SGS Thomson Microelectronics BZW50-82B, BZW50-47, BZW50-39B, BZW50-39, BZW50-33B Datasheet

®	BZW50-10,B/180,B

TRANSILTM

FEATURES

■PEAK PULSE POWER : 5000 W (10/1000μs)

■STAND-OFF VOLTAGE RANGE :

From 10V to 180V

■UNI AND BIDIRECTIONAL TYPES

■LOW CLAMPING FACTOR

■FAST RESPONSE TIME

■UL RECOGNIZED

DESCRIPTION
Transil diodes provide high overvoltage protection	R6
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-

plied IC’s.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol	Parameter		Value	Unit
PPP	Peak pulse power dissipation (see note 1)	Tj initial = Tamb	5000	W
P	Power dissipation on infinite heatsink	Tamb = 75°C	6.5	W
IFSM	Non repetitive surge peak forward current	tp = 10ms	500	A
	for unidirectional types	Tj initial = Tamb
Tstg	Storage temperature range		- 65 to + 175	°C
Tj	Maximum junction temperature		175	°C
TL	Maximum lead temperature for soldering during 10s at 5mm		230	°C
	from case

Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.

THERMAL RESISTANCES

Symbol	Parameter	Value	Unit
Rth (j-l)	Junction to leads	15	°C/W
Rth (j-a)	Junction to ambient on printed circuit. Llead = 10 mm	65	°C/W

February 2003Ed : 4A

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BZW50-10,B/180,B

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)															I
Symbol			Parameter												IF
VRM		Stand-off voltage
											VCL		VBR
VBR		Breakdown voltage
													VRM				V F
VCL		Clamping voltage																		V
																I RM
IRM		Leakage current @ VRM
IPP		Peak pulse current
αT		Voltage temperature coefficient
																I PP
VF		Forward voltage drop
Types				IRM @ VRM			VBR	@ IR			VCL @ IPP				VCL @ IPP			αT		C
				max			min				max				max			max		typ
							note2				10/1000μs				8/20μs			note3		note4
Unidirectional			Bidirectional	μA		V	V			mA	V		A		V		A	10-4/ °C		pF
BZW50-10			BZW50-10B	5		10	11.1		1		18.8		266		23.4		2564	7.8		24000
BZW50-12			BZW50-12B	5		12	13.3		1		22		227		28		2143	8.4		18500
BZW50-15			BZW50-15B	5		15	16.6		1		26.9		186		35		1714	8.8		13500
BZW50-18			BZW50-18B	5		18	20		1		32.2		155		41.5		1446	9.2		11500
BZW50-22			BZW50-22B	5		22	24.4		1		39.4		127		51		1177	9.6		8500
BZW50-27			BZW50-27B	5		27	30		1		48.3		103		62		968	9.8		7000
BZW50-33			BZW50-33B	5		33	36.6		1		59		85		76		789	10		5750
BZW50-39			BZW50-39B	5		39	43.3		1		69.4		72		90		667	10.1		4800
BZW50-47			BZW50-47B	5		47	52		1		83.2		60.1		108		556	10.3		4100
BZW50-56			BZW50-56B	5		56	62.2		1		99.6		50		129		465	10.4		3400
BZW50-68			BZW50-68B	5		68	75.6		1		121		41		157		382	10.5		3000
BZW50-82			BZW50-82B	5		82	91		1		145		34		189		317	10.6		2600
BZW50-100			BZW50-100B	5		100	111		1		179		28		228		263	10.7		2300
BZW50-120			BZW50-120B	5		120	133		1		215		23		274		219	10.8		1900
BZW50-150			BZW50-150B	5		150	166		1		269		19		343		175	10.8		1700
BZW50-180			BZW50-180B	5		180	200		1		322		16		410		146	10.8		1500

	% I PP
100		10 s

PULSE WAVEFORM 10/1000s

50

0 t

1000s

Note 2 : Pulse test: tp < 50 ms.

Note 3 : VBR = αT * (Tamb - 25) * VBR(25°C)

Note 4 : VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2.

Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board).

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