DYNEX MP04HBT590-14, MP04HBP590-14, MP04HBP590-16, MP04HBP590-18, MP04HBN590-16 Datasheet

MP04---590

MP04---590

Dual Thyristor, Thyristor/Diode Module

Replaces April 2001 version, DS5371-2.2 DS5371-3.1 October 2001

	FEATURES	KEY PARAMETERS
	■ Dual Device Module	VDRM	1800V
	■ Electrically Isolated Package	IT(AV)	595A
		ITSM(per arm)	16800A
	■ Pressure Contact Construction	Visol	3000V

	■ International Standard Footprint
	■ Alumina (Non Toxic) Isolation Medium
		Code	Circuit
	■ Integral Water Cooled Heatsink
		HBT

APPLICATIONS	HBP
■ Motor Control
■ Controlled Rectifier Bridges	HBN
■ Heater Control	Fig.1 Circuit diagrams
■ AC Phase Control

VOLTAGE RATINGS

	Type Number	Repetitive Peak	Conditions
		Voltages
		VDRM VRRM
		V
	MP04---590-18	1800	Tvj = 0˚ to 125˚C,
	MP04---590-16	1600	IDRM = IRRM = 50mA
	MP04---590-14	1400
			VDSM = VRSM =
			VDRM = VRRM + 100V
			respectively
	Lower voltage grades available.

ORDERING INFORMATION

Order As:

MP04HBT590-18 or MP04HBT-16 or MP04HBT14 MP04HBP590-18 or MP04HBP-16 or MP04HBP14 MP04HBN590-18 or MP04HBN-16 or MP04HBN14

Module type code: MP04.

For further information see Package Details.

Fig. 2 Electrical connections - (not to scale)

Note: When ordering, please use the whole part number.

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MP04---590

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol	Parameter	Test Conditions				Max.	Units
IT(AV)	Mean on-state current	Half wave resistive load			Tcase = 75˚C	595	A
					Tcase = 85˚C	505	A
IT(RMS	RMS value	Tcase = 75˚C				935	A
ITSM	Surge (non-repetitive) on-current	8.3ms half sine, Tj = 125˚C				16.8	kA
I2t	I2t for fusing			VR = 0		1411 X 103	A2s
ITSM	Surge (non-repetitive) on-current	8.3ms half sine, Tj = 125˚C				13.5	kA
I2t	I2t for fusing	V	R	= 50% V		911 X 103	A2s
				DRM
ITSM	Surge (non-repetitive) on-current	10ms half sine, Tj = 125˚C				15.7	kA
I2t	I2t for fusing			VR = 0		1232 X 103	A2s
ITSM	Surge (non-repetitive) on-current	10ms half sine, Tj = 125˚C				12.6	kA
I2t	I2t for fusing	V	R	= 50% V		794 X 103	A2s
				DRM
Visol	Isolation voltage	Commoned terminals to base plate.				3000	V
		AC RMS, 1 min, 50Hz

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MP04---590

THERMAL AND MECHANICAL RATINGS

Symbol	Parameter	Test Conditions	Min.	Max.	Units
Rth(j-c)	Thermal resistance - junction to case	dc	-	0.056	˚C/kW
	(per thyristor or diode)	Half wave	-	0.060	˚C/kW
		3 Phase	-	0.066	˚C/kW
Rth(c-hs)	Thermal resistance - case to heatsink	Mounting torque = 5Nm	-	0.02	˚C/kW
	(per thyristor or diode)	with mounting compound
Tvj	Virtual junction temperature	Reverse (blocking)	-	125	˚C
Tstg	Storage temperature range	-	–40	130	˚C
-	Screw torque	Mounting - M6	-	6 (35)	Nm (lb.ins)
		Electrical connections - M10	-	12 (106)	Nm (lb.ins)
-	Weight (nominal)	-	-	1580	g

DYNAMIC CHARACTERISTICS - THYRISTOR

Symbol	Parameter	Test Conditions	Min.	Max.	Units
IRRM/IDRM	Peak reverse and off-state current	At VRRM/VDRM, Tj = 125˚C	-	50	mA
dV/dt	Linear rate of rise of off-state voltage	To 67% VDRM, Tj = 125˚C	-	1000	V/µ	s
dI/dt	Rate of rise of on-state current	From 67% VDRM to 1500A, gate source 1.5A,	-	500	A/µ	s
		tr = 0.5µ s, Tj = 125˚C
VT(TO)	Threshold voltage	At Tvj = 125˚C. See note 1	-	0.85	V
rT	On-state slope resistance	At Tvj = 125˚C. See note 1	-	0.38	mΩ

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.

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