DYNEX MP04HBT490-26, MP04HBP490-28, MP04HBP490-24, MP04HBP490-26, MP04HBN490-28 Datasheet
...
MP04---490
MP04---490
Dual Thyristor, Thyristor/Diode Module
Advance Information
Replaces Jun3 2000 version, DS5204-1.2 DS5204-2.1 April 2001
FEATURES |
KEY PARAMETERS |
|
|
■ Dual Device Module |
VDRM |
2800V |
|
■ Electrically Isolated Package |
IT(AV) |
490A |
|
ITSM(per arm) |
11250A |
||
|
|||
■ Pressure Contact Construction |
Visol |
3000V |
■ International Standard Footprint |
|
|
||
|
|
|
||
■ Alumina (Non Toxic) Isolation Medium |
Code |
Circuit |
||
■ Integral Water Cooled Heatsink |
||||
|
|
|
||
HBT |
|
|
||
|
|
|
||
|
|
|
||
APPLICATIONS |
HBP |
|
|
■ Motor Control |
|
■ Controlled Rectifier Bridges |
HBN |
|
|
■ Heater Control |
Fig.1 Circuit diagrams |
■ AC Phase Control |
|
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
|
|
Voltages |
|
|
|
VDRM VRRM |
|
|
|
V |
|
|
MP04---490-28 |
2800 |
Tvj = 0˚ to 125˚C, |
|
MP04---490-26 |
2600 |
IDRM = IRRM = 50mA |
|
MP04---490-24 |
2400 |
||
VDSM = VRSM = |
|||
|
|
||
|
|
VDRM = VRRM + 100V |
|
|
|
respectively |
|
|
|
|
|
Lower voltage grades available. |
|
||
ORDERING INFORMATION
Order As:
MP04HBT490-28 or MP04HBT490-26 or MP04HBT490-24 MP04HBP490-28 or MP04HBP490-26 or MP04HBP490-24 MP04HBN490-28 or MP04HBN490-26 or MP04HBN490-24
Module type code: MP04.
For further information see Package Details.
Fig. 2 Electrical connections - (not to scale)
Note: When ordering, please use the whole part number.
1/9
www.dynexsemi.com
MP04---490
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
|||
|
|
|
|
|
|
|
|
IT(AV) |
Mean on-state current |
Half wave resistive load |
|
|
Tcase = 75˚C |
490 |
A |
|
|
|
|
|
Tcase = 85˚C |
420 |
A |
|
|
|
|
|
|
|
|
IT(RMS |
RMS value |
Tcase = 75˚C |
|
|
|
770 |
A |
ITSM |
Surge (non-repetitive) on-current |
10ms half sine, Tj = 125˚C |
11.25 |
kA |
|||
I2t |
I2t for fusing |
|
|
VR = 0 |
633 x 103 |
A2s |
|
|
|
|
|
|
|
||
ITSM |
Surge (non-repetitive) on-current |
10ms half sine, Tj = 125˚C |
9 |
kA |
|||
I2t |
I2t for fusing |
V |
R |
= 50% V |
506 x 103 |
A2s |
|
|
|
|
DRM |
|
|
||
|
|
|
|
|
|
||
Visol |
Isolation voltage |
Commoned terminals to base plate. |
3000 |
V |
|||
|
|
AC RMS, 1 min, 50Hz |
|
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL AND MECHANICAL RATINGS
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
|
|
|
|
|
|
Rth(j-c) |
Thermal resistance - junction to water |
dc, 4.5 Ltr/min |
- |
0.056 |
˚C/kW |
|
(per thyristor or diode) |
Half wave, 4.5 Ltr/min |
- |
0.060 |
˚C/kW |
|
|
|
|
|
|
|
|
3 Phase, 4.5 Ltr/min |
- |
0.066 |
˚C/kW |
|
|
|
|
|
|
Rth(c-hs) |
Thermal resistance - case to heatsink |
Mounting torque = 5Nm |
- |
0.02 |
˚C/kW |
|
(per thyristor or diode) |
with mounting compound |
|
|
|
|
|
|
|
|
|
Tvj |
Virtual junction temperature |
Reverse (blocking) |
- |
125 |
˚C |
Tstg |
Storage temperature range |
- |
–40 |
130 |
˚C |
- |
Screw torque |
Mounting - M6 |
- |
6 (35) |
Nm (lb.ins) |
|
|
|
|
|
|
|
|
Electrical connections - M10 |
- |
12 (106) |
Nm (lb.ins) |
|
|
|
|
|
|
- |
Weight (nominal) |
- |
- |
1580 |
g |
|
|
|
|
|
|
2/9
www.dynexsemi.com
MP04---490
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
|
|
|
|
|
|
|
|
IRRM/IDRM |
Peak reverse and off-state current |
At VRRM/VDRM, Tj = 125˚C |
- |
50 |
mA |
|
dV/dt |
Linear rate of rise of off-state voltage |
To 67% VDRM, Tj = 125˚C |
- |
1000 |
V/µ |
s |
|
|
|
|
|
|
|
dI/dt |
Rate of rise of on-state current |
From 67% VDRM to 1500A, gate source 1.5A, |
- |
500 |
A/µ |
s |
|
|
tr = 0.5µ s, Tj = 125˚C |
|
|
|
|
|
|
|
|
|
|
|
VT(TO) |
Threshold voltage |
At Tvj = 125˚C. See note 1 |
- |
0.91 |
V |
|
rT |
On-state slope resistance |
At Tvj = 125˚C. See note 1 |
- |
0.65 |
mΩ |
|
|
|
|
|
|
|
|
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol |
Parameter |
|
|
|
|
Test Conditions |
Max. |
Units |
|||
|
|
|
|
|
|
|
|
|
|
|
|
V |
GT |
Gate trigger voltage |
V |
= 5V, T |
case |
|
= 25oC |
3.5 |
V |
||
|
|
|
DRM |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
I |
GT |
Gate trigger current |
V |
= 5V, T |
case |
= 25oC |
200 |
mA |
|||
|
|
DRM |
|
|
|
|
|
||||
|
|
|
|
|
|||||||
VGD |
Gate non-trigger voltage |
At VDRM Tcase = 125oC |
0.25 |
V |
|||||||
VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
30 |
V |
|||||||
VFGN |
Peak forward gate voltage |
Anode negative with respect to cathode |
0.25 |
V |
|||||||
VRGM |
Peak reverse gate voltage |
|
|
|
|
|
- |
5 |
V |
||
IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
10 |
A |
|||||||
PGM |
Peak gate power |
See table fig. 5 |
|
|
150 |
W |
|||||
PG(AV) |
Mean gate power |
|
|
|
|
|
- |
10 |
W |
||
3/9
www.dynexsemi.com
Loading...