DYNEX TF94432H, TF94430H, TF94435H, TF94434H Datasheet

TF944..H

TF944..H

Fast Switching Thyristor

Replaces March 1998 version, DS4281-3.2

DS4281-4.0 January 2000

APPLICATIONS

■High Power Inverters And Choppers

■UPS

■Railway Traction

■Induction Heating

■AC Motor Drives

■Cycloconverters

FEATURES

■Double Side Cooling

■High Surge Capability

■High Voltage

VOLTAGE RATINGS

Type Number	Repetitive	Conditions
	Peak
	Voltages
	VDRM VRRM
TF944 35H	3500	VRSM = VRRM + 100V
TF944 34H	3400
TF944 32H	3200	IDRM = IRRM = 100mA
TF944 30H	3000
		at VRRM or VDRM & Tvj
Lower voaltage grades available.

KEY PARAMETERS

VDRM

3500V

IT(RMS)

1350A

ITSM

13000A

dV/dt

500V/μs

dI/dt

500A/μs

tq

120μs

Outline type code: MU169

See Package Details for further information.

CURRENT RATINGS

Symbol	Parameter	Conditions			Max.	Units
IT(AV)	Mean on-state current	Half sinewave, 50Hz, Tcase = 80oC			850	A
I	RMS value	Half sinewave, 50Hz, T	case	= 80oC	1350	A
T(RMS)

1/7

TF944..H

SURGE RATINGS

Symbol	Parameter		Conditions				Max.	Units
ITSM	Surge (non-repetitive) on-state current	10ms half sine; VR	= 0%	VRRM, Tj = 125˚C			13.0	kA
I2t	I2t for fusing	10ms half sine; V	= 0%	V , T	j	= 125˚C	845 x 103	A2s
		R		RRM

THERMAL AND MECHANICAL DATA

	Symbol	Parameter	Conditions		Min.	Max.	Units
			Double side cooled	dc	-	0.02	oC/W
	R	Thermal resistance - junction to case		Anode dc	-	-	oC/W
	th(j-c)		Single side cooled
				Cathode dc	-	-	oC/W
			Clamping force 23.5kN	Double side	-	0.006	oC/W
	Rth(c-h)	Thermal resistance - case to heatsink
			with mounting compound	Single side	-	0.012	oC/W
			On-state (conducting)		-	135	oC
	Tvj	Virtual junction temperature
			Reverse (blocking)		-	125	oC
	Tstg	Storage temperature range			-40	150	oC
	-	Clamping force			22.3	24.6	kN

MEASUREMENT OF RECOVERED CHARGE - QRA1

Measurement of QRA1 : QRA1 = IRR x tRR

2

ITM

				QRA1
	tp	= 1ms			0.5x IRR
		dIR/dt
				IRR

2/7

TF944..H

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Min.

Max.

Units

VTM

Maximum on-state voltage

At 1500A peak, Tcase = 25oC

-

2.4

V

I

/I

Peak reverse and off-state current

At V

/V

, T

case

= 125oC

-

100

mA

RRM

DRM

RRM DRM

dV/dt

Maximum linear rate of rise of off-state voltage

Linear to 60% V

T = 125oC, Gate open circuit

-

500

V/μs

DRM

j

dI/dt

Gate source 20V, 20Ω

Repetitive 50Hz

-

500

A/μs

Rate of rise of on-state current

tr ≤ 0.5μs, Tj

= 125˚C

Non-repetitive

-

800

A/μs

V

Threshold voltage

At T

vj

= 125oC

-

1.35

V

T(TO)

rT

On-state slope resistance

At Tvj = 125oC

-

0.5

mΩ

tgd

Delay time

Tj = 25˚C, IT = 50A,

-

-*

μs

VD = 300V, IG = 1A,

t(ON)TOT

Total turn-on time

dI/dt = 50A/μs, dIG/dt = 1A/μs

-

-*

μs

I

H

Holding current

T

= 25oC, I

= 1A, V

D

= 12V

100*

-

mA

j

TM

I

H

Holding current

T

= 25oC, I

= 0.5A, V

= 12V

300*

-

mA

j

G

D

t

q

Turn-off time

Tj = 125˚C, IT

= 500A, VR

= 100V,

t code: H

-

120

μs

dV/dt = 20V/μs to 66% VDRM,

q

Q

RR

Reverse recovery charge

dIR/dt = 50A/μs.

-

-

μC

*Typical value.

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Conditions

Typ.

Max.

Units

V

GT

Gate trigger voltage

V

= 12V, T

= 25oC, R

L

= 6Ω

-

3.0

V

DRM

case

I

GT

Gate trigger current

V

= 12V, T

= 25oC, R

L

= 6Ω

-

250

mA

DRM

case

V

GD

Gate non-trigger voltage

At V

T

= 125oC, R

L

= 1kΩ

-

0.25

V

DRM

case

VFGM

Peak forward gate voltage

Anode positive with respect to cathode

-

30

V

VFGN

Peak forward gate voltage

Anode negative with respect to cathode

-

0.25

V

VRGM

Peak reverse gate voltage

-

5.0

V

IFGM

Peak forward gate current

Anode positive with respect to cathode

-

10

A

PGM

Peak gate power

-

50

W

PG(AV)

Mean gate power

-

3.0

W

3/7