SGS Thomson Microelectronics BTB04-S, BTB04-D, BTB04-A, BTB04-T, BTA04-T Datasheet
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BTA04 T/D/S/A
BTB04 T/D/S/A
SENSITIVE GATE TRIACS
.FEATURES
.VERY LOW IGT = 10mA max
.LOW IH = 15mA max
BTA Family :
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
A1
The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching.
ABSOLUTE RATINGS (limiting values)
A2 G
TO220AB
(Plastic)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
|
Parameter |
|
Value |
Unit |
RMS on-state current |
BTA |
Tc = 90°C |
4 |
A |
(360° conduction angle) |
BTB |
Tc = 95°C |
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Non repetitive surge peak on-state current |
tp = 8.3 ms |
42 |
A |
|
( Tj initial = 25°C ) |
|
tp = 10 ms |
40 |
|
|
|
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||
I2t value |
|
tp = 10 ms |
8 |
A2s |
Critical rate of rise of on-state current |
Repetitive |
10 |
A/μs |
|
Gate supply : IG = 50mA |
diG/dt = 0.1A/μs |
F = 50 Hz |
|
|
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|
Non |
|
50 |
|
|
|
Repetitive |
|
|
|
|
Tstg |
Storage and operating junction temperature range |
- |
40 |
to + 150 |
°C |
|
Tj |
|
|
- |
40 |
to + 110 |
°C |
Tl |
Maximum lead temperature for soldering during 10 s at |
4.5 mm |
|
260 |
°C |
|
|
from case |
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Symbol |
Parameter |
|
BTA / BTB04- |
|
|
Unit |
|
|
400 T/D/S/A |
600 T/D/S/A |
|
700 T/D/S/A |
|
VDRM |
Repetitive peak off-state voltage |
400 |
600 |
|
700 |
V |
VRRM |
Tj = 110°C |
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|
March 1995 |
1/5 |
BTA04 T/D/S/A / |
BTB04 T/D/S/A |
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THERMAL RESISTANCES |
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Symbol |
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|
Parameter |
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Value |
|
Unit |
||
Rth (j-a) |
Junction |
to ambient |
|
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|
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|
60 |
|
°C/W |
|||
Rth (j-c) DC |
Junction to case for DC |
|
|
BTA |
|
|
4.4 |
|
°C/W |
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BTB |
|
|
3.2 |
|
|
Rth (j-c) AC |
Junction to case for 360° conduction angle |
|
BTA |
|
|
3.3 |
|
°C/W |
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( F= 50 Hz) |
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BTB |
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2.4 |
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GATE CHARACTERISTICS (maximum values) |
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PG (AV) = 1W |
PGM = 40W (tp = 20 μs) |
IGM = 4A (tp = 20 μs) |
VGM = 16V (tp = 20 μs). |
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ELECTRICAL CHARACTERISTICS |
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Symbol |
|
|
Test Conditions |
|
Quadrant |
|
|
Suffix |
|
Unit |
|||
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|
T |
D |
S |
A |
|
IGT |
VD=12V |
|
(DC) |
RL=33Ω |
Tj=25°C |
I-II-II I |
MAX |
5 |
5 |
10 |
10 |
mA |
|
|
|
|
|
|
|
|
IV |
MAX |
5 |
10 |
10 |
25 |
|
VGT |
VD=12V |
|
(DC) RL=33Ω |
Tj=25°C |
I-II-III-IV |
MAX |
|
|
1.5 |
|
V |
||
VGD |
VD=VDRM RL=3.3kΩ |
Tj=110°C |
I-II-III-IV |
MIN |
|
|
0.2 |
|
V |
||||
tgt |
|
VD=VDRM |
IG = 40mA |
Tj=25°C |
I-II-III-IV |
TYP |
|
|
2 |
|
μs |
||
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|
dIG/dt = 0.5A/μs |
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IL |
|
IG= 1.2 IGT |
|
Tj=25°C |
I-III-IV |
TYP |
10 |
10 |
20 |
20 |
mA |
||
|
|
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|
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|
II |
|
20 |
20 |
40 |
40 |
|
IH |
* |
IT= 100mA |
gate open |
Tj=25°C |
|
MAX |
15 |
15 |
25 |
25 |
mA |
||
VTM |
* |
ITM= 5.5A |
tp= 380μs |
Tj=25°C |
|
MAX |
|
|
1.65 |
|
V |
||
IDRM |
VDRM |
Rated |
|
Tj=25°C |
|
MAX |
|
|
0.01 |
|
mA |
||
IRRM |
VRRM |
Rated |
|
Tj=110°C |
|
MAX |
|
|
0.75 |
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dV/dt |
* |
Linear |
slope |
up to |
Tj=110°C |
|
TYP |
10 |
10 |
- |
- |
V/μs |
|
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|
VD=67%VDRM |
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|
MIN |
- |
- |
10 |
10 |
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gate open |
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(dV/dt)c * |
(dI/dt)c = 1.8A/ms |
|
Tj=110°C |
|
TYP |
1 |
1 |
5 |
5 |
V/μs |
|||
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
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