DYNEX MP03-190-08, MP03-190-10, MP03-190-12 Datasheet

MP03 XXX 190 Series

MP03 XXX 190 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS5099-3.0

DS5099-4.0 January 2000

FEATURES

■Dual Device Module

■Electrically Isolated Package

■Pressure Contact Construction

■International Standard Footprint

■Alumina (non-toxic) Isolation Medium

APPLICATIONS

■Motor Control

■Controlled Rectifier Bridges

■Heater Control

■AC Phase Control

VOLTAGE RATINGS

	Type	Repetitive	Conditions
	Number	Peak
		Voltages
		VDRM VRRM
	MP03/190 - 12	1200	T(vj) = 125oC
	MP03/190 - 10	1000	IDRM = IRRM = 30mA
	MP03/190 - 08	800	VDSM & VRSM =
			VDRM & VRRM + 100V
			respectively

Lower voltage grades available. For full description of part number see "Ordering Instructions" on page 3.

	KEY PARAMETERS
VDRM		1200V
ITSM		5500A
IT(AV)(per arm)		190A
Visol		2500V
	CIRCUIT OPTIONS
Code	Circuit
HBT

HBP

HBN

PACKAGE OUTLINE

Module outline type code: MP03.

See Package Details for further information

CURRENT RATINGS - PER ARM

	Symbol	Parameter			Conditions					Max.	Units
						Tcase = 75oC				190	A
	IT(AV)	Mean on-state current	Halfwave, resistive load			T	case	= 85oC		158	A
						T	heatsink		= 75oC	160	A
						Theatsink = 85oC				133	A
	I	RMS value	T	case	= 75oC					300	A
	T(RMS)

1/10

MP03 XXX 190 Series

SURGE RATINGS - PER ARM

Symbol	Parameter		Conditions			Max.	Units
ITSM	Surge (non-repetitive) on-state current	10ms half sine;		VR = 0		5500	A
		T = 125oC		VR	= 50% VRRM	4200	A
		j
I2t	I2t for fusing	10ms half sine;		V	= 0	151000	A2s
				R
		T = 125oC
				VR	= 50% VRRM	88200	2	s
		j					A

THERMAL & MECHANICAL RATINGS

	Symbol		Parameter	Conditions	Max.	Units
				dc	0.21	oC/W
			Thermal resistance - junction to case
	R			halfwave	0.22	oC/W
		th(j-c)	per Thyristor or Diode
				3 phase	0.23	oC/W
	Rth(c-hs)		Thermal resistance - case to heatsink	Mounting torque = 5Nm	0.05	oC/W
			per Thyristor or Diode	with mounting compound
	T	vj	Virtual junction temperature		125	oC
	T		Storage temperature range		-40 to 125	oC
		sto
	Visol		Isolation voltage	Commoned terminals to base plate	2.5	kV
				AC RMS, 1min, 50Hz

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Max.

Units

V

On-state voltage

At 500A, T

case

= 25oC - See Note 1

1.30

V

TM

I

/I

Peak reverse and off-state current

At V

/V , T

= 125oC

30

mA

RRM

DRM

RRM

DRM

j

dV/dt

Linear rate of rise of off-state voltage

To 60% V

DRM

T = 125oC

200*

V/μs

j

From 67% VDRM to 400A

Repetitive 50Hz

100

A/μs

dI/dt

Rate of rise of on-state current

Gate source 20V, 20Ω

Rise time 0.5μs, T

=125oC

j

VT(TO)

Threshold voltage

At Tvj = 125oC - See Note 1

0.88

V

rT

On-state slope resistance

At Tvj = 125oC - See Note 1

0.70

mΩ

* Higher dV/dt values available, contact factory for particular requirements.

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.

2/10

MP03 XXX 190 Series

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol		Parameter		Conditions				Typ.	Max.	Units
V	GT	Gate trigger voltage	V	= 6V, T	= 25oC, R		= 6Ω	-	3.0	V
			DRM	case	L
I		Gate trigger current	V	= 6V, T	= 25oC, R	L	= 6Ω	-	200	mA
GT			DRM	case
VGD		Gate non-trigger voltage	VD = VDRM , Tj = 125˚C					-	0.20	V
VRGM		Peak reverse gate voltage						-	5.0	V
IFGM		Peak forward gate current	Anode positive with respect to cathode					-	4	A
PGM		Peak gate power						-	16	W
PG(AV)		Mean gate power						-	3	W

ORDERING INSTRUCTIONS

Part number is made up of as follows:

	MP03 HBT 190 - 12
MP	= Pressure contact module
03	= Outline type
HBT	= Circuit configuration code (see "circuit options" - front page)
190	= Nominal average current rating at Tcase = 75oC
12	= VRRM/100

Examples:

MP03 HBP190 - 08 MP03 HBN190 - 12 MP03 HBT190 - 10

Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN. Types HBP or HBN can also be supplied with diode polarity reversed, to special order.

MOUNTING RECOMMENDATIONS

Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation

may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with

calculations or choice of heatsink if required.

The heatsink surface must be smooth and flat; a surface finish of N6 (32μin) and a flatness within 0.05mm (0.002") are

recommended.

Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign

particles remain.

An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance.

After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 5Nm (44lb.ins) is reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module.

3/10