SGS Thomson Microelectronics BTB08-800TWRG, BTB08-800SWRG, BTB08-800SW, BTB08-800CWRG, BTB08-800CW Datasheet

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SGS Thomson Microelectronics BTB08-800TWRG, BTB08-800SWRG, BTB08-800SW, BTB08-800CWRG, BTB08-800CW Datasheet

®

BTA/BTB08 and T8 Series

SNUBBERLESS™, LOGIC LEVEL & STANDARD

 

 

8A TRIACS

MAIN FEATURES:

 

 

 

 

A2

 

Symbol

Value

Unit

 

A2

 

A2

 

 

 

 

IT(RMS)

8

A

 

G

A1

 

A1

A2

A2

 

 

 

 

A1

 

 

 

 

 

G

G

VDRM/VRRM

600 and 800

V

 

 

 

DPAK

 

D2PAK

IGT (Q

)

5 to 50

mA

 

(T8-B)

 

(T8-G)

 

 

 

 

1

 

 

 

 

 

A2

 

 

 

 

 

 

 

 

DESCRIPTION

 

 

 

 

 

 

Available either in through-hole or surface-mount

 

 

 

 

packages, the BTA/BTB08 and T8 triac series is

 

A1

 

 

suitable for general purpose AC switching. They

 

A2

IPAK

 

 

G

 

can be used as an ON/OFF function in

 

 

(T8-H)

 

applications such as static relays, heating

 

 

 

 

regulation, induction motor starting circuits... or for

 

 

 

A2

phase control operation in light dimmers, motor

 

 

 

 

speed controllers,...

 

 

 

 

 

 

The snubberless versions (BTA/BTB...W and T8

 

 

 

 

series) are specially recommended for use on

 

 

 

 

inductive loads, thanks to their high commutation

A1

 

A1

 

performances. By using an internal ceramic pad,

 

 

A2

 

A2G

 

the BTA series provides voltage insulated tab

G

 

(rated at 2500V RMS) complying with UL

TO-220AB Insulated

TO-220AB

standards (File ref.: E81734)

 

 

(BTA08)

(BTB08)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

 

Value

Unit

 

 

 

 

 

 

IT(RMS)

RMS on-state current (full sine wave)

DPAK / D²PAK

Tc = 110°C

 

 

 

 

IPAK / TO-220AB

8

A

 

 

 

 

 

 

 

 

 

 

 

TO-220AB Ins.

Tc = 100°C

 

 

 

 

 

 

 

 

ITSM

Non repetitive surge peak on-state

F = 50 Hz

t = 20 ms

80

A

 

current (full cycle, Tj initial = 25°C)

 

 

 

 

 

F = 60 Hz

t = 16.7 ms

84

 

 

 

 

 

 

 

 

 

 

I²t

I²t Value for fusing

tp = 10 ms

36

A²s

dI/dt

Critical rate of rise of on-state current

F = 120 Hz

Tj = 125°C

50

A/µs

IG = 2 x IGT , tr 100 ns

 

 

 

 

 

IGM

Peak gate current

tp = 20 µs

Tj = 125°C

4

A

PG(AV)

Average gate power dissipation

 

Tj = 125°C

1

W

Tstg

Storage junction temperature range

 

 

- 40 to + 150

°C

Tj

Operating junction temperature range

 

 

- 40 to + 125

 

 

 

April 2002 - Ed: 5A

 

 

 

1/10

 

 

 

 

 

 

BTA/BTB08 and T8 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)

Symbol

Test Conditions

Quadrant

 

 

T8

 

 

BTA/BTB08

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T810

 

T835

TW

 

SW

CW

BW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IGT (1)

VD = 12 V

RL = 30 Ω

I - II - III

MAX.

10

 

35

5

 

10

35

50

mA

VGT

I - II - III

MAX.

 

 

 

 

1.3

 

 

V

 

 

 

 

 

 

 

 

 

VGD

VD = VDRM

RL = 3.3 kΩ

I - II - III

MIN.

 

 

 

 

0.2

 

 

V

 

Tj = 125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IH (2)

IT = 100 mA

 

 

 

MAX.

15

 

35

10

 

15

35

50

mA

IL

IG = 1.2 IGT

 

 

I - III

MAX.

25

 

50

10

 

25

50

70

mA

 

 

 

 

II

 

30

 

60

15

 

30

60

80

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dV/dt (2)

VD = 67 %VDRM gate open

MIN.

