MP04TT600
MP04TT600
Dual Thyristor Water Cooled Module
Preliminary Information
DS5466-1.1 June 2001
FEATURES
■Dual Device Module
■Electrically Isolated Package
■Pressure Contact Construction
■International Standard Footprint
■Alumina (Non Toxic) Isolation Medium
■Integral Water Cooled Heatsink
APPLICATIONS
■Motor Control
■Controlled Rectifier Bridges
■Heater Control
■AC Phase Control
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Voltages |
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VDRM VRRM |
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V |
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MP04TT600-18 |
1800 |
Tvj = 0˚ to 125˚C, |
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MP04TT600-17 |
1700 |
IDRM = IRRM = 50mA |
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MP04TT600-16 |
1600 |
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VDSM = VRSM = |
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MP04TT600-15 |
1500 |
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VDRM = VRRM + 100V |
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respectively |
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Lower voltage grades available |
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ORDERING INFORMATION
Order As: |
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MP04TT600-XX-W2 |
1/4 - 18 |
NPT connection |
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MP04TT600-XX-W3 |
1/4 - 18 |
NPT |
connection |
MP04TT600-XX-W3A |
1/4 - 18 |
NPT |
water connection |
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thread |
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XX shown in the part number about represents VDRM/100 selection required, eg. MP04TT600-27-W2
Note: When ordering, please use the complete part number.
KEY PARAMETERS |
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VDRM |
1800V |
IT(AV) |
580A |
ITSM(per arm) |
14000A |
IT(RMS) |
912A |
Visol |
3000V |
5 (G1) |
4 (K1) |
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3 (A) |
1 (AK) |
6 (G2) |
7 (K2) |
2 (A) |
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Fig. 1 TT Circuit diagram
Module outline type code: |
Module outline type code: |
MP04-W3 |
MP04-W3A |
Module outline type code: MP04-W2 (See Package Details for further information)
Fig. 2 Module package variants - (not to scale)
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MP04TT600
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol |
Parameter |
Test Conditions |
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Max. |
Units |
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IT(AV) |
Mean on-state current |
Half wave resistive load, |
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Twater (in) = 25˚C |
650 |
A |
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4.5 Ltr/min |
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Twater (in) = 40˚C |
580 |
A |
IT(RMS |
RMS value |
Twater (in) = 25˚C @ 4.5 Ltr/min |
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1020 |
A |
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Twater (in) = 40˚C @ 4.5 Ltr/min |
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912 |
A |
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ITSM |
Surge (non-repetitive) on-current |
10ms half sine, Tj = 125˚C |
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14 |
kA |
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I2t |
I2t for fusing |
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VR = 0 |
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0.975x106 |
A2s |
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ITSM |
Surge (non-repetitive) on-current |
10ms half sine, Tj = 125˚C |
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11.2 |
kA |
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I2t |
I2t for fusing |
V |
R |
= 50% V |
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0.625x106 |
A2s |
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DRM |
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Visol |
Isolation voltage |
Commoned terminals to base plate. |
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3000 |
V |
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AC RMS, 1 min, 50Hz |
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THERMAL AND MECHANICAL RATINGS
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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Rth(j-w) |
Thermal resistance - junction to water |
dc, 4.5 Ltr/min |
- |
0.102 |
˚C/kW |
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(per thyristor) |
Half wave, 4.5 Ltr/min |
- |
0.106 |
˚C/kW |
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3 Phase, 4.5 Ltr/min |
- |
0.112 |
˚C/kW |
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Tvj |
Virtual junction temperature |
Reverse (blocking) |
- |
125 |
˚C |
Tstg |
Storage temperature range |
- |
–40 |
125 |
˚C |
- |
Screw torque |
Mounting - M6 |
6(53) |
- |
Nm (lb.ins) |
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Electrical connections - M10 |
- |
12(106) |
Nm (lb.ins) |
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- |
Weight (nominal) |
- |
- |
Refer to |
g |
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drawings |
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MP04TT600
DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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IRRM/IDRM |
Peak reverse and off-state current |
At VRRM/VDRM, Tj = 125˚C |
- |
50 |
mA |
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dV/dt |
Linear rate of rise of off-state voltage |
To 67% VDRM, Tj = 125˚C |
- |
1000 |
V/µ |
s |
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dI/dt |
Rate of rise of on-state current |
From 67% VDRM to 500A, gate source 10V, 5Ω |
- |
500 |
A/µ |
s |
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tr = 0.5µ s, Tj = 125˚C |
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VT(TO) |
Threshold voltage |
At Tvj = 125˚C |
- |
0.85 |
V |
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rT |
On-state slope resistance |
At Tvj = 125˚C |
- |
0.38 |
mΩ |
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Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
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VGT |
Gate trigger voltage |
VDRM = 5V, Tcase = 25oC |
3.5 |
V |
IGT |
Gate trigger current |
VDRM = 5V, Tcase = 25oC |
200 |
mA |
VGD |
Gate non-trigger voltage |
At VDRM Tcase = 125oC |
0.25 |
V |
VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
30 |
V |
VFGN |
Peak forward gate voltage |
Anode negative with respect to cathode |
0.25 |
V |
VRGM |
Peak reverse gate voltage |
- |
5 |
V |
IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
10 |
A |
PGM |
Peak gate power |
See table fig. 5 |
150 |
W |
PG(AV) |
Mean gate power |
- |
10 |
W |
3/8
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