001NC, MAS7001FS Datasheet

MA7001

Radiation Hard 512x9 Bit FIFO

Replaces June 1999 version, DS3519-4.0

DS3519-5.0 January 2000

The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3μm technology.

The Dynex Semiconductor Silicon-on-Sapphire process provides significant advantages over bulk silicon substrate technologies In addition to very good total dose hardness and neutron hardness >1015n/cm2, the Dynex Semiconductor technology provides very high transient gamma and single event upset performance without compromising speed of operation The Sapphire substrate also eliminates latch-up giving greater flexibility of use in electrically severe environments.

The MA7001 implements a First-ln First-Out algorithm that reads and writes data on a first-in first-out basis. The dual-port static RAM memory is organised as 512 words of 9 bits (8 bit

data and 1 bit for parity or control purposes).

Sequential read and write accesses are achieved using a ring pointer architecture that requires no external addressing information. Data is toggled in and out of the device by using the WRITE (W) and READ (R) pins.

Full and Empty status flags prevent data overflow and underflow. Expansion logic on the device allows for unlimited expansion capability in both word size and depth. A RETRANSMIT (RT) feature allows for reset of the read pointer to its initial position to allow retransmission of data.

The device is designed for applications requiring asynchronous and simultaneous read/write in multiprocessing and rate buffering (sourcing and sinking data at different rates eg. interfacing fast processors and slow peripherals).

FEATURES

■Radiation Hard CMOS-SOS Technology

■Fast Access Time 60ns Typical

■Single 5V Supply

■Inputs Fully TTL and CMOS Compatible

■-55°C to +125°C Operation

Figure 1: Block Diagram

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MA7001

DC CHARACTERISTICS AND RATINGS

Symbol	Parameter	Min.	Max.	Units
VDD	Supply Voltage	-0.5	7.0	V
VIN	Input Voltage	-0.3	VDD+0.3	V
TA	Operating Temperature	-55	125	°C
TS	Storage Temperature	-65	150	°C

Figure 2: Absolute Maximum Ratings

Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions, or at any other condition above those indicated in the operations section of this specification, is not Implied Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The following D.C. and A.C. electrical characteristics apply to pre-radiation at TA = -55°C to +125°C, VDD = 5V ±10% and post 100kRad(Si) total dose radiation at TA = 25°C, VDD = 5V ±10%. GROUP A SUBGROUP 1, 2, 3.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VIH

Input logic '1' voltage

-

2.0

-

-

V

VIL

Input logic '0' voltage

-

-

-

0.8

V

IIL

Input leakage current (any input) (Note 4)

Note 1

-10

-

10

μA

IOL

Output leakage current (Note 4)

Note 2

-50

-

50

μA

VOH

Output logic '1' voltage

lOUT = -1mA

2.4

-

-

V

VOL

Output loglc '0' voltage

lOUT = 2mA

-

-

0.4

V

IDD1

Average VDD power supply current (Note 3)

Freq = 10MHz

-

70

100

mA

IDD2

Average standby current (Note 3)

=

=

=

-

8

15

mA

R

W

RS

FL/RT = VDD/2

IDD3(L)

Powerdown current (Note 3)

All Inputs = VDD -0.2V

-

-

3.0

mA

NOTES:

1.Measurements with VSS ≤ VIN ≤ VDD

2.R > VIH, VSS ≤ VOUT ≤ VDD

3.IDD measurements are made wlth outputs open, VDD = 5.5V

4.Guaranteed but not measured at -55°C

Figure 3a: DC Electrical Characteristics

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MA7001

AC CHARACTERISTICS

Characteristics apply to pre-radiation at TA = -55°C to +125°C, VDD = 5V ±10% and post 100kRad(Si) total dose radiation at TA = 25°C, VDD = 5V ±10%. GROUP A SUBGROUP 9, 10, 11.

