|
BD707/709/711 |
|
BD708/712 |
COMPLEMENTARY SILICON POWER TRANSISTORS
■ COMPLEMENTARY PNP - NPN DEVICES
APPLICATION
■LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
DESCRIPTION
The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.
The BD707 and BD711 complementary PNP types are BD708 and BD712 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
|
Val ue |
|
Un it |
|
NPN |
BD707 |
BD709 |
BD711 |
|
|
PNP |
BD708 |
|
BD712 |
|
VCBO |
Collector-Base Voltage (IE = 0) |
60 |
80 |
100 |
V |
VCER |
Collector-Emitter Voltage (VBE = 0) |
60 |
80 |
100 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
60 |
80 |
100 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
|
5 |
|
V |
IC |
Collector Current |
|
12 |
|
A |
ICM |
Collector Peak Current |
|
18 |
|
A |
IB |
Base Current |
|
5 |
|
A |
Ptot |
Total Dissipation at Tc ≤ 25 oC |
|
75 |
|
W |
Ts tg |
Storage Temperature |
|
-65 to 150 |
|
o C |
Tj |
Max. Operating Junction Temperature |
|
150 |
|
o C |
For PNP types voltage and current values are negative
September 1999 |
1/6 |
BD707/708/709/711/712
THERMAL DATA
Rthj -case |
Thermal |
Resistance |
Junction-case |
Max |
1.67 |
oC/W |
Rthj -case |
Thermal |
Resistance |
Junction-ambient |
Max |
70 |
oC/W |
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
ICBO
ICEO
IEBO
VCEO(s us)
VCE(sat)
VCEK
VBE
hF E
fT
Parameter |
Test Con ditions |
Min. T yp. Max. Unit |
||
Collector Cut-off |
for BD707/708 |
VCB = 60 V |
100 |
μA |
Current (IE = 0) |
for BD709 |
VCB = 80 V |
100 |
μA |
|
for BD711/712 |
VCB = 100 V |
100 |
μA |
|
Tcase = 150 oC |
|
|
|
|
for BD707/708 |
|
for BD709 |
|
for BD711/712 |
Collector Cut-off |
for BD707/708 |
Current (IB = 0) |
for BD709 |
|
for BD711/712 |
Emitter Cut-off Current |
VEB = 5 V |
(IC = 0) |
|
VCB = 60 V |
1 |
mA |
VCB = 80 V |
1 |
mA |
VCB = 100 V |
1 |
mA |
VCE = 30 V |
100 |
mA |
VCE = 40 V |
100 |
mA |
VCE = 50 V |
100 |
mA |
|
1 |
mA |
Collector-Emitter |
IC = 100 mA |
|
|
|
|
|
|
Sustaining Voltage |
for BD707/708 |
|
60 |
|
|
V |
|
(IB = 0) |
for BD709 |
|
80 |
|
|
V |
|
|
for BD711/ 712 |
|
100 |
|
|
V |
|
Collector-Emitter |
IC = 4 |
A |
IB = 0.4 A |
|
|
1 |
V |
Saturation Voltage |
|
|
|
|
|
|
|
Knee Voltage |
IC = 3 |
A |
IB = ** |
|
|
0.4 |
V |
Base-Emitter Voltage |
IC = 4 |
A |
VCE = 4 V |
|
|
1.5 |
V |
DC Current Gain |
IC = 0. |
5 A |
VCE = 2 V |
40 |
120 |
400 |
|
|
IC = 2 A |
VCE = 2 V |
|
|
|
|
|
|
|
|
for BD707/708 |
30 |
|
|
|
|
|
|
for BD709 |
30 |
|
|
|
|
IC = 4 |
A |
VCE = 4 V |
15 |
|
150 |
|
|
IC = 10 A |
VCE = 4 V |
|
|
|
|
|
|
|
|
for BD707/708 |
5 |
10 |
|
|
|
|
|
for BD709 |
|
8 |
|
|
|
|
|
for BD711/ 712 |
|
8 |
|
|
Transition frequency |
IC = 300 mA |
VCE = 3 V |
3 |
|
|
MHz |
|
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
**Value for which IC = 3.3 A at VCE = 2V.
For PNP types voltage and current values are negative.
2/6
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