MP02TT200-14
MP02TT200
G1K1K2G
2
1
23
MP02TT200
Dual Thyristor Water Cooled Module
Preliminary Information
DS5434-1.1 April 2001
FEATURES
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (Non Toxic) Isolation Medium
■ Integral Water Cooled Heatsink
APPLICATIONS
■ Motor Control
■ Controlled Rectifier Bridges
■ Heater Control
■ AC Phase Control
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
MP02TT200-16
MP02TT200-15
MP02TT200-14
MP02TT200-13
MP02TT200-12
Lower voltage grades available
1600
1500
1400
1300
1200
Conditions
T
= 0˚ to 125˚C,
vj
I
= I
= V
= V
= 30mA
RRM
RSM
RRM
V
V
DRM
DSM
DRM
respectively
=
+ 100V
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM(per arm)
I
T(RMS)
V
isol
Fig. 1 Circuit diagram
1
1600V
200A
6800A
318A
3000V
23
K2
G2
K1 G1
ORDERING INFORMATION
Outline type code: MP02 W12/W13
Order As:
MP02TT200-XX-W12 1/4 - 18 NPT connection
MP02TT200-XX-W13 1/4 BSP connection
XX shown in the part number about represents V
selection required, e.g. MP02TT200-14-W12
DRM
/100
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Note: When ordering, please use the whole part number.
Auxiliary gate and cathode leads can be ordered separately.
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MP02TT200
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
I
T(AV)
I
T(RMS
I
TSM
I2t
I
TSM
I2t
V
isol
Mean on-state current
RMS value
Surge (non-repetitive) on-current
2
t for fusing
I
Surge (non-repetitive) on-current
2
t for fusing
I
Isolation voltage
Parameter
THERMAL AND MECHANICAL RATINGS
Test Conditions
Half wave resistive load, T
4.5 Ltr/min T
= 25˚C @ 4.5 Ltr/min
T
water (in)
= 40˚C @ 4.5 Ltr/min
T
water (in)
R
= 0
= 125˚C
j
= 125˚C
j
DRM
10ms half sine, T
V
10ms half sine, T
= 50% V
V
R
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
water (in)
water (in)
T
water (in)
= 25˚C
= 40˚C
= 50˚C
Max.
230
200
180
360
318
6.8
0.231 x 10
5.5
0.15 x 10
3000
6
6
Units
A
A
A
A
A
kA
2
s
A
kA
2
s
A
V
Symbol
R
th(j-w)
T
vj
T
stg
-
-
2/9
Parameter
Thermal resistance - junction to water
(per thyristor)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
Mounting - M6
Electrical connections - M6
-
Min.
-
-
-
-
–40
5 (44)
-
-
Max.
0.3
0.32
0.33
125
125
5 (44)
1200
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
Nm (lb.ins)
Nm (lb.ins)
g
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DYNAMIC CHARACTERISTICS
MP02TT200
Symbol
I
RRM/IDRM
dV/dt
dI/dt
V
T(TO)
r
T
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Test Conditions
DRM
= 125˚C
= 125˚C
, Tj = 125˚C
, Tj = 125˚C
to 200A, gate source 10V, 5Ω
DRM
At V
RRM/VDRM
To 67% V
From 67% V
t
= 0.5µs, Tj = 125˚C
r
At T
vj
At T
vj
Min.
-
-
-
-
-
Max.
30
1000
500
0.98
0.75
Units
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
Gate trigger voltage
Gate trigger current
Parameter
V
V
DRM
DRM
= 5V, T
= 5V, T
Test Conditions
= 25oC
case
= 25oC
case
Max.
150
Units
3
mA
V/µs
A/µs
V
mΩ
V
mA
P
V
V
V
V
I
FGM
P
G(AV)
GD
FGM
FGN
RGM
GM
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
At V
DRM Tcase
= 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
0.25
30
0.25
5
10
100
5
V
V
V
V
A
W
W
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