Symbol	Parameter	Min.	Max.	Units
tRC	Read Cycle Time	110	-	ns
tA	Access Time	-	100	ns
tRR	Read Recovery Time	25	-	ns
tRPW	Read Pulse Width (Note 2)	85	-	ns
tRLZ	Read Pulse Low to Data Bus at Low Z (Note 3)	10	-	ns
tDV	Data Valid from Read Pulse High	20	-	ns
tRHZ	Read Pulse High to Data Bus at High Z (Note 3)	-	30	ns
tWC	Write Cycle Time	100	-	ns
tWPW	Write Pulse Width (Note 2)	80	-	ns
tWR	Write Recovery Time	20	-	ns
tDS	Data Setup Time	40	-	ns
tDH	Data Hold Time	10	-	ns
tRSC	Reset Cycle Time (Note 3)	100	-	ns
tRS	Reset Pulse Width (Note 2)	80	-	ns
tRSR	Reset Recovery Time (Note 3)	20	-	ns
tRTC	Retransmit Cycle Time (Note 3)	100	-	ns
tRT	Retransmit Pulse Width (Note 2)	80	-	ns
tRTR	Retransmit Recovery Time (Note 3)	20	-	ns
tEFL	Reset to Empty Flag Low	-	100	ns
tREF	Read Low to Empty Flag Low	-	90	ns
tRFF	Read High to Full Flag High	-	70	ns
tWEF	Write High to Empty Flag High	-	70	ns
tWFF	Write Low to Full Flag Low	-	90	ns
tEFR	EF High to Valid Read (Note 3)	10	-	ns
tRPI	Read Protect Indeterminant (Note 3)	-	35	ns
tFFW	FF High to Valid Wrlte (Note 3)	10	-	ns
tWPI	Write Protect Indeterminant (Note 3)	-	35	ns

Notes:

1.Timings referenced as in A.C. Test Conditions, figure 5

2.Pulse wldths less than minimum values are not allowed

3.Values guaranteed by deslgn, not currently tested

Figure 3b: AC Characteristics

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MA7001

Symbol	Parameter	Conditions
FT	Functionality	VDD = 3-6V, FREQ = 100kHz - 9MHz
		VIL = VSS, VIH = VDD, VOL £ 1.5V, VOH ³ 1.5V
		TEMP = -55 to +125°C, RADIATION 1MRAD TOTAL DOSE
		GROUP A SUBGROUPS 7, 8A, 8B

	Figure 3b: Functionality
Subgroup	Definition
1	Static characteristics specified in Table 3a at +25°C
2	Static characteristics specified in Table 3a at +125°C
3	Static characteristics specified in Table 3a at -55°C
7	Functional characteristics specified in Table 3c at +25°C
8A	Functional characteristics specified in Table 3c at +125°C
8B	Functional characteristics specified in Table 3c at -55°C
9	Switching characteristics specified in Table 3b at +25°C
10	Switching characteristics specified in Table 3b at +125°C
11	Switching characteristics specified in Table 3b at -55°C

Figure 4: Definition of Subgroups

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MA7001

Input Pulse Levels

GND to 3.0V

Output

Test Point

Input Rise and Fall Times

5ns

under test

Input Timing Reference Levels

1.5V

Output Reference Levels

1.5V

≤50pF*

Output Load

See Figure 7

* Includes jig

Figure 5: AC Test Conditions

LOAD 1

and scope

capacitances

Figure 7: Output Load

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacltance (Note 1)

VIN = 0V

7

pF

COUT

Output Capacitance (Notes 1 and 2)

VOUT = 0V

12

pF

NOTES:

1.Characterized values, not currently tested.

2.With output deselected.

Figure 6: Capacitance

TRUTH TABLES

							Input												Output					Pointer
Operation
																							Data	Read	Write
		R			W			RS			RT			Xl			EF			FF
Reset	1			1			0				x			0			0		1				Z	Zero	Zero
Retransmit*	1			1			1			0				0			1		1				Z	Zero	N/C
Read	1→0				x		1			1				0			1		1				valid	Increment	N/C
Read		x			x		1			1				0			0		1				Z	N/C	N/C
Write		x		1→0			1			1				0			x		1				x	N/C	Increment
Write		x			x		1			1				0			1		0				x	N/C	N/C

* Only available if less than 512 writes since last reset.

Figure 8: Single Device or Width Expansion: Read, Write, Reset and Retransmit

Input

Output

Pointer

Operation

Data

Read

Write

R

W

RS

FL

Xl

EF

FF

Reset First

1

1

0

0

1

0

1

Z

Zero

Zero

Reset Rest

1

1

0

1

1

0

1

Z

Zero

Zero

NOTES:

1.See Modes of Operation for connections of Xl and XO in depth expansion mode.

2.XI is connected to XO of previous device (Figure 12).

Figure 9: Depth Expansion: Reset and First Load

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