SGS Thomson Microelectronics BF259, BF258, BF257 Datasheet

BF257

BF258-BF259

HIGH VOLTAGE VIDEO AMPLIFIERS

DESCRIPTION

The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

	Symbol	Parameter		Value		Unit
			BF 257 BF258 BF25 9
	VCBO	Collector-base Voltage (IE = 0)	160	250	300	V
	VCEO	Collector-emitter Voltage (IB = 0)	160	250	300	V
	VE BO	Emitter-base Voltage (IC = 0)		5		V
	IC	Collector Current		100		mA
	ICM	Collector Peak Current		200		mA
	Pt o t	Total Power Dissipation at Tamb ≤ 50 °C		5		W
	T s t g	Storage Temperature		± 55 to 200		°C
	T j	Junction Temperature		200		°C

October 1988

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BF257-BF258-BF259

THERMAL DATA

Rt h j- cas e	Thermal Resistance Junction-case	Max	30	°C/W
Rt h j-amb	Thermal Resistance Junction-ambient	Max	175	°C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

Symbol

ICB O

V(BR) CB O

V( BR) CEO *

V(BR) EB O

Parameter	Test Conditions		Min.	Typ. Max.	Unit
Collector Cutoff Current	for BF257	VCB = 100 V		50	nA
(I E = 0)	for BF258	VCB = 200 V		50	nA
	for BF259	VCB = 250 V		50	nA
Collector-base	IC = 100 μA	for BF257	160		V
Breakdown Voltage		for BF258	250		V
(I E = 0)		for BF259	300		V
Collector-emitter		for BF257	160		V
Breakdown Voltage	IC = 10 mA	for BF258	250		V
(I B = 0)		for BF259	300		V
Emittter-base	IE = 100 μA
Breakdown Voltage			5		V

(I C = 0)

VCE (s at )* Collector-emitter		IC = 30 mA
	Saturation Voltage
h FE*	DC Current Gain	IC = 30 mA
fT	Transition Frequency	IC = 15 mA
Cr e	Reverse Capacitance	IC = 0
		f = 1 MHz

* Pulsed : pulse duration = 300 μs, duty cycle = 1 %.

IB = 6 mA		1	V
VCE = 10 V	25
VCE = 10 V	90		MHz
VCE = 30 V	3		pF

DC Current Gain.

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