SGS Thomson Microelectronics BU508AFI, BU508A, BU208A Datasheet

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BU208A

 

BU508A/BU508AFI

 

HIGH VOLTAGE FAST-SWITCHING

 

NPN POWER TRANSISTORS

STMicroelectronics PREFERRED SALESTYPES

HIGH VOLTAGE CAPABILITY

U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)

JEDEC TO-3 METAL CASE.

APPLICATIONS:

HORIZONTAL DEFLECTION FOR COLOUR TV

DESCRIPTION

The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCES

Collector-Emitter Voltage (VBE = 0)

VCEO

Collector-Emitter Voltage (IB = 0)

VEBO

Emitter-Base Voltage (IC = 0)

IC

Collector Current

ICM

Collector Peak Current (tp < 5 ms)

Pt ot

Total Dissipation at Tc = 25 oC

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

TO-3

1

2

 

3

3

 

2

2

TO-218

1

ISOWATT218 1

INTERNAL SCHEMATIC DIAGRAM

For TO-3 :

C = Tab

E = Pin2.

 

Value

 

Unit

 

1500

 

V

 

700

 

V

 

10

 

V

 

8

 

A

 

15

 

A

TO - 3 TO - 218

I SOW AT T218

 

150

125

50

W

-65 to 175

-65 to 150

-65 to 150

oC

175

150

150

oC

November 1999

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BU208A / BU508A / BU508AFI

THERMAL DATA

 

 

T O-3

TO -218

ISO WATT218

 

Rt hj-ca se Thermal Resistance Junction-case

Max

1

1

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol

ICES

IEBO

VCEO(sus )

VEBO

Parameter

Collector Cut-off

Current (VBE = 0)

Emitter Cut-off Current

(IC = 0)

Collector-Emitter

Sustaining Voltage

(IB = 0)

Test Cond ition s

Mi n. Typ . Max.

Un it

VCE = 1500 V

TC = 125 oC

1

mA

VCE = 1500 V

 

2

mA

VEB = 5 V

 

100

μA

IC = 100 mA

 

700

V

Emitter Base Voltage IE = 10 mA

10

V

(IC = 0)

 

 

VCE(sat ) Collector-Emitter

IC = 4.5 A

 

IB = 2 A

 

1

V

 

Saturation Voltage

 

 

 

 

 

 

VBE(s at) Base-Emitt er

IC = 4.5 A

 

IB = 2 A

 

1.3

V

 

Saturation Voltage

 

 

 

 

 

 

 

INDUCTIVE LOAD

IC = 4.5 A

hF E = 2.5

VCC = 140 V

 

 

μs

ts

Storage Time

LC = 0.9 mH

LB = 3 μH

7

 

tf

Fall Time

 

 

 

0.55

 

μs

fT

Transition Frequency

IC = 0.1 A

VCE = 5 V

f = 5 MHz

7

 

MHz

Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %

Safe Operating Area (TO-3)

Safe Operating Areas (TO-218/ISOWATT218)

2/8

SGS Thomson Microelectronics BU508AFI, BU508A, BU208A Datasheet

BU208A / BU508A / BU508AFI

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Switching Time Inductive Load

Switching Time Inductive Load (see figure 1)

3/8

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