SGS Thomson Microelectronics KF52BD, KF60BDT, KF60BD, KF55BDT, KF85BDT Datasheet

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KF00

 

SERIES

 

VERY LOW DROP

 

VOLTAGE REGULATORS WITH INHIBIT

VERY LOW DROPOUT VOLTAGE (0.4V)

VERY LOW QUIESCENT CURRENT (TYP. 50 μA IN OFF MODE, 500μA IN ON MODE)

OUTPUT CURRENT UP TO 500 mA

LOGIC-CONTROLLED ELECTRONIC SHUTDOWN

OUTPUT VOLTAGES OF 1.25; 1.5; 2.5; 2.7; 3; 3.3; 3.5; 4; 4.5; 4.7; 5; 5.2; 5.5; 6; 8; 8.5; 12V

INTERNAL CURRENT AND THERMAL LIMIT

ONLY 2.2μF FOR STABILITY

AVAILABLE IN ± 2% ACCURACY AT 25 oC

SUPPLY VOLTAGE REJECTION: 70 db (TYP.)

TEMPERATURE RANGE: -40 TO 125 oC

DESCRIPTION

The KF00 series are very Low Drop regulators available in SO-8 package and in a wide range of output voltages.

The very Low Drop voltage (0.4V) and the very low quiescent current make them particularly suitable for Low Noise, Low Power applications and specially in battery powered systems.

3

1

SO-8

DPAK

A Shutdown Logic Control function is available (pin 5, TTL compatible). This means that when the device is used as a local regulator, it is possible to put a part of the board in standby, decreasing the total power consumption. It requires only a 2.2 μF capacitor for stability allowing space and cost saving.

SCHEMATIC DIAGRAM

June 1998

1/16

KF00

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Uni t

Vi

DC Input Voltage

-0.5 to 20

V

Io

Output Current

Internally limited

 

Pt ot

Power Dissipation

Internally limited

 

Tstg

Storage Temperature Range

- 40 to 150

oC

To p

Operating Junction Temperature Range

- 40 to 125

oC

THERMAL DATA

Symb ol

Parameter

DPAK

SO-8

Unit

Rt hjcase

Thermal Resistance Junction-case

8

20

oC/W

CONNECTION DIAGRAM (top view)

SO-8

DPAK

2/16

 

 

 

KF00

ORDERING NUMBERS

 

 

 

T ype

SO-8

DPAK

Ou tpu t Vo ltage

KF12 (*)

KF12BD

KF12BDT

1.25 V

KF15 (*)

KF15BD

KF15BDT

1.5 V

KF25

KF25BD

KF25BDT

2.5 V

KF27

KF27BD

KF27BDT

2.7 V

KF30

KF30BD

KF30BDT

3 V

KF33

KF33BD

KF33BDT

3.3 V

KF35 (*)

KF35BD

KF35BDT

3.5 V

KF40

KF40BD

KF40BDT

4 V

KF45 (*)

KF45BD

KF45BDT

4.5 V

KF47

KF47BD

KF47BDT

4.75 V

KF50

KF50BD

KF50BDT

5 V

KF52

KF52BD

KF52BDT

5.2 V

KF55 (*)

KF55BD

KF55BDT

5.5 V

KF60

KF60BD

KF60BDT

6 V

KF80

KF80BD

KF80BDT

8 V

KF85

KF85BD

KF85BDT

8.5V

KF120

KF120BD

KF120BDT

12 V

(*) Available on request

TEST CIRCUITS

3/16

SGS Thomson Microelectronics KF52BD, KF60BDT, KF60BD, KF55BDT, KF85BDT Datasheet

KF00

ELECTRICAL CHARACTERISTICS FOR KF12 (refer to the test circuits, Tj = 25 oC, Ci = 0.1 μF, Co = 2.2 μF unless otherwise specified)

Symb ol

Parameter

T est Con ditio ns

Min .

T yp. Max.

