SGS Thomson Microelectronics BTB06-800TW, BTB06-800SW, BTB06-800CW, BTB06-800C, BTB06-800BW Datasheet

®	BTA/BTB06 Series

SNUBBERLESS™, LOGIC LEVEL & STANDARD					6A TRIACS
MAIN FEATURES:					A2
Symbol	Value	Unit
IT(RMS)	6		A		G
					A1
VDRM/VRRM	600 and 800		V		A2
IG (Q )	5 to 50		mA
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DESCRIPTION
Suitable for AC switching operations, the			BTA/	A1	A1
BTB06 series can be used as an ON/OFF function				A2G	A2G
in applications such as static relays, heating
regulation, induction motor starting circuits... or for				TO-220AB Insulated	TO-220AB
phase control in light dimmers, motor			speed	(BTA06)	(BTB06)
controllers,...
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)

ABSOLUTE MAXIMUM RATINGS

	Symbol	Parameter			Value	Unit
	IT(RMS)	RMS on-state current (full sine wave)	TO-220AB	Tc = 110°C	6	A
			TO-220AB Ins.	Tc = 105°C
	ITSM	Non repetitive surge peak on-state	F = 50 Hz	t = 20 ms	60	A
		current (full cycle, Tj initial = 25°C)
			F = 60 Hz	t = 16.7 ms	63
	I²t	I²t Value for fusing	tp = 10 ms		21	A²s
	dI/dt	Critical rate of rise of on-state current	F = 120 Hz	Tj = 125°C	50	A/µs
		IG = 2 x IGT , tr ≤ 100 ns
	IGM	Peak gate current	tp = 20 µs	Tj = 125°C	4	A
	PG(AV)	Average gate power dissipation		Tj = 125°C	1	W
	Tstg	Storage junction temperature range			- 40 to + 150	°C
	Tj	Operating junction temperature range			- 40 to + 125

April 2002 - Ed: 5A

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BTA/BTB06 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)

Symbol	Test Conditions			Quadrant			BTA/BTB06				Unit
						TW	SW		CW	BW
IGT (1)	VD = 12 V	RL = 30 Ω		I - II - III	MAX.	5	10		35	50	mA
VGT				I - II - III	MAX.			1.3			V
VGD	VD = VDRM	RL = 3.3 kΩ		I - II - III	MIN.			0.2			V
	Tj = 125°C
IH (2)	IT = 100 mA				MAX.	10	15		35	50	mA
IL	IG = 1.2 IGT			I - III	MAX.	10	25		50	70	mA
				II		15	30		60	80
dV/dt (2)	VD = 67 %VDRM gate open				MIN.	20	40		400	1000	V/µs
	Tj = 125°C
(dI/dt)c (2)	(dV/dt)c = 0.1 V/µs		Tj = 125°C		MIN.	2.7	3.5		-	-	A/ms
	(dV/dt)c = 10 V/µs		Tj = 125°C			1.2	2.4		-	-
	Without snubber		Tj = 125°C			-	-		3.5	5.3

■ STANDARD (4 Quadrants)

Symbol		Test Conditions		Quadrant		BTA/BTB06			Unit
						C		B
IG (1)		RL = 30 Ω		I - II - III	MAX.	25		50	mA
	VD = 12 V			IV		50		100
VGT				ALL	MAX.	1.3			V
VGD	VD = VDRM	RL = 3.3 kΩ Tj = 125°C		ALL	MIN.	0.2			V
IH (2)	IT = 500 mA				MAX.	25		50	mA
IL	IG = 1.2 IGT			I - III - IV	MAX.	40		50	mA
				II		80		100
dV/dt (2)	VD = 67 %VDRM gate open		Tj = 125°C		MIN.	200		400	V/µs
(dV/dt)c (2)	(dI/dt)c = 2.7 A/ms		Tj = 125°C		MIN.	5		10	V/µs

STATIC CHARACTERISTICS

Symbol			Test Conditions			Value	Unit
VT (2)	ITM = 5.5 A	tp = 380 µs		Tj = 25°C	MAX.	1.55	V
Vto (2)	Threshold voltage			Tj = 125°C	MAX.	0.85	V
Rd (2)	Dynamic resistance			Tj = 125°C	MAX.	60	m Ω
IDRM	VDRM = VRRM			Tj = 25°C	MAX.	5	µA
IRRM				Tj = 125°C		1	mA

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

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