DYNEX TF91514B, TF91514C, TF91512B, TF91510B, TF91508B Datasheet

TF915..B

TF915..B

Fast Switching Thyristor

Replaces December 1998 version, DS4279-3.0

DS4279-4.0 January 2000

APPLICATIONS

■High Power Inverters And Choppers

■UPS

■Railway Traction

■Induction Heating

■AC Motor Drives

■Cycloconverters

FEATURES

■Double Side Cooling

■High Surge Capability

■High Voltage

VOLTAGE RATINGS

Type Number	Repetitive	Conditions
	Peak
	Voltages
	VDRM VRRM
TF915 14B	1400	VRSM = VRRM + 100V
TF915 12B	1200
TF915 10B	1000	IDRM = IRRM = 60mA
TF915 08B	800
TF915 06B	600	at VRRM or VDRM & Tvj

Lower voltage grades available.

KEY PARAMETERS

VDRM

1400V

IT(RMS)

1700A

ITSM

20000A

dV/dt

300V/μs

dI/dt

500A/μs

tq

40μs

Outline type code: MU169.

See Package Details for further information.

CURRENT RATINGS

Symbol	Parameter	Conditions			Max.	Units
IT(AV)	Mean on-state current	Half sinewave, 50Hz, Tcase = 80oC			1080	A
I	RMS value	Half sinewave, 50Hz, T	case	= 80oC	1700	A
T(RMS)

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TF915..B

SURGE RATINGS

Symbol	Parameter		Conditions				Max.	Units
ITSM	Surge (non-repetitive) on-state current	10ms half sine; VR	= 0%	VRRM, Tj = 125˚C			20.0	kA
I2t	I2t for fusing	10ms half sine; V	= 0%	V , T	j	= 125˚C	2000 x 103	A2s
		R		RRM

THERMAL AND MECHANICAL DATA

	Symbol	Parameter	Conditions		Min.	Max.	Units
			Double side cooled	dc	-	0.020	oC/W
	R	Thermal resistance - junction to case		Anode dc	-	-	oC/W
	th(j-c)		Single side cooled
				Cathode dc	-	-	oC/W
			Clamping force 23.5kN	Double side	-	0.006	oC/W
	Rth(c-h)	Thermal resistance - case to heatsink
			with mounting compound	Single side	-	0.012	oC/W
			On-state (conducting)		-	125	oC
	Tvj	Virtual junction temperature
			Reverse (blocking)		-	125	oC
	Tstg	Storage temperature range			-40	150	oC
	-	Clamping force			22.3	24.6	kN

MEASUREMENT OF RECOVERED CHARGE - QRA1

Measurement of QRA1 : QRA1 = IRR x tRR

2

ITM

				QRA1
	tp	= 1ms			0.5x IRR
		dIR/dt
				IRR

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TF915..B

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Min.

Max.

Units

VTM

Maximum on-state voltage

At 2000A peak, Tcase = 25oC

-

1.75

V

I

/I

Peak reverse and off-state current

At V

/V

, T

case

= 125oC

-

60

mA

RRM

DRM

RRM DRM

dV/dt

Maximum linear rate of rise of off-state voltage

Linear to 60% V

T = 125oC, Gate open circuit

-

300

V/μs

DRM

j

dI/dt

Gate source 20V, 20Ω

Repetitive 50Hz

-

500

A/μs

Rate of rise of on-state current

tr ≤ 0.5μs, Tj

= 125˚C

Non-repetitive

-

800

A/μs

V

Threshold voltage

At T

vj

= 125oC

-

1.25

V

T(TO)

rT

On-state slope resistance

At Tvj = 125oC

-

0.25

mΩ

tgd

Delay time

Tj = 25˚C, IT = 50A,

1.5*

-

μs

VD = 300V, IG = 1A,

t(ON)TOT

Total turn-on time

dI/dt = 50A/μs, dIG/dt = 1A/μs

3.0*

-

μs

I

H

Holding current

T

j

= 25oC, I

= 1A, V

D

= 12V

100*

-

mA

TM

I

L

Latching current

T

j

= 25oC, I

= 0.5A, V

= 12V

300*

-

mA

G

D

Tj = 125˚C, IT

= 250A, VR = 50V,

t code: B

-

40

μs

t

q

Turn-off time

dV/dt = 20V/μs (Linear to 60% VDRM),

q

dIR/dt = 50A/μs, Gate open circuit

*Typical value.

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Conditions

Typ.

Max.

Units

V

GT

Gate trigger voltage

V

DRM

= 12V, T

= 25oC, R

L

= 6Ω

-

3.0

V

case

I

GT

Gate trigger current

V

DRM

= 12V, T

= 25oC, R

L

= 6Ω

-

200

mA

case

V

GD

Gate non-trigger voltage

At V

T

= 125oC, R

L

= 1kΩ

-

0.2

V

DRM

case

VRGM

Peak reverse gate voltage

-

5.0

V

IFGM

Peak forward gate current

Anode positive with respect to cathode

-

10

A

PGM

Peak gate power

-

50

W

PG(AV)

Mean gate power

-

3

W

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TF915..B

CURVES

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