DYNEX TK1812M, TK1812K, TK1810M, TK1810K Datasheet

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DYNEX TK1812M, TK1812K, TK1810M, TK1810K Datasheet

 

 

TK18

 

 

 

 

 

 

TK18

 

 

Phase Control Thyristor

 

Replaces January 2000 version, DS45253-4.0

DS4253-5.0 July 2001

 

 

 

 

FEATURES

KEY PARAMETERS

■ High Surge Capability

VDRM

1200V

 

APPLICATIONS

IT(AV)

115A

 

ITSM

2000A

 

■ High Power Drives

 

dVdt*

200V/

s

High Voltage Power Supplies

dI/dt

500A/

s

DC Motor Control

 

 

 

Welding

*Higher dV/dt selections available

 

 

 

■ Battery Chargers

VOLTAGE RATINGS

Type Number

Repetitive Peak

Conditions

 

Voltages

 

 

VDRM VRRM

 

 

V

 

 

 

 

TK18 12 M or K

1200

Tvj = 0˚ to 125˚C,

TK18 10 M or K

1000

IDRM = IRRM = 100mA,

 

 

VDRM, VRRM tp = 10ms,

 

 

VDSM & VRSM =

 

 

VDRM & VRRM + 100V

 

 

respectively

Lower voltage grades available.

 

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table, then:-

Add K to type number for 1/2" 20 UNF thread, e.g. TK18 12K.

or

Add M to type number for M12 thread, e.g. TK18 12M.

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

Outline type code: TO94.

See Package Details for further information.

Fig. 1 Package outline

1/8

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TK18

CURRENT RATINGS

Tcase = 60˚C unless stated otherwise.

Symbol

Parameter

Conditions

Max.

Units

 

 

 

 

 

IT(AV)

Mean on-state current

Half wave resistive load

152

A

IT(RMS)

RMS value

-

239

A

IT

Continuous (direct) on-state current

-

206

A

 

 

 

 

 

Tcase = 80˚C unless stated otherwise.

Symbol

Parameter

Conditions

Max.

Units

 

 

 

 

 

IT(AV)

Mean on-state current

Half wave resistive load

115

A

IT(RMS)

RMS value

-

180

A

IT

Continuous (direct) on-state current

-

155

A

 

 

 

 

 

SURGE RATINGS

Symbol

Parameter

Conditions

Max.

Units

 

 

 

 

 

 

ITSM

Surge (non-repetitive) on-state current

10ms half sine;

Tcase = 125oC

1.6

kA

I2t

I2t for fusing

VR = 50% VRRM - 1/4 sine

12.8 x 103

A2s

 

 

 

 

 

 

ITSM

Surge (non-repetitive) on-state current

10ms half sine;

Tcase = 125oC

2.0

kA

I2t

I2t for fusing

VR = 0

20.0 x 103

A2s

 

 

 

 

 

 

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Conditions

Min.

Max.

Units

 

 

 

 

 

 

R

Thermal resistance - junction to case

dc

-

0.24

oC/W

th(j-c)

 

 

 

 

 

 

 

 

 

 

 

Rth(c-h)

Thermal resistance - case to heatsink

Mounting torque 15.0Nm

-

0.08

oC/W

 

 

with mounting compound

 

 

 

 

 

 

 

 

 

 

 

On-state (conducting)

-

125

oC

Tvj

Virtual junction temperature

 

 

 

 

Reverse (blocking)

-

125

oC

 

 

 

 

 

 

 

 

T

Storage temperature range

 

–40

150

oC

stg

 

 

 

 

 

 

 

 

 

 

 

-

Mounting torque

 

12.0

15.0

Nm

 

 

 

 

 

 

2/8

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TK18

DYNAMIC CHARACTERISTICS

Symbol

Parameter

 

 

 

 

Conditions

 

Min.

Max.

Units

 

 

 

 

 

 

 

 

 

VTM

Maximum on-state voltage

At 300A peak, Tcase = 25oC

 

-

1.5

V

 

I

 

/I

Peak reverse and off-state current

At V

RRM

/V

, T = 125oC

 

-

10

mA

RRM

 

DRM

 

 

DRM

case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dV/dt

Maximum linear rate of rise of off-state voltage

To 60% V T = 125oC, Gate open circuit

-

200

V/µ

s

 

 

 

 

 

 

 

 

DRM

j

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate source 20V, 20Ω

Repetitive 50Hz

-

500

A/µ

s

dI/dt

Rate of rise of on-state current

tr ≤ 0.5µ

s, Tj

= 125˚C

 

 

 

 

 

 

 

Non-repetitive

-

800

A/µ

s

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

T(TO)

Threshold voltage

At T

 

= 125oC

 

 

 

-

0.9

V

 

 

 

vj

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

r

T

On-state slope resistance

At T

 

= 125oC

 

 

 

-

2.0

mΩ

 

 

 

 

 

vj

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tgd

Delay time

VD = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µ s,

-

1.5

µ s

dI /dt = 1A/µ

s, T

= 25oC

 

 

 

 

 

 

G

 

 

 

j

 

 

 

 

 

 

 

 

IL

Latching current

Tj = 25oC, VD = 12V

 

-

-

mA

 

 

 

 

 

 

 

 

 

IH

Holding current

Tj = 25oC, VD = 12V, ITM = 1A

 

-

50

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

 

 

Conditions

Typ.

Max.

Units

 

 

 

 

 

 

 

 

 

 

 

 

V

GT

Gate trigger voltage

V

= 12V, T

= 25oC, R

L

= 6Ω

-

3.0

V

 

 

 

 

DRM

case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

GT

Gate trigger current

V

DRM

= 12V, T

= 25oC, R

L

= 6Ω

-

125

mA

 

 

 

case

 

 

 

 

 

 

 

 

 

 

 

 

VGD

Gate non-trigger voltage

At VDRM Tcase = 125oC, RL = 12Ω

-

0.2

V

VFGM

Peak forward gate voltage

Anode positive with respect to cathode

-

3.0

V

VFGN

Peak forward gate voltage

Anode negative with respect to cathode

-

0.25

V

VRGM

Peak reverse gate voltage

 

 

 

 

 

 

 

-

5

V

IFGM

Peak forward gate current

Anode positive with respect to cathode

-

4

A

PGM

Peak gate power

 

 

 

-

 

 

 

-

16

W

PG(AV)

Mean gate power

 

 

 

 

 

 

 

-

3

W

3/8

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