MP03 XXX 300 Series
MP03 XXX 300 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4482-5.0 |
DS4482-6.0 January 2000 |
FEATURES
■Dual Device Module
■Electrically Isolated Package
■Pressure Contact Construction
■International Standard Footprint
■Alumina (non-toxic) Isolation Medium
APPLICATIONS
■Motor Control
■Controlled Rectifier Bridges
■Heater Control
■AC Phase Control
VOLTAGE RATINGS
Type |
Repetitive |
Conditions |
Number |
Peak |
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Voltages |
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VDRM VRRM |
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MP03/300 - 16 |
1600 |
T(vj) = 125oC |
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MP03/300 - 14 |
1400 |
IDRM = IRRM = 30mA |
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MP03/300 - 12 |
1200 |
VDSM & VRSM = |
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VDRM & VRRM+ 100V |
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MP03/300 - 10 |
1000 |
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respectively |
Lower voltage grades available.
For full description of part number see "Ordering instructions" on page 3.
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KEY PARAMETERS |
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VDRM |
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1600V |
ITSM |
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10600A |
IT(AV) (per arm) |
312A |
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Visol |
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2500V |
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CIRCUIT OPTIONS |
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Code |
Circuit |
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HBT |
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HBP
HBN
PACKAGE OUTLINE
Module type code: MP03.
See Package Details for further information
CURRENT RATINGS - PER ARM
Symbol |
Parameter |
Conditions |
Max. |
Units |
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T |
case |
= 75oC |
312 |
A |
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T |
= 85oC |
265 |
A |
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IT(AV) |
Mean on-state current |
Halfwave, resistive load |
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case |
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T |
heatsink |
= 75oC |
216 |
A |
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T |
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= 85oC |
181 |
A |
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heatsink |
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I |
RMS value |
T |
case |
= 75oC |
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490 |
A |
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T(RMS) |
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1/10
MP03 XXX 300 Series
SURGE RATINGS - PER ARM
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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IFSM |
Surge (non-repetitive) on-state current |
10ms half sine; |
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VR = 0 |
10.6 |
kA |
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Tj |
= 125˚C |
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VR |
= 50% VRRM |
8.5 |
kA |
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10ms half sine; |
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V |
= 0 |
0.56 x 106 |
A2s |
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I2t |
I2t for fusing |
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R |
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Tj |
= 125˚C |
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VR |
= 50% VRRM |
6 |
2 |
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0.36 x 10 |
A s |
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THERMAL & MECHANICAL RATINGS
Symbol |
Parameter |
Conditions |
Max. |
Units |
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dc |
0.11 |
oC/W |
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Thermal resistance - junction to case |
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Rth(j-c) |
halfwave |
0.12 |
o |
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per Thyristor or Diode |
C/W |
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3 phase |
0.13 |
oC/W |
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R |
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Thermal resistance - case to heatsink |
Mounting torque = 5Nm |
0.05 |
oC/W |
th(c-hs) |
per thyristor or diode |
with mounting compound |
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Tvj |
Virtual junction temperature |
Off-state (Blocking) |
125 |
oC |
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T |
stg |
Storage temperature range |
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-40 to 125 |
oC |
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Visol |
Isolation voltage |
Commoned terminals to base plate |
2.5 |
kV |
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AC RMS, 1min, 50Hz |
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DYNAMIC CHARACTERISTICSTHYRISTOR
Symbol |
Parameter |
Conditions |
Max. |
Units |
V |
On-state voltage |
At 1000A, T = 25oC - See Note 1 |
1.50 |
V |
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TM |
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case |
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I |
/I |
Peak reverse and off-state current |
At V |
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/V |
DRM |
, T = 125oC |
30 |
mA |
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RRM |
DRM |
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RRM |
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j |
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dV/dt |
Linear rate of rise of off-state voltage |
To 67% V |
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T = 125oC |
200* |
V/μs |
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DRM j |
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dI/dt |
Rate of rise of on-state current |
From 67% VDRM to 600A |
100 |
A/μs |
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Gate source 10V, 5Ω |
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Rise time 0.5μs, T =125oC |
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j |
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V |
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Threshold voltage |
At T |
vj |
= 125oC - See Note 1 |
0.8 |
V |
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T(TO) |
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rT |
On-state slope resistance |
At Tvj = 125oC - See Note 1 |
0.7 |
mΩ |
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* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
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MP03 XXX 300 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol |
Parameter |
Conditions |
Typ. |
Max. |
Units |
V |
Gate trigger voltage |
V |
DRM |
= 5V, T = 25oC |
- |
3.0 |
V |
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GT |
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case |
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IGT |
Gate trigger current |
VDRM = 5V, Tcase = 25oC |
- |
150 |
mA |
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V |
Gate non-trigger voltage |
At V |
DRM |
T |
case |
= 25oC |
- |
0.25 |
V |
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GD |
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VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
- |
30 |
V |
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VFGN |
Peak forward gate voltage |
Anode negative with respect to cathode |
- |
0.25 |
V |
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VRGM |
Peak reverse gate voltage |
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- |
5.0 |
V |
IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
- |
10 |
A |
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PGM |
Peak gate power |
tp = 25μs |
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- |
100 |
W |
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PG(AV) |
Mean gate power |
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- |
5 |
W |
ORDERING INSTRUCTIONS
Part number is made up of as follows:
|
MP03 HBT 300 -12 |
MP |
= Pressure contact module |
03 |
= Outline type |
HBT |
= Circuit configuration code (see "circuit options" - front page) |
300 |
= Nominal average current rating at Tcase = 75oC |
12 |
= VRRM/100 |
Examples:
MP03 HBP300 - 16 MP03 HBN300 - 10 MP03 HBT300 - 14
NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
■Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation may
be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or
choice of heatsink if required.
■The heatsink surface must be smooth and flat; a surface finish of N6 (32μin) and a flatness within 0.05mm (0.002") are recommended.
■Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery of Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain.
■An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance.
■After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 5Nm (44lb.ins) is reached at both ends.
■It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module.
3/10
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