SGS Thomson Microelectronics BAT54WFILM, BAT54SWFILM, BAT54JFILM, BAT54AWFILM, BAT54CWFILM Datasheet
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BAT54J / W / AW / CW / SW |
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES 
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP 
SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are available.
ABSOLUTE RATINGS (limiting values)
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NC |
K |
K |
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NC |
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A |
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A |
BAT54W
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K2 |
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A |
A |
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K2 |
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K1 |
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K1 |
BAT54AW
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A2 |
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K2 |
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A2 |
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K |
K |
K1 |
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A2 |
A2 |
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K2 |
K1 |
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A1 |
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A1 |
A1 |
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A1 |
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BAT54CW |
BAT54SW |
SOT-323
A 
86 
K
BAT54J
SOD-323
Symbol |
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Parameter |
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Value |
Unit |
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VRRM |
Repetitive peak reverse voltage |
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30 |
V |
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IF |
Continuous forward current |
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0.3 |
A |
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IFSM |
Surge non repetitive forward current |
tp=10ms sinusoidal |
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1 |
A |
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Ptot |
Power dissipation (note 1) |
SOD-323 |
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230 |
mW |
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Tamb = 25°C |
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SOT-323 |
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Tstg |
Maximum storage temperature range |
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- 65 to +150 |
°C |
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Tj |
Maximum operating junction temperature * |
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150 |
°C |
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TL |
Maximum temperature for soldering during 10s |
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260 |
°C |
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Note 1: for double diodes, Ptot is the total dissipation of both diodes |
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* : dPtot |
< |
1 |
thermal runaway condition for a diode on its own heatsink |
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Rth(j−a) |
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dTj |
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June 1999 - Ed: 2A |
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1/5 |
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BAT54J / W / AW / CW / SW
THERMAL RESISTANCE
Symbol |
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Parameters |
Value |
Unit |
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Rth (j-a) |
Junction to ambient (*) |
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SOD-323 |
550 |
°C/W |
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SOT-323 |
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°C/W |
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(*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol |
Parameters |
Tests conditions |
Min. |
Typ. |
Max. |
Unit |
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VF * |
Forward voltage drop |
Tj = 25°C |
IF = 0.1 mA |
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240 |
mV |
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IF = 1 mA |
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320 |
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IF = 10 mA |
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400 |
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IF = 30 mA |
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500 |
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IF = 100 mA |
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900 |
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IR ** |
Reverse leakage current |
Tj = 25°C |
VR = 30 V |
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1 |
μA |
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Tj = 100°C |
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100 |
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Pulse test : |
* tp = 380 μs, δ < 2% |
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** tp = 5 ms, δ < 2% |
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DYNAMIC CHARACTERISTICS (Tj = 25 °C)
Symbol |
Parameters |
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Tests conditions |
Min. |
Typ. |
Max. |
Unit |
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C |
Junction |
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Tj = 25°C |
VR = 1 V |
F = 1 MHz |
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10 |
pF |
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capacitance |
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trr |
Reverse recovery |
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IF = 10 mA IR = 10 mA |
Tj = 25°C |
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5 |
ns |
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time |
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Irr = 1 mA |
RL = 100 Ω |
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Fig. 1-1: Forward voltage drop |
versus forward |
Fig. 1-2: Forward voltage drop versus forward |
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current (typical values, low level). |
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current (typical values, high level). |
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IFM(A) |
IFM(A) |
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2.00E-2 |
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5E-1 |
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1.80E-2 |
Tj=100°C |
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Tj=100°C |
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1.60E-2 |
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1E-1 |
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1.40E-2 |
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Tj=25°C |
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1.20E-2 |
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Tj=50°C |
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1.00E-2 |
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Tj=50°C |
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8.00E-3 |
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1E-2 |
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6.00E-3 |
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Tj=25°C |
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4.00E-3 |
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2.00E-3 |
VFM(V) |
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VFM(V) |
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0.00E+0 |
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1E-3 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
0.8 |
0.9 |
1.0 |
1.1 |
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 |
0.0 |
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