SGS Thomson Microelectronics BC109C, BC109B, BC108C, BC108B, BC108A Datasheet

BC107

BC108-BC109

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

DESCRIPTION

The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The complementary PNP types are respectively the BC177, BC178 and BC179.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol		Parameter					Value		Unit
						BC107	BC108	BC109
VCBO		Collector-base Voltage (IE = 0)				50	30	30	V
VCEO		Collector-emitter Voltage (IB = 0)				45	20	20	V
VEBO		Emitter-base Voltage (IC = 0)				6	5	5	V
IC		Collector Current					100		mA
P	t o t	Total Power Dissipation	at T amb	≤	25	°	0.3		W
						C
			at Tc as e	≤	25	°	0.75		W
						C
T st g		Storage Temperature					± 55 to 175		°C
T j		Junction Temperature					175		°C

January 1989

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BC107-BC108-BC109

THERMAL DATA

Rt h j- cas e	Thermal Resistance Junction-case	Max	200	°C/W
Rt h j -amb	Thermal Resistance Junction-ambient	Max	500	°C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

Symbol

ICBO

V(B R)CBO

Parameter

Collector Cutoff

Current (IE = 0)

Collector-base

Breakdown Voltage

(IE = 0)

V(BR)CE O * Collector-emitter

Breakdown Voltage

(IB = 0)

V(B R)E BO Emitter-base

Breakdown Voltage

(IC = 0)

VCE( sat )* Collector-emitter Saturation Voltage

VB E * Base-emitter Voltage

VBE( sat )* Base-emitter Saturation Voltage

hF E* DC Current Gain

Test Conditions		Min.	Typ.	Max.	Unit
for BC107
VCB = 40 V				15	nA
VCB = 40 V	°			15	μA
	Tamb = 150 C
for BC108-BC 1 0 9				15	μA
VCB = 20 V
VCB = 20 V	Tamb = 150 °C			15	μA
IC = 10 μA	for BC107	50			V
	for BC108	30			V
	for BC109	30			V
IC = 10 mA	for BC107	45			V
	for BC108	20			V
	for BC109	20			V
IE = 10 μA	for BC107	6			V
	for BC108	5			V
	for BC109	5			V
IC = 10 mA	IB = 0.5 mA		70	250	mV
IC = 100 mA	IB = 5 mA		200	600	mV
IC = 2 mA	VCE = 5 V	550	650	700	mV
IC = 10 mA	VCE = 5 V		700	700	mV
IC = 10 mA	IB = 0.5 mA		750		mV
IC = 100 mA	IB = 5 mA		900		mV
IC = 2 mA	VCE = 5 V	110	230	450
	for BC107
	for BC107 Gr. A	110	180	220
	for BC107 Gr. B	200	290	450
	for BC108	110	350	800
	for BC108 Gr. A	110	180	220
	for BC108 Gr. B	200	290	450
	for BC108 Gr. C	420	520	800
	for BC109	200	350	800
	for BC109 Gr. B	200	290	450
	for BC109 Gr. C	420	520	800
IC = 10 μA	VCE = 5 V
	for BC107		120
	for BC107 Gr. A		90
	for BC107 Gr. B	40	150
	for BC108		120
	for BC108 Gr. A		90
	for BC108 Gr. B	40	150
	for BC108 Gr. C	100	270
	for BC109	40
	for BC109 Gr. B	40	150
	for BC109 Gr. C	100	270

* Pulsed : pulse duration = 300 μs, duty cycle = 1 %.

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BC107-BC108-BC109

ELECTRICAL CHARACTERISTICS (continued)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
hf e	Small Signal	IC = 2 mA	VCE = 5 V
	Current Gain	f = 1 kHz	for BC107
					250
			for BC107 Gr. A		190
			for BC107 Gr. B		300
			for BC108		370
			for BC108 Gr. A		190
			for BC108 Gr. B		300
			for BC108 Gr. C		500
			for BC109		370
			for BC109 Gr. B		300
			for BC109 Gr. C		550
		IC = 10 mA	VCE = 10 V		2
		f = 100 MHz
CCBO	Collector-base	IE = 0	VCB = 10 V		4	6	pF
	Capacitance	f = 1 MHz
CEBO	Emitter-base	IC = 0	VEB = 0.5 V
	Capacitance	f = 1 MHz			12		pF
NF	Noise Figure	IC = 0.2 mA	VCE = 5 V
		Rg = 2 kΩ	f = 1 kHz
		B = 200 Hz
			for BC107		2	10	dB
			for BC108		2	10	dB
			for BC109		1.5	4	dB
		IC = 0.2 mA	VCE = 5 V
		Rg = 2 kΩ
		f = 10 Hz to 10 kHz
		B = 15.7 kHz
			for BC109		1.5	4	dB
hie	Input Impedance	IC = 2 mA	VCE = 5 V
		f = 1 kHz					kΩ
			for BC107		4
			for BC107 Gr. A		3		kΩ
			for BC107 Gr. B		4.8		kΩ
			for BC108		5.5		kΩ
			for BC108 Gr. A		3		kΩ
			for BC108 Gr. B		4.8		kΩ
			for BC108 Gr. C		7		kΩ
			for BC109		5.5		kΩ
			for BC109 Gr. B		4.8		kΩ
			for BC109 Gr. C		7		kΩ

* Pulsed : pulse duration = 300 μs, duty cycle = 1 %.

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