SGS Thomson Microelectronics BTA40-800B, BTA40-800A, BTA40-700B, BTA40-700A, BTA40-600B Datasheet
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BTA40 A/B
STANDARD TRIACS
.FEATURES
.HIGH SURGE CURRENT CAPABILITY
.COMMUTATION : (dV/dt)c > 10V/μs
BTA Family :
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTA40 A/B triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load.
ABSOLUTE RATINGS (limiting values)
A2
G
A1
RD91
(Plastic)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Parameter |
|
Value |
Unit |
RMS on-state current |
Tc = 75 °C |
40 |
A |
(360° conduction angle) |
|
|
|
Non repetitive surge peak on-state current |
tp = 8.3 ms |
315 |
A |
( Tj initial = 25°C ) |
tp = 10 ms |
300 |
|
|
|
||
I2t value |
tp = 10 ms |
450 |
A2s |
Critical rate of rise of on-state current |
Repetitive |
10 |
A/μs |
Gate supply : IG = 500mA diG/dt = 1A/μs |
F = 50 Hz |
|
|
|
|
|
Non |
|
|
50 |
|
|
|
Repetitive |
|
|
|
|
|
Tstg |
Storage and operating junction temperature range |
|
- |
40 |
to + 150 |
°C |
|
Tj |
|
|
|
- |
40 |
to + 125 |
°C |
Tl |
Maximum lead temperature for soldering during 10 s at |
4.5 mm |
|
|
260 |
°C |
|
|
from case |
|
|
|
|
|
|
Symbol |
Parameter |
|
BTA40-... A/B |
|
|
Unit |
|
|
|
400 |
600 |
700 |
800 |
|
|
VDRM |
Repetitive peak off-state voltage |
400 |
600 |
700 |
800 |
V |
|
VRRM |
Tj = 125 °C |
|
|
|
|
|
|
March 1995 |
1/5 |
BTA40 A/B
THERMAL RESISTANCES
Symbol |
Parameter |
Value |
Unit |
Rth (j-c) DC |
Junction to case for DC |
1.2 |
°C/W |
Rth (j-c) AC |
Junction to case for 360° conduction angle ( F= 50 Hz) |
0.9 |
°C/W |
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 μs) IGM = 8A (tp = 20 μs) VGM = 16V (tp = 20 μs).
ELECTRICAL CHARACTERISTICS
Symbol |
|
|
Test Conditions |
|
Quadrant |
|
Suffix |
Unit |
||
|
|
|
|
|
|
|
|
A |
B |
|
IGT |
|
VD=12V |
|
(DC) RL=33Ω |
Tj=25°C |
I-II-III |
MAX |
100 |
50 |
mA |
|
|
|
|
|
|
IV |
MAX |
150 |
100 |
|
VGT |
|
VD=12V |
|
(DC) RL=33Ω |
Tj=25°C |
I-II-III-IV |
MAX |
|
1.5 |
V |
VGD |
|
VD=VDRM RL=3.3kΩ |
Tj=125°C |
I-II-III-IV |
MIN |
|
0.2 |
V |
||
tgt |
|
VD=VDRM |
IG = 500mA |
Tj=25°C |
I-II-III-IV |
TYP |
|
2.5 |
μs |
|
|
|
dIG/dt = 3A/μs |
|
|
|
|
|
|
||
IL |
|
IG=1.2 IGT |
|
Tj=25°C |
I-III-IV |
TYP |
70 |
60 |
mA |
|
|
|
|
|
|
|
II |
|
200 |
180 |
|
IH * |
|
IT= 500mA |
gate open |
Tj=25°C |
|
MAX |
100 |
80 |
mA |
|
VTM |
* |
ITM= 60A |
tp= 380μs |
Tj=25°C |
|
MAX |
|
1.8 |
V |
|
IDRM |
VDRM |
Rated |
Tj=25°C |
|
MAX |
|
0.01 |
mA |
||
IRRM |
VRRM |
Rated |
Tj=125°C |
|
MAX |
|
6 |
|
||
|
|
|
|
|
|
|
|
|||
dV/dt |
* |
Linear slope up to VD=67%VDRM |
Tj=125°C |
|
MIN |
|
250 |
V/μs |
||
|
|
gate open |
|
|
|
|
|
|
|
|
(dV/dt)c |
* |
(dI/dt)c = 18A/ms |
Tj=125°C |
|
MIN |
|
10 |
V/μs |
||
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
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