SGS Thomson Microelectronics BTB10-800CW, BTB10-800C, BTB10-800BW, BTB10-600CW, BTB10-600C Datasheet

®	BTA/BTB10 Series

	SNUBBERLESS™ & STANDARD								10A TRIACS
	MAIN FEATURES:								A2
	Symbol				Value		Unit
	IT(RMS)				10		A		G
									A1
	VDRM/VRRM				600 and 800		V		A2
	IGT (Q		)		25 to 50		mA
		1
	DESCRIPTION
	Available	either		in	standard	or	snubberless	A1	A1
								A2
	version, the BTA/BTB10 triac series is suitable for							G	A2
									G
								TO-220AB Insulated
	general purpose AC switching. They can be used								TO-220AB
	as an ON/OFF function in applications such as							(BTA10)	(BTB10)
	static relays, heating regulation, induction motor
	starting circuits... or for phase control operation in
	light dimmers, motor speed controllers, ...
	The snubberless version (W suffix) is specially
	recommended for use on inductive loads, thanks
	to their high commutation performances.
	By using an internal ceramic pad, the BTA series
	provides voltage insulated tab (rated at 2500 V
	RMS) complying with UL standards (File ref.:
	E81734).

ABSOLUTE MAXIMUM RATINGS

	Symbol	Parameter			Value	Unit
	IT(RMS)	RMS on-state current	TO-220AB	Tc = 105°C	10	A
		(full sine wave)
			TO-220AB Ins.	Tc = 95°C
	ITSM	Non repetitive surge peak on-state	F = 60 Hz	t = 16.7 ms	105	A
		current (full cycle, Tj initial = 25°C)
			F = 50 Hz	t = 20 ms	100
	I²t	I²t Value for fusing	tp = 10 ms		55	A²s
	dI/dt	Critical rate of rise of on-state current	F = 120 Hz	Tj = 125°C	50	A/µs
		IG = 2 x IGT , tr ≤ 100 ns
V	/V	Non repetitive surge peak off-state	tp = 10 ms	Tj = 25°C	VDRM/VRRM	V
	DSM RSM	voltage			+ 100
	IGM	Peak gate current	tp = 20 µs	Tj = 125°C	4	A
	PG(AV)	Average gate power dissipation		Tj = 125°C	1	W
	Tstg	Storage junction temperature range			- 40 to + 150	°C
	Tj	Operating junction temperature range			- 40 to + 125
April 2002 - Ed: 5A						1/6

BTA/BTB10 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

■ SNUBBERLESS™ (3 Quadrants)

Symbol		Test Conditions		Quadrant		BTA/BTB10			Unit
						CW		BW
IGT (1)	VD = 12 V	RL = 33 Ω		I - II - III	MAX.	35		50	mA
VGT				I - II - III	MAX.	1.3			V
VGD	VD = VDRM	RL = 3.3 kΩ	Tj = 125°C	I - II - III	MIN.	0.2			V
IH (2)	IT = 500 mA				MAX.	35		50	mA
IL	IG = 1.2 IGT			I - III	MAX.	50		70	mA
				II		60		80
dV/dt (2)	VD = 67 % VDRM gate open		Tj = 125°C		MIN.	500		1000	V/µs
(dI/dt)c (2)	Without snubber		Tj = 125°C		MIN.	5.5		9.0	A/ms

■ STANDARD (4 Quadrants)

Symbol		Test Conditions		Quadrant		BTA/BTB10			Unit
						C		B
IGT (1)				I - II - III	MAX.	25		50	mA
	VD = 12 V	RL = 33 Ω		IV		50		100
VGT				ALL	MAX.	1.3			V
VGD	VD = VDRM	RL = 3.3 kΩ Tj = 125°C		ALL	MIN.	0.2			V
IH (2)	IT = 500 mA				MAX.	25		50	mA
IL	IG = 1.2 IGT			I - III - IV	MAX.	40		50	mA
				II		80		100
dV/dt (2)	VD = 67 %VDRM gate open		Tj = 125°C		MIN.	200		400	V/µs
(dV/dt)c (2)	(dI/dt)c = 4.4 A/ms		Tj = 125°C		MIN.	5		10	V/µs

STATIC CHARACTERISTICS

Symbol			Test Conditions			Value	Unit
VTM (2)	ITM = 14 A	tp = 380 µs		Tj = 25°C	MAX.	1.55	V
Vto (2)	Threshold voltage			Tj = 125°C	MAX.	0.85	V
Rd (2)	Dynamic resistance			Tj = 125°C	MAX.	40	m Ω
IDRM	VDRM = VRRM			Tj = 25°C	MAX.	5	µA
IRRM				Tj = 125°C		1	mA

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

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