MP04HB910
MP04HB910
Dual Rectifier Diode Module
Preliminary Information
DS5425-1.2 February 2001
FEATURES
■Dual Device Module
■Electrically Isolated Package
■Pressure Contact Construction
■International Standard Footprint
■Alumina (Non-toxic) Isolation Medium
APPLICATIONS
■Power Supplies
■Large IGBT Circuit 'Front Ends'
■Rectifiers
■Battery Chargers
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Voltages |
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VDRM VRRM |
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V |
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MP04HB910-30 |
3000 |
Tvj = –40˚ to 150˚C, |
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MP04HB910-28 |
2800 |
VRSM = VRRM + 100V |
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MP04HB910-26 |
2600 |
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MP04HB910-24 |
2400 |
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Lower voltage grades available
ORDERING INFORMATION
Order As:
MP04HB910-XX
XX shown in the part number about represents VRRM/100 selection required.
Note: When ordering, please use the complete part number. Please quote full part number in all correspondance.
KEY PARAMETERS
VRRM |
3000V |
IF(AV) |
915A |
IFSM (per arm) |
20000A |
IF(RMS) |
1440A |
Visol |
3000V |
1 |
2 |
3 |
Fig.1 HB circuit configuration
Outline type code: MP04
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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MP04HB910
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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IF(AV) |
Mean forward current |
Half wave resistive load |
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Tcase = 75oC |
915 |
A |
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Tcase = 85oC |
830 |
A |
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Tcase = 100oC |
695 |
A |
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I |
RMS value |
T |
case |
= 75oC |
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1440 |
A |
F(RMS) |
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Tcase = 85oC |
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1305 |
A |
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Tcase = 100oC |
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1090 |
A |
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IFSM |
Surge (non-repetitive) forward current |
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10ms half sine; |
Tj = 150oC |
20 |
kA |
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I2t |
I2t for fusing |
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VR = 0 |
2.0 x 106 |
A2s |
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IFSM |
Surge (non-repetitive) forward current |
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10ms half sine; |
Tj = 150oC |
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16 |
kA |
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I2t |
I2t for fusing |
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VR = 50% VRRM |
1.28 x 106 |
A2s |
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Visol |
Isolation voltage |
Commoned terminals to base plate AC RMS, 1 min, 50Hz |
3000 |
V |
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THERMAL AND MECHANICAL DATA
Symbol |
Parameter |
Conditions |
Min. |
Max. |
Units |
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R |
Thermal resistance - junction to case |
dc |
- |
0.056 |
oC/W |
th(j-c) |
(per diode) |
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Halfwave |
- |
0.060 |
oC/W |
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3 Phase |
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0.066 |
oC/W |
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Tvj |
Virtual junction temperature |
Reverse (blocking) |
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150 |
oC |
Tstg |
Storage temperature range |
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–40 |
150 |
oC |
- |
Screw torque |
Mounting |
6 (53) |
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Nm (lb.ins) |
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Electrical connections |
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12 (106) |
Nm (lb.ins) |
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Weight (nominal) |
- |
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1580 |
g |
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2/7
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MP04HB910
CHARACTERISTICS
Symbol |
Parameter |
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Conditions |
Min. |
Max. |
Units |
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I |
RRM |
Peak reverse current |
At V , T |
case |
= 150oC |
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50 |
mA |
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RRM |
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QS |
Total stored charge |
IF = 1000A, dIRR/dt = 3A/µ s |
- |
1600 |
µ C |
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Tcase = 150˚C, VR = 100V |
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IRR |
Peak recovery current |
- |
85 |
A |
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VTO |
Threshold voltage. See Note 1. |
At Tvj = 150˚C |
- |
0.7 |
V |
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rT |
Slope resistance. See Note 1. |
At Tvj = 150˚C |
- |
0.29 |
mΩ |
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Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to the impedance of the busbars from the terminals to the semiconductor.
CURVES
-(A) |
2500 |
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F2000 |
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current I |
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forward |
1500 |
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Instantaneous |
1000 |
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500 |
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0 |
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0.5 |
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Measured under pulse |
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2200 |
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conditions |
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2000 |
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1800 |
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arm) |
1600 |
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per |
1400 |
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(Watts, |
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1200 |
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dissipation |
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Tj = 150˚C |
Tj = 25˚C |
1000 |
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Power |
800 |
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600 |
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60° |
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30° |
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400 |
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90° |
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120° |
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200 |
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180° |
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DC |
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0 |
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0.75 |
1.0 |
1.25 |
1.5 |
0 |
200 |
400 |
600 |
800 |
1000 |
1200 |
1400 |
1600 |
1800 |
Instantaneous forward voltage VF - (V) |
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Forward current, (Average, per arm) IF(AV) - (A) |
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Fig.3 Maximum (limit) forward characteristics |
Fig.4 Power dissipation curves |
3/7
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