MAS110S
MAS110S
Fast Turn-off Asymmetric Thyristor/Diode Module
Replaces April 1999 version, DS4200-4.0 DS4200-5.0 January 2000
APPLICATIONS |
KEY PARAMETERS |
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High Frequency High Power Choppers And Inverters. |
VDRM |
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1400V |
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Ultrasonic Generators. |
ITSM |
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2000A |
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IT(AV) |
per arm |
110A |
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Welding. |
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Visol |
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2500V |
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PWM Inverters. |
tq |
10/12/15μs |
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DESCRIPTION
The MAS 110S is a fast thyristor/diode module in an electrically isolated package. The semiconductors are are pressure contact mounted giving high resistance to thermal fatigue, and having excellent heat dissipation qualities.
Isolation medium is non-toxic alumina.
The MAS110S is recognised under the 'Recognised Component Program of Underwriters Laboratories Inc. USA. File number E151069.
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Off-state Voltage |
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VDRM |
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V |
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MAS110S 14 |
1400 |
Tvj |
= 125˚C, |
MAS110S 12 |
1200 |
IDRM |
= 50mA, |
MAS110S 10 |
1000 |
VDSM = VDRM + 100V |
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MAS110S 08 |
800 |
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MAS110S 06 |
600 |
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For full description of part number see 'Ordering Information'.
Outline type code: MAS110S
See Package Details for further information.
Fig.1 Package outline (not to scale)
G1 K1
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Fig.2 Single circuit
THYRISTOR CURRENT RATINGS
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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I |
Mean forward current |
Half wave resistive load, T |
case |
= 75oC |
110 |
A |
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T(AV) |
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I |
RMS value |
T |
case |
= 75oC |
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175 |
A |
T(RMS) |
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MAS110S
THYRISTOR SURGE RATINGS
Symbol |
Parameter |
Conditions |
Max. |
Units |
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ITSM |
Surge (non-repetitive) on-state current |
10ms half sine; Tcase = 125oC |
2.0 |
kA |
I2t |
I2t for fusing |
VR = 0% VDRM |
20.0 x 103 |
A2s |
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THYRISTOR DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
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Conditions |
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Min. |
Max. |
Units |
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VTM |
Maximum on-state voltage |
At 600A peak, Tcase = 25oC |
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- |
2.9 |
V |
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I |
DRM |
Peak off-state current |
At V |
, T |
case |
= 125oC |
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- |
70 |
mA |
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DRM |
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dV/dt |
Maximum linear rate of rise of off-state voltage |
To 60% V T = 125oC, Gate open circuit |
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1000 |
V/μs |
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DRM |
j |
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dI/dt |
Rate of rise of on-state current |
From 67% VDRM to 600A, |
Repetitive 50Hz |
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500 |
A/μs |
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Gate source 20V, 20Ω |
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tr = < 0.5μs, Tj = 125˚C |
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VT(TO) |
Threshold voltage |
At Tvj = 125oC |
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- |
1.6 |
V |
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rT |
On-state slope resistance |
At Tvj = 125oC |
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1.4 |
mΩ |
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t |
Turn-off time |
IT = 100A, Tj = 125˚C, |
t |
q |
code: W |
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10 |
μs |
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q |
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dIR/dt = 30A/μs, VGK = 0V |
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tq code: S |
- |
12 |
μs |
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dV/dt = 20V/μs to 60% |
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VDRM, VR = 1V. |
t |
code: X |
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15 |
μs |
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q |
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2/9
MAS110S
THYRISTOR GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol |
Parameter |
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Conditions |
Typ. |
Max. |
Units |
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V |
GT |
Gate trigger voltage |
V |
DRM |
= 12V, T |
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= 25oC, R |
L |
= 30Ω |
- |
4.0 |
V |
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case |
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I |
GT |
Gate trigger current |
V |
DRM |
= 12V, T |
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= 25oC |
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- |
250 |
mA |
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case |
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VRGM |
Peak reverse gate voltage |
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- |
7.0 |
V |
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IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
- |
10 |
A |
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PGM |
Peak gate power |
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- |
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50 |
W |
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PG(AV) |
Mean gate power |
Average timing = 10ms |
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15 |
W |
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DIODE CURRENT RATINGS
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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I |
Mean forward current |
Half wave resistive load, T |
case |
= 75oC |
112 |
A |
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T(AV) |
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I |
RMS value |
T |
case |
= 75oC |
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175 |
A |
T(RMS) |
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DIODE SURGE RATINGS - PER ARM
Symbol |
Parameter |
Conditions |
Max. |
Units |
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IFSM |
Surge (non-repetitive) forward current |
10ms half sine; Tcase = 130oC |
3.5 |
kA |
I2t |
I2t for fusing |
VR = 0% VRRM |
61.25 x 103 |
A2s |
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DIODE DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
Conditions |
Max. |
Units |
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VFM |
Forward voltage |
At 600A, Tcase = 25˚C. |
2.65 |
V |
IRRM |
Peak reverse current |
At VRRM, Tcase = 125˚C. |
70 |
mA |
trr |
Reverse recovery time |
Tcase = 125˚C, dIR/dt = -50V/μs, IFM = 200A |
1.3 |
μs |
VTO |
Threshold voltage |
At Tvj = 125˚C. |
1.6 |
V |
rT |
Forward slope resistance |
At Tvj = 125˚C. |
1.5 |
mΩ |
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3/9
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