Uni t

Vo

Output Voltage

Io = 50 mA, Vi = 3.3 V

1.225

1.25

1.275

V

 

 

Io = 50 mA, Vi = 3.3 V -25<Ta<85 oC

1.2

 

1.3

V

Vi

Operating Input Voltage

Io = 500 mA

 

2.5

 

20

V

Iout

Output Current Limit

 

 

 

 

1

 

A

Vo

Line Regulation

Vi = 2.5 to 20 V,

Io = 5 mA

 

2

12

mV

Vo

Load Regulation

Vi = 2.8 V

 

Io = 5 to 500 mA

 

2

50

mV

Id

Quiescent Current

ON MODE

 

 

 

 

 

 

 

 

Vi = 2.5 to 20 V

Io = 0 mA

 

0.5

1

mA

 

 

Vi = 2.6 to 20 V

Io = 500 mA

 

 

12

mA

 

 

OFF MODE Vi

= 6 V

 

50

100

μA

SVR

Supply Voltage Rejection

Io = 5 mA

Vi = 3.5 V ± 1V

 

82

 

dB

 

 

f = 120 Hz

 

 

 

 

 

 

f = 1 KHz

 

 

 

77

 

dB

 

 

f = 10 KHz

 

 

 

60

 

dB

eN

Output Noise Voltage

B = 10 Hz to 100 KHz

 

50

 

μV

Vd

Dropout Voltage

Io = 200 mA

 

 

1.25

 

V

Vil

Control Input Logic Low

-40 < Ta < 125 oC

 

 

0.8

V

Vih

Control Input Logic High

-40 < Ta < 125 oC

2

 

 

V

Ii

Control Input Current

Vi = 6 V,

Vc = 6 V

 

10

 

μA

CO

Output Bypass Capacitance

ESR = 0.1 to 10 Ω Io = 0 to 500 mA

2

10

 

μF

ELECTRICAL CHARACTERISTICS FOR KF15 (refer to the test circuits, Tj = 25 oC, Ci = 0.1 μF, Co = 2.2 μF unless otherwise specified)

Symb ol

Parameter

T est Con ditio ns

Min .

T yp. Max.

Uni t

Vo

Output Voltage

Io = 50 mA, Vi = 3.5 V

1.47

1.5

1.53

V

 

 

Io = 50 mA, Vi = 3.5 V -25<Ta<85 oC

1.44

 

1.56

V

Vi

Operating Input Voltage

Io = 500 mA

 

2.5

 

20

V

Iout

Output Current Limit

 

 

 

 

1

 

A

Vo

Line Regulation

Vi = 2.5 to 20 V,

Io = 5 mA

 

2

12

mV

Vo

Load Regulation

Vi = 2.8 V

 

Io = 5 to 500 mA

 

2

50

mV

Id

Quiescent Current

ON MODE

 

 

 

 

 

 

 

 

Vi = 2.5 to 20 V

Io = 0 mA

 

0.5

1

mA

 

 

Vi = 2.8 to 20 V

Io = 500 mA

 

 

12

mA

 

 

OFF MODE Vi

= 6 V

 

50

100

μA

SVR

Supply Voltage Rejection

Io = 5 mA

Vi = 3.5 V ± 1V

 

82

 

dB

 

 

f = 120 Hz

 

 

 

 

 

 

f = 1 KHz

 

 

 

77

 

dB

 

 

f = 10 KHz

 

 

 

60

 

dB

eN

Output Noise Voltage

B = 10 Hz to 100 KHz

 

50

 

μV

Vd

Dropout Voltage

Io = 200 mA

 

 

1

 

V

Vil

Control Input Logic Low

-40 < Ta < 125 oC

 

 

0.8

V

Vih

Control Input Logic High

-40 < Ta < 125 oC

2

 

 

V

Ii

Control Input Current

Vi = 6 V,

Vc = 6 V

 

10

 

μA

CO

Output Bypass Capacitance

ESR = 0.1 to 10 Ω Io = 0 to 500 mA

2

10

 

μF

4/16

 

 

 

 

 

 

 

 

KF00

ELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, Tj = 25 oC,

 

 

Ci = 0.1 μF, Co = 2.2 μF unless otherwise specified)

 

 

 

 

Symb ol

Parameter

T est Con ditio ns

Min . T yp.

Max.

