SGS Thomson Microelectronics BD682, BD681, BD680A, BD678A, BD678 Datasheet
...
BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
■SGS-THOMSON PREFERRED SALESTYPES
■COMPLEMENTARY PNP - NPN DEVICES
■MONOLITHIC DARLINGTON CONFIGURATION
■INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATION
■LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
DESCRIPTION
The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar and switching applications
The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.= 7K Ω R2 Typ.= 230 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
|
Val ue |
|
Uni t |
|
NPN |
BD677/A |
BD679/A |
BD681 |
|
|
PNP |
BD678/A |
BD680/A |
BD682 |
|
VCBO |
Collector-Base Voltage (IE = 0) |
60 |
80 |
100 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
60 |
80 |
100 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
|
5 |
|
V |
IC |
Collector Current |
|
4 |
|
A |
ICM |
Collector Peak Current |
|
6 |
|
A |
IB |
Base Current |
|
0.1 |
|
A |
Pt ot |
Total Dissipation at Tc ≤ 25 oC |
|
40 |
|
W |
Tstg |
Storage Temperature |
|
-65 to 150 |
|
oC |
Tj |
Max. Operating Junction Temperature |
|
150 |
|
oC |
For PNP types voltage and current values are negative.
September 1997 |
1/6 |
BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
Rt hj-ca se |
Thermal |
Resistance |
Junction-case |
Max |
3.12 |
oC/W |
Rt hjamb |
Thermal |
Resistance |
Junction-ambient |
Max |
100 |
oC/W |
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol |
Parameter |
Test Cond ition s |
|
Mi n. Typ . Max. Un it |
||
ICBO |
Collector Cut-off |
VCE = rated VCBO |
|
0.2 |
mA |
|
Current (IE = 0) |
VCE = rated VCBO TC = 100 oC |
2 |
mA |
|||
ICEO |
Collector Cut-off |
VCE = half rated VCEO |
|
0.5 |
mA |
|
Current (IB = 0) |
|
|
|
|||
|
|
|
|
|
|
|
IEBO |
Emitter Cut-off Current |
VEB = 5 V |
|
|
2 |
mA |
(IC = 0) |
|
|
|
|||
|
|
|
|
|
|
|
|
Collector-Emitter |
IC = 50 mA |
|
|
|
|
VCEO(sus ) |
Sustaining Voltage |
for BD677/677A/678/ 678A |
|
60 |
V |
|
|
|
for BD679/679A/680/ 680A |
|
80 |
V |
|
|
|
for BD681/682 |
|
100 |
V |
|
|
Collector-Emitter |
for BD677/678/ 679/680/681/682 |
|
|
||
VCE(sat ) |
Saturation Voltage |
IC = 1.5 A |
IB = 30 mA |
|
2.5 |
V |
|
for BD677A/ 678A/679A/680A |
|
|
|||
|
|
|
|
|||
|
|
IC = 2 A |
IB = 40 mA |
|
2.8 |
V |
|
Base-Emitter Voltage |
for BD677/678/ 679/680/681/682 |
|
|
||
VBE |
|
IC = 1.5 A |
VCE = 3 V |
|
2.5 |
V |
|
for BD677A/ 678A/679A/680A |
|
|
|||
|
|
|
|
|||
|
|
IC = 2 A |
VCE = 3 V |
|
2.5 |
V |
|
DC Current Gain |
for BD677/678/ 679/680/681/682 |
|
|
||
hFE |
|
IC = 1.5 A |
VCE = 3 V |
|
750 |
|
|
for BD677A/ 678A/679A/680A |
|
|
|||
|
|
|
|
|||
|
|
IC = 2 A |
VCE = 3 V |
|
750 |
|
hf e |
Small Signal Current |
IC = 1.5 A |
VCE = 3 V |
f = 1MHz |
1 |
|
Gain |
|
|
|
|
||
|
|
|
|
|
|
|
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas |
Derating Curve |
2/6
Loading...