DYNEX MP03HBP360-16, MP03HBP360-18, MP03HBT360-08, MP03HBP360-12, MP03HBN360-14 Datasheet
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MP03XXX360
MP03XXX360
Dual Thyristor, Thyristor/Diode Module
Replaces January 2000 version, DS4484-5.0 |
DS4484-6.1 June 2001 |
FEATURES
■Dual Device Module
■Electrically Isolated Package
■Pressure Contact Construction
■International Standard Footprint
■Alumina (Non Toxic) Isolation Medium
APPLICATIONS
■Motor Control
■Controlled Rectifier Bridges
■Heater Control
■AC Phase Control
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Voltages |
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VDRM VRRM |
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V |
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MP03XXX360-18 |
1800 |
Tvj = 0˚ to 125˚C, |
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MP03XXX360-16 |
1600 |
IDRM = IRRM = 30mA |
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MP03XXX360-14 |
1400 |
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VDSM = VRSM = |
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MP03XXX360-12 |
1200 |
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MP03XXX360-10 |
1000 |
VDRM = VRRM + 100V |
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MP03XXX360-08 |
800 |
respectively |
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Lower voltage grades available.
XXX shown in the part number above represents the circuit configuration required.
ORDERING INFORMATION
Order As:
MP03HBT360-XX
MP03HBN360-XX
MP03HBP360-XX
XX shown in the part number above represents the VRRM/100 slection required, e.g. MP03HBT360-17
Note: When ordering, please use the complete part number.
KEY PARAMETERS |
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VDRM |
1800V |
IT(AV) |
355A |
ITSM(per arm) |
8100A |
Visol |
3000V |
G1 K1 K2 G2
1
2 
3
Circuit type code: HBT
G1 K1
1
2 
3
Circuit type code: HBP
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K2 G2 |
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1 |
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2 |
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3 |
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Circuit type code: HBN
Fig. 1 Circuit diagrams
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K2 |
1 |
2 |
3 |
G2 |
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G1 |
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K1 |
Outline type code: MP03
Fig. 2 Electrical connections - (not to scale)
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MP03XXX360
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
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Tcase = 75˚C |
355 |
A |
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Tcase = 85˚C |
312 |
A |
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Theatsink = 75˚C |
276 |
A |
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Theatsink = 85˚C |
242 |
A |
IT(RMS |
RMS value |
Tcase = 75˚C |
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560 |
A |
ITSM |
Surge (non-repetitive) on-current |
10ms half sine, Tj = 130˚C |
8.1 |
kA |
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I2t |
I2t for fusing |
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VR = 0 |
0.33x106 |
A2s |
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ITSM |
Surge (non-repetitive) on-current |
10ms half sine, Tj = 130˚C |
6.5 |
kA |
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I2t |
I2t for fusing |
V |
R |
= 50% V |
0.21x106 |
A2s |
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DRM |
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Visol |
Isolation voltage |
Commoned terminals to base plate. |
3000 |
V |
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AC RMS, 1 min, 50Hz |
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THERMAL AND MECHANICAL RATINGS
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Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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Rth(j-c) |
Thermal resistance - junction to case |
dc |
- |
0.105 |
˚C/kW |
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(per thyristor or diode) |
Half wave |
- |
0.115 |
˚C/kW |
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3 Phase |
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0.12 |
˚C/kW |
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Rth(c-hs) |
Thermal resistance - case to heatsink |
Mounting torque = 5Nm |
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0.05 |
˚C/kW |
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(per thyristor or diode) |
with mounting compound |
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Tvj |
Virtual junction temperature |
Reverse (blocking) |
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135 |
˚C |
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Tstg |
Storage temperature range |
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–40 |
135 |
˚C |
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Screw torque |
Mounting - M5 |
- |
5(44) |
Nm (lb.ins) |
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Electrical connections - M8 |
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9(80) |
Nm (lb.ins) |
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Weight (nominal) |
- |
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950 |
g |
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MP03XXX360
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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IRRM/IDRM |
Peak reverse and off-state current |
At VRRM/VDRM, Tj = 130˚C |
- |
50 |
mA |
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dV/dt |
Linear rate of rise of off-state voltage |
To 67% VDRM, Tj = 130˚C |
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1000 |
V/µ |
s |
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dI/dt |
Rate of rise of on-state current |
From 67% VDRM to 600A, gate source 10V, 5Ω |
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500 |
A/µ |
s |
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tr = 0.5µ s, Tj = 130˚C |
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VT(TO) |
Threshold voltage |
At Tvj = 135˚C. See note 1 |
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0.78 |
V |
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rT |
On-state slope resistance |
At Tvj = 135˚C. See note 1 |
- |
0.79 |
mΩ |
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Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol |
Parameter |
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Test Conditions |
Max. |
Units |
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V |
GT |
Gate trigger voltage |
V |
= 5V, T |
case |
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= 25oC |
3 |
V |
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DRM |
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I |
GT |
Gate trigger current |
V |
= 5V, T |
case |
= 25oC |
150 |
mA |
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DRM |
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VGD |
Gate non-trigger voltage |
At VDRM Tcase = 125oC |
0.25 |
V |
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VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
30 |
V |
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VFGN |
Peak forward gate voltage |
Anode negative with respect to cathode |
0.25 |
V |
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VRGM |
Peak reverse gate voltage |
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- |
5 |
V |
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IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
10 |
A |
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PGM |
Peak gate power |
See table fig. 5 |
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100 |
W |
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PG(AV) |
Mean gate power |
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5 |
W |
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