Uni t

Vo

Output Voltage

Io = 50 mA, Vi = 4.5 V

2.45

2.5

2.55

V

 

 

Io = 50 mA, Vi = 4.5 V -25<Ta<85 oC

2.4

 

2.6

V

Vi

Operating Input Voltage

Io = 500 mA

 

 

 

20

V

Iout

Output Current Limit

 

 

 

 

1

 

A

Vo

Line Regulation

Vi = 3.5 to 20 V,

Io = 5 mA

 

2

12

mV

Vo

Load Regulation

Vi = 3.8 V

 

Io = 5 to 500 mA

 

2

50

mV

Id

Quiescent Current

ON MODE

 

 

 

 

 

 

 

 

Vi = 3.5 to 20 V

Io = 0 mA

 

0.5

1

mA

 

 

Vi = 3.8 to 20 V

Io = 500 mA

 

 

12

mA

 

 

OFF MODE Vi

= 6 V

 

50

100

μA

SVR

Supply Voltage Rejection

Io = 5 mA

Vi = 4.5 V ± 1V

 

82

 

dB

 

 

f = 120 Hz

 

 

 

 

 

 

f = 1 KHz

 

 

 

77

 

dB

 

 

f = 10 KHz

 

 

 

60

 

dB

eN

Output Noise Voltage

B = 10 Hz to 100 KHz

 

50

 

μV

Vd

Dropout Voltage

Io = 200 mA

 

 

0.2

0.35

V

 

 

Io = 500 mA

 

 

0.4

0.7

V

Vil

Control Input Logic Low

-40 < Ta < 125 oC

 

 

0.8

V

Vih

Control Input Logic High

-40 < Ta < 125 oC

2

 

 

V

Ii

Control Input Current

Vi = 6 V,

Vc = 6 V

 

10

 

μA

CO

Output Bypass Capacitance

ESR = 0.1 to 10 Ω Io = 0 to 500 mA

2

10

 

μF

ELECTRICAL CHARACTERISTICS FOR KF27 (refer to the test circuits, Tj = 25 oC,

 

 

Ci = 0.1 μF, Co = 2.2 μF unless otherwise specified)

 

 

 

 

Symb ol

Parameter

T est Con ditio ns

Min . T yp.

Max.

Uni t

Vo

Output Voltage

Io = 50 mA, Vi = 4.7 V

2.646

2.7

2.754

V

 

 

Io = 50 mA, Vi = 4.7 V -25<Ta<85 oC

2.592

 

2.808

V

Vi

Operating Input Voltage

Io = 500 mA

 

 

 

20

V

Iout

Output Current Limit

 

 

 

 

1

 

A

Vo

Line Regulation

Vi = 3.7 to 20 V,

Io = 5 mA

 

2

12

mV

Vo

Load Regulation

Vi = 4 V

 

Io = 5 to 500 mA

 

2

50

mV

Id

Quiescent Current

ON MODE

 

 

 

 

 

 

 

 

Vi = 3.7 to 20 V

Io = 0 mA

 

0.5

1

mA

 

 

Vi = 4 to 20 V

Io = 500 mA

 

 

12

mA

 

 

OFF MODE Vi

= 6 V

 

50

100

μA

SVR

Supply Voltage Rejection

Io = 5 mA

Vi = 4.7 V ± 1V

 

82

 

dB

 

 

f = 120 Hz

 

 

 

 

 

 

f = 1 KHz

 

 

 

77

 

dB

 

 

f = 10 KHz

 

 

 

60

 

dB

eN

Output Noise Voltage

B = 10 Hz to 100 KHz

 

50

 

μV

Vd

Dropout Voltage

Io = 200 mA

 

 

0.2

0.35

V

 

 

Io = 500 mA

 

 

0.4

0.7

V

Vil

Control Input Logic Low

-40 < Ta < 125 oC

 

 

0.8

V

Vih

Control Input Logic High

-40 < Ta < 125 oC

2

 

 

V

Ii

Control Input Current

Vi = 6 V,

Vc = 6 V

 

10

 

μA

CO

Output Bypass Capacitance

ESR = 0.1 to 10 Ω Io = 0 to 500 mA

2

10

 

μF

5/16

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