40

 

400

20

 

40

400

1000

V/µs

 

Tj = 125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(dI/dt)c (2)

(dV/dt)c = 0.1 V/µs

Tj = 125°C

MIN.

5.4

 

-

3.5

 

5.4

-

-

A/ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(dV/dt)c = 10 V/µs

Tj = 125°C

 

2.8

 

-

1.5

 

2.8

-

-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Without snubber

Tj = 125°C

 

-

 

4.5

-

 

-

4.5

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

STANDARD (4 Quadrants)

Symbol

 

Test Conditions

 

Quadrant

 

BTA/BTB08

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

B

 

 

 

 

 

 

 

 

 

 

 

IGT (1)

 

RL = 30 Ω

 

I - II - III

MAX.

25

 

50

mA

 

VD = 12 V

 

IV

 

50

 

100

 

VGT

 

 

 

ALL

MAX.

1.3

 

V

VGD

VD = VDRM

RL = 3.3 kΩ Tj = 125°C

ALL

MIN.

0.2

 

V

IH (2)

IT = 500 mA

 

 

 

MAX.

25

 

50

mA

IL

IG = 1.2 IGT

 

 

I - III - IV

MAX.

40

 

50

mA

 

 

 

 

II

 

80

 

100

 

 

 

 

 

 

 

 

 

 

dV/dt (2)

VD = 67 %VDRM gate open

Tj = 125°C

 

MIN.

200

 

400

V/µs

(dV/dt)c (2)

(dI/dt)c = 3.5 A/ms

Tj = 125°C

 

MIN.

5

 

10

V/µs

 

 

 

 

 

 

 

 

 

 

STATIC CHARACTERISTICS

Symbol

 

 

Test Conditions

 

Value

Unit

 

 

 

 

 

 

 

 

VTM (2)

ITM = 11 A

tp = 380 µs

 

Tj = 25°C

MAX.

1.55

V

Vto (2)

Threshold voltage

 

Tj = 125°C

MAX.

0.85

V

Rd (2)

Dynamic resistance

 

Tj = 125°C

MAX.

50

m Ω

IDRM

VDRM = VRRM

 

 

Tj = 25°C

MAX.

5

µA

IRRM

 

 

 

Tj = 125°C

1

mA

 

 

 

 

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

2/10

BTA/BTB08 and T8 Series

THERMAL RESISTANCES

Symbol

 

Parameter

 

Value

Unit

 

 

 

 

 

 

 

Rth(j-c)

Junction to case (AC)

 

 

DPAK / D²PAK

1.6

°C/W

 

 

 

 

IPAK / TO-220AB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TO-220AB Insulated

2.5

 

 

 

 

 

 

 

 

Rth(j-a)

Junction to ambient

 

S = 1 cm²

D²PAK

45

°C/W

 

 

 

S = 0.5 cm²

DPAK

70

 

 

 

 

 

TO-220AB

60

 

 

 

 

 

TO-220AB Insulated

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IPAK

100

 

 

 

 

 

 

 

 

S = Copper surface under tab

 

 

 

 

 

PRODUCT SELECTOR

 

 

 

 

 

Part Number

Voltage (xxx)

Sensitivity

Type

Package

 

 

 

600 V

800 V

 

 

 

 

 

 

 

 

 

BTA/BTB08-xxxB

X

X

50 mA

Standard

TO-220AB

 

 

 

 

 

 

BTA/BTB108-xxxBW

X

X

50 mA

Snubberless

TO-220AB

 

 

 

 

 

 

BTA/BTB08-xxxC

X

X

25 mA

Standard

TO-220AB

 

 

 

 

 

 

BTA/BTB08-xxxCW

X

X

35 mA

Snubberless

TO-220AB

 

 

 

 

 

 

BTA/BTB08-xxxSW

X

X

10 mA

Logic level

TO-220AB

 

 

 

 

 

 

BTA/BTB08-xxxTW

X

X

5 mA

Logic level

TO-220AB

 

 

 

 

 

 

T810-xxxB

X

X

10 mA

Logic level

DPAK

 

 

 

 

 

 

T810-xxxH

X

X

10 mA

Logic level

IPAK

 

 

 

 

 

 

T835-xxxB

X

X

35mA

Snubberless

DPAK

 

 

 

 

 

 

T835-xxxG

X

X

35 mA

Snubberless

D²PAK

T835-xxxH

X

X

35 mA

Snubberless

IPAK

 

 

 

 

 

 

BTB: non insulated TO-220AB package

3/10

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