DYNEX TK3612M, TK3612K, TK3610K, TK3610M, TK3608M Datasheet
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TK36
TK36
Phase Control Thyristor
Replaces January 2000 version, DS4255-4.0 |
DS4255-5.0 July 2001 |
FEATURES
■ High Surge Capability
APPLICATIONS
■High Power Drives
■High Voltage Power Supplies
■DC Motor Control
■Welding
■Battery Chargers
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Voltages |
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VDRM VRRM |
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V |
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TK36 12 M or K |
1200 |
Tvj = 0˚ to 125˚C, |
TK36 10 M or K |
1000 |
IDRM = IRRM = 100mA, |
TK36 08 M or K |
800 |
VDRM, VRRM tp = 10ms, |
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VDSM & VRSM = |
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VDRM & VRRM + 100V |
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respectively |
Lower voltage grades available. |
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ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, then:-
Add K to type number for 3/4" 16 UNF thread, e.g. TK36 12K.
or
Add M to type number for M16 thread, e.g. TK36 12M.
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
KEY PARAMETERS
VDRM 1200V IT(AV) 245A ITSM 5500A dVdt* 200V/ s
dI/dt 500A/ s
*Higher dV/dt selections available
Outline type code: TO93.
See Package Details for further information.
Fig. 1 Package outline
1/8
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TK36
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol |
Parameter |
Conditions |
Max. |
Units |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
323 |
A |
IT(RMS) |
RMS value |
- |
507 |
A |
IT |
Continuous (direct) on-state current |
- |
425 |
A |
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Tcase = 80˚C unless stated otherwise.
Symbol |
Parameter |
Conditions |
Max. |
Units |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
245 |
A |
IT(RMS) |
RMS value |
- |
385 |
A |
IT |
Continuous (direct) on-state current |
- |
315 |
A |
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SURGE RATINGS
Symbol |
Parameter |
Conditions |
Max. |
Units |
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ITSM |
Surge (non-repetitive) on-state current |
10ms half sine; |
Tcase = 125oC |
4.4 |
kA |
I2t |
I2t for fusing |
VR = 50% VRRM - 1/4 sine |
96.8 x 103 |
A2s |
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ITSM |
Surge (non-repetitive) on-state current |
10ms half sine; |
Tcase = 125oC |
5.5 |
kA |
I2t |
I2t for fusing |
VR = 0 |
151.25 x 103 |
A2s |
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THERMAL AND MECHANICAL DATA
Symbol |
Parameter |
Conditions |
Min. |
Max. |
Units |
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R |
Thermal resistance - junction to case |
dc |
- |
0.13 |
oC/W |
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th(j-c) |
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Rth(c-h) |
Thermal resistance - case to heatsink |
Mounting torque 35.0Nm |
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0.06 |
oC/W |
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with mounting compound |
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On-state (conducting) |
- |
125 |
oC |
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Tvj |
Virtual junction temperature |
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Reverse (blocking) |
- |
125 |
oC |
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T |
Storage temperature range |
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-40 |
150 |
oC |
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stg |
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- |
Mounting torque |
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30.0 |
35.0 |
Nm |
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TK36
DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
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Conditions |
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Min. |
Max. |
Units |
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VTM |
Maximum on-state voltage |
At 600A peak, Tcase = 25oC |
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1.3 |
V |
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I |
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/I |
Peak reverse and off-state current |
At V |
RRM |
/V |
, T = 125oC |
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25 |
mA |
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RRM |
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DRM |
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DRM |
case |
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dV/dt |
Maximum linear rate of rise of off-state voltage |
To 60% V T = 125oC, Gate open circuit |
- |
200 |
V/µ |
s |
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DRM |
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Gate source 20V, 20Ω |
Repetitive 50Hz |
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500 |
A/µ |
s |
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dI/dt |
Rate of rise of on-state current |
tr ≤ 0.5µ |
s, Tj |
= 125˚C |
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Non-repetitive |
- |
800 |
A/µ |
s |
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V |
T(TO) |
Threshold voltage |
At T |
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= 125oC |
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- |
0.88 |
V |
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vj |
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r |
T |
On-state slope resistance |
At T |
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= 125oC |
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0.7 |
mΩ |
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vj |
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tgd |
Delay time |
VD = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µ s, |
- |
1.5 |
µ s |
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dI /dt = 1A/µ |
s, T |
= 25oC |
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G |
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j |
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IL |
Latching current |
Tj = 25oC, VD = 12V |
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mA |
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IH |
Holding current |
Tj = 25oC, VD = 12V, ITM = 1A |
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50 |
mA |
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol |
Parameter |
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Conditions |
Typ. |
Max. |
Units |
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V |
GT |
Gate trigger voltage |
V |
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= 12V, T |
= 25oC, R |
L |
= 6Ω |
- |
3.0 |
V |
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DRM |
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case |
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I |
GT |
Gate trigger current |
V |
DRM |
= 12V, T |
= 25oC, R |
L |
= 6Ω |
- |
200 |
mA |
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case |
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V |
GD |
Gate non-trigger voltage |
At V |
DRM |
T |
case |
= 125oC, R |
L |
= 1kΩ |
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0.2 |
V |
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VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
- |
30 |
V |
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VFGN |
Peak forward gate voltage |
Anode negative with respect to cathode |
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0.25 |
V |
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VRGM |
Peak reverse gate voltage |
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5 |
V |
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IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
- |
4 |
A |
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PGM |
Peak gate power |
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- |
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16 |
W |
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PG(AV) |
Mean gate power |
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3 |
W |
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